SI3590DV-T1-E3

{
  "slug": "si3590dv-t1-e3",
  "version": "0.1.0",
  "type": "component",
  "description": "Vishay Intertech MOSFETs, TSOP-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "tags": [
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  "dependencies": {},
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    "si3590dv-t1-e3.lbr",
    "docs/hero.png",
    "docs/si3590dv-t1-e3-datasheet.pdf",
    "viewers/symbol.html",
    "viewers/footprint.html",
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    "si3590dv-t1-e3-hero.overlay.json",
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  "component": {
    "mpn": "SI3590DV-T1-E3",
    "manufacturer": "Vishay Intertech",
    "package": "TSOP-6",
    "pin_count": 6,
    "category": "Transistors",
    "subcategory": "MOSFETs",
    "datasheet": "https://datasheet.lcsc.com/datasheet/pdf/31947936c16503ed4061c1568914349f.pdf",
    "parts": {
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      "lbr": "si3590dv-t1-e3.lbr"
    },
    "distributor_links": {
      "lcsc": "C727597",
      "digikey": "SI3590DV-T1-E3TR-ND",
      "mouser": "781-SI3590DV-T1-E3"
    },
    "distributor_check": {
      "checked_at": "2026-10-27T00:45:23Z",
      "source": "Component Ocean /api/assign-pns",
      "digikey": {
        "pn": "SI3590DV-T1-E3TR-ND",
        "status": "found",
        "lifecycle": "Obsolete"
      },
      "mouser": {
        "pn": "781-SI3590DV-T1-E3",
        "status": "found",
        "lifecycle": "End of Life"
      }
    },
    "pins": [
      {
        "number": "1",
        "name": "G1",
        "type": "input",
        "description": "Gate of the N-channel MOSFET, with VGS rated ±12 V maximum and threshold of 0.6 V to 1.5 V at 250 µA."
      },
      {
        "number": "2",
        "name": "S2",
        "type": "passive",
        "description": "Source of the P-channel MOSFET, rated VDS -30 V with continuous drain current of -2 A (10 s) at TA = 25 °C."
      },
      {
        "number": "3",
        "name": "G2",
        "type": "input",
        "description": "Gate of the P-channel MOSFET, with VGS rated ±12 V maximum and threshold of -0.6 V to -1.5 V at -250 µA."
      },
      {
        "number": "4",
        "name": "D2",
        "type": "passive",
        "description": "Drain of the P-channel MOSFET, rated VDS -30 V with pulsed drain current IDM of -8 A."
      },
      {
        "number": "5",
        "name": "S1",
        "type": "passive",
        "description": "Source of the N-channel MOSFET, rated VDS 30 V with continuous drain current of 3 A (10 s) at TA = 25 °C."
      },
      {
        "number": "6",
        "name": "D1",
        "type": "passive",
        "description": "Drain of the N-channel MOSFET, rated VDS 30 V with pulsed drain current IDM of 8 A."
      }
    ],
    "provenance": {
      "extractor": "extract_pins 0.3",
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        "cost_usd": 0.1188,
        "at": "2026-10-27T00:44:54"
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        "source_tier": "mfr"
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      "pins": {
        "total": 6,
        "described": 6,
        "cites_pages": true,
        "refuses_to_fabricate": true
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}