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SI3590DV-T1-E3

Public Made by Adom

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Vishay Intertech MOSFETs, TSOP-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SI3590DV-T1-E3

Vishay Intertech · MOSFETs · TSOP-6

SI3590DV-T1-E3 from Vishay Intertech, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G1 input Gate of the N-channel MOSFET, with VGS rated ±12 V maximum and threshold of 0.6 V to 1.5 V at 250 µA.
2 S2 passive Source of the P-channel MOSFET, rated VDS -30 V with continuous drain current of -2 A (10 s) at TA = 25 °C.
3 G2 input Gate of the P-channel MOSFET, with VGS rated ±12 V maximum and threshold of -0.6 V to -1.5 V at -250 µA.
4 D2 passive Drain of the P-channel MOSFET, rated VDS -30 V with pulsed drain current IDM of -8 A.
5 S1 passive Source of the N-channel MOSFET, rated VDS 30 V with continuous drain current of 3 A (10 s) at TA = 25 °C.
6 D1 passive Drain of the N-channel MOSFET, rated VDS 30 V with pulsed drain current IDM of 8 A.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package TSOP-6
Category Transistors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate threshold voltage N-Ch VGS(th) 0.6 1.5 V VDS = VGS, ID = 250 μA 2
Gate threshold voltage P-Ch VGS(th) -0.6 -1.5 V VDS = VGS, ID = -250 μA 2
Gate-body leakage N-Ch IGSS 100 nA VDS = 0 V, VGS = ± 12 V 2
Gate-body leakage P-Ch IGSS 100 nA VDS = 0 V, VGS = ± 12 V 2
Zero gate voltage drain current N-Ch IDSS 1 μA VDS = 30 V, VGS = 0 V 2
Zero gate voltage drain current P-Ch IDSS -1 μA VDS = -30 V, VGS = 0 V 2
Zero gate voltage drain current N-Ch hot IDSS 5 μA VDS = 30 V, VGS = 0 V, TJ = 55 °C 2
Zero gate voltage drain current P-Ch hot IDSS -5 μA VDS = -30 V, VGS = 0 V, TJ = 55 °C 2
On-state drain current N-Ch ID(on) 5 A VDS ≥ 5 V, VGS = 4.5 V 2
On-state drain current P-Ch ID(on) -5 A VDS ≤ -5 V, VGS = -4.5 V 2
Drain-source on-state resistance N-Ch RDS(on) 0.062 0.077 Ω VGS = 4.5 V, ID = 3 A 2
Drain-source on-state resistance P-Ch RDS(on) 0.135 0.17 Ω VGS = -4.5 V, ID = -2 A 2
Drain-source on-state resistance N-Ch RDS(on) 0.095 0.12 Ω VGS = 2.5 V, ID = 2 A 2
Drain-source on-state resistance P-Ch RDS(on) 0.235 0.3 Ω VGS = -2.5 V, ID = -1.2 A 2
Diode forward voltage N-Ch VSD 0.8 1.1 V IS = 1.05 A, VGS = 0 V 2
Diode forward voltage P-Ch VSD -0.83 -1.1 V IS = -1.05 A, VGS = 0 V 2
Total gate charge N-Ch Qg 3 4.5 nC VDS = 15 V, VGS = 4.5 V, ID = 2 A 2
Total gate charge P-Ch Qg 3.8 6 nC VDS = -15 V, VGS = -4.5 V, ID = -2 A 2
Turn-on delay time N-Ch td(on) 5 8 ns VDD = 15 V, RL = 15 Ω, VGEN = 10 V, Rg = 6 Ω 2
Turn-on delay time P-Ch td(on) 5 8 ns VDD = -15 V, RL = 15 Ω, VGEN = -10 V, Rg = 6 Ω 2
Rise time N-Ch tr 12 23 ns VDD = 15 V, RL = 15 Ω, VGEN = 10 V, Rg = 6 Ω 2
Rise time P-Ch tr 15 23 ns VDD = -15 V, RL = 15 Ω, VGEN = -10 V, Rg = 6 Ω 2
Turn-off delay time N-Ch td(off) 13 23 ns VDD = 15 V, RL = 15 Ω, VGEN = 10 V, Rg = 6 Ω 2
Turn-off delay time P-Ch td(off) 20 30 ns VDD = -15 V, RL = 15 Ω, VGEN = -10 V, Rg = 6 Ω 2
Fall time N-Ch tf 7 12 ns VDD = 15 V, RL = 15 Ω, VGEN = 10 V, Rg = 6 Ω 2
Fall time P-Ch tf 20 30 ns VDD = -15 V, RL = 15 Ω, VGEN = -10 V, Rg = 6 Ω 2
Reverse recovery time N-Ch trr 15 25 ns IF = 1.05 A, di/dt = 100 A/μs 2
Reverse recovery time P-Ch trr 18 30 ns IF = -1.05 A, di/dt = 100 A/μs 2
Drain-source voltage N-Ch VDS 30 V TA = 25 °C 1
Drain-source voltage P-Ch VDS -30 V TA = 25 °C 1
Gate-source voltage VGS -12 12 V TA = 25 °C, both channels 1
Continuous drain current N-Ch 10 s ID 3 A TJ = 150 °C, TA = 25 °C, 10 s 1
Continuous drain current N-Ch steady state ID 2.5 A TJ = 150 °C, TA = 25 °C, steady state 1
Continuous drain current P-Ch 10 s ID -2 A TJ = 150 °C, TA = 25 °C, 10 s 1
Continuous drain current P-Ch steady state ID -1.7 A TJ = 150 °C, TA = 25 °C, steady state 1
Pulsed drain current N-Ch IDM 8 A 1
Pulsed drain current P-Ch IDM -8 A 1
Continuous source current N-Ch 10 s IS 1.05 A diode conduction, 10 s 1
Continuous source current N-Ch steady state IS 0.75 A diode conduction, steady state 1
Continuous source current P-Ch 10 s IS -1.05 A diode conduction, 10 s 1
Continuous source current P-Ch steady state IS -0.75 A diode conduction, steady state 1
Maximum power dissipation 10 s PD 1.15 W TA = 25 °C, 10 s, each channel 1
Maximum power dissipation steady state PD 0.83 W TA = 25 °C, steady state, each channel 1
Operating junction and storage temperature range TJ, Tstg -55 150 °C 1
Junction-to-ambient thermal resistance 10 s RthJA 93 110 °C/W t ≤ 10 s, N- and P-channel 1
Junction-to-ambient thermal resistance steady state RthJA 130 150 °C/W Steady state, N- and P-channel 1
Junction-to-foot thermal resistance RthJF 75 90 °C/W Steady state (drain), N- and P-channel 1
Forward transconductance N-Ch gfs 10 S VDS = 5 V, ID = 3 A 2
Forward transconductance P-Ch gfs 5 S VDS = -5 V, ID = -2 A 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts copper pins 1,2,5, and 6. The copper plane connects the drain pins 10

CAD (KiCad official)

  • Symbol: SI3590DV-T1-E3
  • Footprint: Package_SO:TSOP-6_1.65x3.05mm_P0.95mm
  • 3D model: TSOP-6 (KiCad packages3D, STEP)
  • 3D model files: si3590dv-t1-e3-etched.step / si3590dv-t1-e3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si3590dv-t1-e3.step / si3590dv-t1-e3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (13 pp, sha256 ca3ae2c3859cfa71, retrieved 2026-10-27, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF