component

SI3456DDV-T1-GE3-VB

Public Made by Adom

by adom

VBsemi Elec MOSFETs, TSOP-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorssi3456ddv-t1-ge3-vbfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
si3456ddv-t1-ge3-vb / README.md
History Download
Ray Publish 0.1.0 01c2f72 17d ago

SI3456DDV-T1-GE3-VB

VBsemi Elec · MOSFETs · TSOP-6

SI3456DDV-T1-GE3-VB from VBsemi Elec, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 D passive Drain, internally common with pins 2, 5 and 6; VDS max 30 V, continuous ID 6 A (package limited), pulsed IDM 25 A.
2 D passive Drain, internally common with pins 1, 5 and 6; VDS max 30 V, continuous ID 6 A (package limited), pulsed IDM 25 A.
3 G input Gate; VGS max ±20 V, threshold VGS(th) 0.5 V to 1.5 V at ID = 250 µA, gate leakage max ±100 nA.
4 S passive Source; continuous source-drain diode current 2.1 A at TC = 25 °C, body diode VSD typ. 0.82 V (max 1.2 V) at IS = 4.4 A.
5 D passive Drain, internally common with pins 1, 2 and 6; RDS(on) 0.023 Ω at VGS = 10 V and 0.027 Ω at VGS = 4.5 V.
6 D passive Drain, internally common with pins 1, 2 and 5; RDS(on) 0.023 Ω at VGS = 10 V and 0.027 Ω at VGS = 4.5 V.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TSOP-6
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 6 A TJ = 150 °C, TC = 25 °C 1
Continuous Drain Current ID 5.5 A TA = 25 °C 1
Continuous Drain Current ID 4.4 A TA = 70 °C 1
Pulsed Drain Current IDM 25 A t = 300 µs 1
Continuous Source-Drain Diode Current IS 2.1 A TC = 25 °C 1
Continuous Source-Drain Diode Current IS 1.1 A TA = 25 °C 1
Maximum Power Dissipation PD 2.5 W TC = 25 °C 1
Maximum Power Dissipation PD 1.6 W TC = 70 °C 1
Maximum Power Dissipation PD 1.3 W TA = 25 °C 1
Maximum Power Dissipation PD 0.8 W TA = 70 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Soldering Recommendations (Peak Temperature) 260 °C 1
Maximum Junction-to-Ambient RthJA 75 100 °C/W t ≤ 5 s 1
Maximum Junction-to-Foot (Drain) RthJF 40 50 °C/W Steady State 1
Maximum Junction-to-Ambient RthJA 166 °C/W Steady state (note d) 1
Drain-Source Breakdown Voltage V(BR)DSS 30 V VGS = 0 V, ID = 250 µA 2
Gate-Source Threshold Voltage VGS(th) 0.5 1.5 V VDS = VGS, ID = 250 µA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ±20 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 30 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 10 µA VDS = 30 V, VGS = 0 V, TJ = 70 °C 2
On-State Drain Current ID(on) 20 A VDS 5 V, VGS = 10 V 2
Drain-Source On-State Resistance RDS(on) 0.023 Ω VGS = 10 V, ID = 5.5 A 2
Drain-Source On-State Resistance RDS(on) 0.027 Ω VGS = 4.5 V, ID = 5 A 2
Total Gate Charge Qg 8.2 13 nC VDS = 15 V, VGS = 10 V, ID = 5.5 A 2
Total Gate Charge Qg 4.2 7 nC VDS = 15 V, VGS = 4.5 V, ID = 5.5 A 2
Gate Resistance Rg 2.5 12.6 25.2 Ω f = 1 MHz 2
Turn-On Delay Time td(on) 6 12 ns VDD = 15 V, RL = 3.4 Ω, ID 4.4 A, VGEN = 4.5 V, Rg = 1 Ω 2
Rise Time tr 20 30 ns VDD = 15 V, RL = 3.4 Ω, ID 4.4 A, VGEN = 4.5 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 14 21 ns VDD = 15 V, RL = 3.4 Ω, ID 4.4 A, VGEN = 4.5 V, Rg = 1 Ω 2
Fall Time tf 10 20 ns VDD = 15 V, RL = 3.4 Ω, ID 4.4 A, VGEN = 4.5 V, Rg = 1 Ω 2
Turn-On Delay Time td(on) 3 6 ns VDD = 15 V, RL = 3.4 Ω, ID 4.4 A, VGEN = 10 V, Rg = 1 Ω 2
Rise Time tr 11 20 ns VDD = 15 V, RL = 3.4 Ω, ID 4.4 A, VGEN = 10 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 20 30 ns VDD = 15 V, RL = 3.4 Ω, ID 4.4 A, VGEN = 10 V, Rg = 1 Ω 2
Fall Time tf 7 14 ns VDD = 15 V, RL = 3.4 Ω, ID 4.4 A, VGEN = 10 V, Rg = 1 Ω 2
Continuous Source-Drain Diode Current IS 2.1 A TC = 25 °C 2
Pulse Diode Forward Current ISM 25 A 2
Body Diode Voltage VSD 0.82 1.2 V IS = 4.4 A, VGS = 0 V 2
Body Diode Reverse Recovery Time trr 13 20 ns IF = 4.4 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 6 12 nC IF = 4.4 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Forward Transconductance gfs 24 S VDS = 15 V, ID = 5.5 A 2
Input Capacitance Ciss 424 pF VDS = 15 V, VGS = 0 V, f = 1 MHz 2
Output Capacitance Coss 100 pF VDS = 15 V, VGS = 0 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 42 pF VDS = 15 V, VGS = 0 V, f = 1 MHz 2
Gate-Source Charge Qgs 1.4 nC 2
Gate-Drain Charge Qgd 1.4 nC 2
Reverse Recovery Fall Time ta 8 ns 2
Reverse Recovery Rise Time tb 5 ns 2
Drain-Source Breakdown Voltage Temperature Coefficient ΔVDS/ΔTJ 30 mV/°C ID = 250 µA 2
Gate-Source Threshold Voltage Temperature Coefficient ΔVGS(th)/ΔTJ -4.8 mV/°C 2

CAD (KiCad official)

  • Symbol: SI3456DDV-T1-GE3-VB
  • Footprint: Package_SO:TSOP-6_1.65x3.05mm_P0.95mm
  • 3D model: TSOP-6 (KiCad packages3D, STEP)
  • 3D model files: si3456ddv-t1-ge3-vb-etched.step / si3456ddv-t1-ge3-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si3456ddv-t1-ge3-vb.step / si3456ddv-t1-ge3-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (9 pp, sha256 0c7192ecd219b880, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF