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SI3455ADV-T1-GE3-VB

VBsemi Elec · MOSFETs · TSOP-6

SI3455ADV-T1-GE3-VB from VBsemi Elec, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 D passive Drain. Pins 1, 2, 5, and 6 are internally connected together as the MOSFET drain. Drain-source breakdown voltage VDS = -30 V; continuous ID = -4.8 A at TC = 25 °C.
2 D passive Drain. Internally tied to pins 1, 5, and 6 (MOSFET drain).
3 G input Gate. Gate-source voltage rating VGS = ±20 V; typical VGS(th) between -0.5 V and -2.0 V (VDS = VGS, ID = -250 µA). Total gate charge Qg ≈ 5.1 nC at VGS = -4.5 V.
4 S passive Source. Reference terminal for VGS and body-diode anode (P-channel: source-to-drain body diode conducts when VSD > ~0.8 V, IS,cont = -2.5 A at TC = 25 °C).
5 D passive Drain. Internally tied to pins 1, 2, and 6 (MOSFET drain).
6 D passive Drain. Internally tied to pins 1, 2, and 5 (MOSFET drain).

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TSOP-6
Category Transistors/Thyristors
Pins 6

Ordering variants

Same part, different packaging or reel option.

  • SI3455ADV-T1-GE3-VB

CAD (KiCad official)

  • Symbol: SI3455ADV-T1-GE3-VB
  • Footprint: Package_SO:TSOP-6_1.65x3.05mm_P0.95mm
  • 3D model: TSOP-6 (KiCad packages3D, STEP)
  • 3D model files: si3455adv-t1-ge3-vb-etched.step / si3455adv-t1-ge3-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si3455adv-t1-ge3-vb.step / si3455adv-t1-ge3-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (None pp, sha256 39fedcb6d77bcb9c, retrieved 2026-08-17, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF