component
SI3455ADV-T1-GE3-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, TSOP-6. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
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page.json+7−4@@ -32,7 +32,7 @@ "number": "1", "name": "D", "type": "passive",- "description": "Drain. Pins 1, 2, 5, and 6 are internally connected together as the MOSFET drain. Drain-source breakdown voltage VDS = -30 V; continuous ID = -4.8 A at TC = 25 \u00b0C."+ "description": "Drain. Pins 1, 2, 5, and 6 are internally connected together as the MOSFET drain. Drain-source breakdown voltage VDS = -30 V; continuous ID = -4.8 A at TC = 25 °C." }, { "number": "2",@@ -44,13 +44,13 @@ "number": "3", "name": "G", "type": "input",- "description": "Gate. Gate-source voltage rating VGS = \u00b120 V; typical VGS(th) between -0.5 V and -2.0 V (VDS = VGS, ID = -250 \u00b5A). Total gate charge Qg \u2248 5.1 nC at VGS = -4.5 V."+ "description": "Gate. Gate-source voltage rating VGS = ±20 V; typical VGS(th) between -0.5 V and -2.0 V (VDS = VGS, ID = -250 µA). Total gate charge Qg ≈ 5.1 nC at VGS = -4.5 V." }, { "number": "4", "name": "S", "type": "passive",- "description": "Source. Reference terminal for VGS and body-diode anode (P-channel: source-to-drain body diode conducts when VSD > ~0.8 V, IS,cont = -2.5 A at TC = 25 \u00b0C)."+ "description": "Source. Reference terminal for VGS and body-diode anode (P-channel: source-to-drain body diode conducts when VSD > ~0.8 V, IS,cont = -2.5 A at TC = 25 °C)." }, { "number": "5",@@ -132,5 +132,8 @@ "docs/si3455adv-t1-ge3-vb-datasheet.pdf", "viewers/symbol.html", "viewers/footprint.html"- ]+ ],+ "visibility": {+ "public": true+ } }