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SI3433CDV-T1-GE3

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Vishay Intertech MOSFETs, TSOP-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SI3433CDV-T1-GE3

Vishay Intertech · MOSFETs · TSOP-6

SI3433CDV-T1-GE3 from Vishay Intertech, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 D passive Drain terminal of the P-channel MOSFET, electrically common with pins 2, 5 and 6, rated for a drain-source voltage VDS of -20 V.
2 D passive Drain terminal of the P-channel MOSFET, electrically common with pins 1, 5 and 6, rated for a drain-source voltage VDS of -20 V.
3 G input Gate terminal of the P-channel MOSFET, with a gate-source voltage limit of ±8 V.
4 S passive Source terminal of the P-channel MOSFET, which forms the source-drain body diode with a continuous diode current IS of -2.7 A at TC = 25 °C.
5 D passive Drain terminal of the P-channel MOSFET, electrically common with pins 1, 2 and 6, rated for a drain-source voltage VDS of -20 V.
6 D passive Drain terminal of the P-channel MOSFET, electrically common with pins 1, 2 and 5, rated for a drain-source voltage VDS of -20 V.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package TSOP-6
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source breakdown voltage VDS -20 V VGS = 0 V, ID = -250 μA 2
Gate-source threshold voltage VGS(th) -0.4 -1 V VDS = VGS, ID = -250 μA 2
Gate-source leakage IGSS -100 100 nA VDS = 0 V, VGS = ±8 V 2
Zero gate voltage drain current IDSS -1 μA VDS = -20 V, VGS = 0 V 2
Zero gate voltage drain current (TJ = 85 °C) IDSS -10 μA VDS = -20 V, VGS = 0 V, TJ = 85 °C 2
On-state drain current ID(on) -20 A VDS ≤ -5 V, VGS = -4.5 V 2
Drain-source on-state resistance RDS(on) 0.031 0.038 Ω VGS = -4.5 V, ID = -5.2 A 2
Drain-source on-state resistance RDS(on) 0.037 0.046 Ω VGS = -2.5 V, ID = -4.8 A 2
Drain-source on-state resistance RDS(on) 0.046 0.06 Ω VGS = -1.8 V, ID = -2 A 2
Total gate charge Qg 30 45 nC VDS = -10 V, VGS = -8 V, ID = -5.2 A 2
Total gate charge Qg 18 27 nC VDS = -10 V, VGS = -4.5 V, ID = -5.2 A 2
Turn-on delay time td(on) 20 30 ns VDD = -10 V, RL = 2.4 Ω, ID ≈ -4.2 A, VGEN = -4.5 V, Rg = 1 Ω 2
Rise time tr 22 35 ns VDD = -10 V, RL = 2.4 Ω, ID ≈ -4.2 A, VGEN = -4.5 V, Rg = 1 Ω 2
Turn-off delay time td(off) 50 75 ns VDD = -10 V, RL = 2.4 Ω, ID ≈ -4.2 A, VGEN = -4.5 V, Rg = 1 Ω 2
Fall time tf 20 30 ns VDD = -10 V, RL = 2.4 Ω, ID ≈ -4.2 A, VGEN = -4.5 V, Rg = 1 Ω 2
Turn-on delay time td(on) 10 15 ns VDD = -10 V, RL = 2.4 Ω, ID ≈ -4.2 A, VGEN = -8 V, Rg = 1 Ω 2
Rise time tr 12 25 ns VDD = -10 V, RL = 2.4 Ω, ID ≈ -4.2 A, VGEN = -8 V, Rg = 1 Ω 2
Fall time tf 15 25 ns VDD = -10 V, RL = 2.4 Ω, ID ≈ -4.2 A, VGEN = -8 V, Rg = 1 Ω 2
Continuous source-drain diode current IS -2.7 A TC = 25 °C 2
Pulse diode forward current ISM -20 A Pulse test; pulse width 300 μs, duty cycle 2 % 2
Body diode voltage VSD -0.8 -1.2 V IS = -4.2 A 2
Body diode reverse recovery time trr 45 70 ns IF = -4.2 A, di/dt = 100 A/μs, TJ = 25 °C 2
Body diode reverse recovery charge Qrr 40 60 nC IF = -4.2 A, di/dt = 100 A/μs, TJ = 25 °C 2
Drain-source voltage VDS -20 V TA = 25 °C 1
Gate-source voltage VGS -8 8 V TA = 25 °C 1
Continuous drain current ID -6 A TJ = 150 °C; TC = 25 °C 1
Continuous drain current ID -5.2 A TJ = 150 °C; TA = 25 °C 1
Continuous drain current ID -4.2 A TJ = 150 °C; TA = 70 °C 1
Pulsed drain current IDM -20 A 1
Continuous source-drain diode current IS -2.7 A TC = 25 °C 1
Continuous source-drain diode current IS -1.3 A TA = 25 °C 1
Maximum power dissipation PD 3.3 W TC = 25 °C 1
Maximum power dissipation PD 2.1 W TC = 70 °C 1
Maximum power dissipation PD 1.6 W TA = 25 °C 1
Maximum power dissipation PD 1 W TA = 70 °C 1
Operating junction and storage temperature range TJ, Tstg -55 150 °C 1
Maximum junction-to-ambient RthJA 60 80 °C/W t ≤ 5 s 1
Maximum junction-to-foot (drain) RthJF 25 38 °C/W Steady state 1
Maximum junction-to-ambient (steady state, note d) RthJA 110 °C/W Steady state (note d) 1

CAD (KiCad official)

  • Symbol: SI3433CDV-T1-GE3
  • Footprint: Package_SO:TSOP-6_1.65x3.05mm_P0.95mm
  • 3D model: TSOP-6 (KiCad packages3D, STEP)
  • 3D model files: si3433cdv-t1-ge3-etched.step / si3433cdv-t1-ge3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si3433cdv-t1-ge3.step / si3433cdv-t1-ge3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (11 pp, sha256 5494a01fd3c3900c, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF