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SI3424CDV-T1-GE3

Public Made by Adom

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Vishay Intertech MOSFETs, TSOP-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SI3424CDV-T1-GE3

Vishay Intertech · MOSFETs · TSOP-6

SI3424CDV-T1-GE3 from Vishay Intertech, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 D passive Drain terminal, electrically connected to pins 2, 5 and 6, rated for a 30 V drain-source voltage with 8 A continuous drain current at TC = 25 °C (package limited).
2 D passive Drain terminal, electrically connected to pins 1, 5 and 6, rated for a 30 V drain-source voltage with 8 A continuous drain current at TC = 25 °C (package limited).
3 G input Gate terminal, with a gate-source voltage rating of ±20 V.
4 S passive Source terminal, with a continuous source-drain diode current of 3 A at TC = 25 °C.
5 D passive Drain terminal, electrically connected to pins 1, 2 and 6, rated for a 30 V drain-source voltage with 8 A continuous drain current at TC = 25 °C (package limited).
6 D passive Drain terminal, electrically connected to pins 1, 2 and 5, rated for a 30 V drain-source voltage with 8 A continuous drain current at TC = 25 °C (package limited).

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package TSOP-6
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage VDS 30 V VGS = 0 V, ID = 250 µA 2
Gate-Source Threshold Voltage VGS(th) 1 2.5 V VDS = VGS, ID = 250 µA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ±20 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 30 V, VGS = 0 V 2
Zero Gate Voltage Drain Current (TJ = 85 °C) IDSS 10 µA VDS = 30 V, VGS = 0 V, TJ = 85 °C 2
On-State Drain Current ID(on) 20 A VDS = 5 V, VGS = 10 V 2
Drain-Source On-State Resistance RDS(on) 0.021 0.026 Ω VGS = 10 V, ID = 7.2 A 2
Drain-Source On-State Resistance RDS(on) 0.026 0.032 Ω VGS = 4.5 V, ID = 6.5 A 2
Total Gate Charge Qg 8.3 12.5 nC VDS = 15 V, VGS = 10 V, ID = 7.2 A 2
Total Gate Charge Qg 4.2 6.3 nC VDS = 24 V, VGS = 4.5 V, ID = 7.2 A 2
Gate Resistance Rg 0.6 3 6 Ω f = 1 MHz 2
Rise Time (VGEN = 10 V) tr 12 20 ns VDD = 15 V, RL = 2.6 Ω, ID ≅ 5.7 A, VGEN = 10 V, Rg = 1 Ω 2
Turn-Off Delay Time (VGEN = 10 V) td(off) 16 24 ns VDD = 15 V, RL = 2.6 Ω, ID ≅ 5.7 A, VGEN = 10 V, Rg = 1 Ω 2
Fall Time (VGEN = 10 V) tf 8 16 ns VDD = 15 V, RL = 2.6 Ω, ID ≅ 5.7 A, VGEN = 10 V, Rg = 1 Ω 2
Turn-On Delay Time (VGEN = 4.5 V) td(on) 10 20 ns VDD = 15 V, RL = 2.6 Ω, ID ≅ 5.7 A, VGEN = 4.5 V, Rg = 1 Ω 2
Rise Time (VGEN = 4.5 V) tr 22 33 ns VDD = 15 V, RL = 2.6 Ω, ID ≅ 5.7 A, VGEN = 4.5 V, Rg = 1 Ω 2
Turn-Off Delay Time (VGEN = 4.5 V) td(off) 15 23 ns VDD = 15 V, RL = 2.6 Ω, ID ≅ 5.7 A, VGEN = 4.5 V, Rg = 1 Ω 2
Fall Time (VGEN = 4.5 V) tf 9 18 ns VDD = 15 V, RL = 2.6 Ω, ID ≅ 5.7 A, VGEN = 4.5 V, Rg = 1 Ω 2
Body Diode Voltage VSD 0.8 1.2 V IS = 5.7 A 2
Body Diode Reverse Recovery Time trr 13 20 ns IF = 5.7 A, dI/dt = 100 A/µs 2
Body Diode Reverse Recovery Charge Qrr 5 10 nC IF = 5.7 A, dI/dt = 100 A/µs 2
Drain-Source Voltage VDS 30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 8 A TJ = 150 °C, TC = 25 °C 1
Continuous Drain Current ID 7.7 A TJ = 150 °C, TC = 70 °C 1
Continuous Drain Current ID 7.2 A TJ = 150 °C, TA = 25 °C 1
Continuous Drain Current ID 5.7 A TJ = 150 °C, TA = 70 °C 1
Pulsed Drain Current IDM 20 A t = 300 µs 1
Continuous Source-Drain Diode Current IS 3 A TC = 25 °C 1
Continuous Source-Drain Diode Current IS 1.7 A TA = 25 °C 1
Maximum Power Dissipation PD 3.6 W TC = 25 °C 1
Maximum Power Dissipation PD 2.3 W TC = 70 °C 1
Maximum Power Dissipation PD 2 W TA = 25 °C 1
Maximum Power Dissipation PD 1.3 W TA = 70 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient RthJA 50 62.5 °C/W t ≤ 5 s 1
Maximum Junction-to-Ambient (steady state) RthJA 110 °C/W Steady state, surface mounted (note e) 1
Maximum Junction-to-Foot (Drain) Steady State RthJF 28 35 °C/W Steady state 1

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts copper pins 1,2,5, and 6. The copper plane connects the drain pins 8

CAD (KiCad official)

  • Symbol: SI3424CDV-T1-GE3
  • Footprint: Package_SO:TSOP-6_1.65x3.05mm_P0.95mm
  • 3D model: TSOP-6 (KiCad packages3D, STEP)
  • 3D model files: si3424cdv-t1-ge3-etched.step / si3424cdv-t1-ge3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si3424cdv-t1-ge3.step / si3424cdv-t1-ge3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (11 pp, sha256 6ecd71f8ee8dc00e, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF