component
SI3401AHE3-TP
Public Made by Adomby adom
MCC Micro Commercial Components MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSI3401AHE3-TP
MCC Micro Commercial Components · MOSFETs · SOT-23
SI3401AHE3-TP from MCC Micro Commercial Components, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GATE | input | Gate terminal of the P-channel MOSFET; the datasheet rates gate-source voltage VGS at ±12 V. |
| 2 | SOURCE | passive | Source terminal of the P-channel MOSFET; body diode forward voltage VSD is specified at VGS=0V, IS=-1A. |
| 3 | DRAIN | passive | Drain terminal of the P-channel MOSFET; the datasheet rates drain-source voltage at -30 V and pulsed drain current IDM at -30 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MCC Micro Commercial Components |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 | V | 1 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| Continuous Drain Current | ID | -4.4 | A | 1 | |||
| Pulsed Drain Current | IDM | -30 | A | 1 | |||
| Total Power Dissipation | PD | 1.2 | W | 1 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | °C | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 1 | ||
| Thermal Resistance Junction to Ambient | RθJA | 104 | °C/W | Junction to Ambient | 1 | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | -30 | V | VGS=0V, ID=-250µA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS=-24V, VGS=0V | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±12V | 2 | |
| Gate-Threshold Voltage | VGS(th) | -1.3 | -0.7 | V | VDS=VGS, ID=-250µA | 2 | |
| Drain-Source On-Resistance | RDS(on) | 41 | 60 | mΩ | VGS=-10V, ID=-4.2A | 2 | |
| Drain-Source On-Resistance | RDS(on) | 47 | 70 | mΩ | VGS=-4.5V, ID=-4A | 2 | |
| Drain-Source On-Resistance | RDS(on) | 61 | 85 | mΩ | VGS=-2.5V, ID=-1A | 2 | |
| Forward Transconductance | gFS | 7 | S | VDS=-5V, ID=-5A | 2 | ||
| Diode Forward Voltage | VSD | -1 | V | VGS=0V, IS=-1A | 2 | ||
| Input Capacitance | Ciss | 1050 | pF | VDS=-15V, VGS=0V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 127 | pF | VDS=-15V, VGS=0V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 85 | pF | VDS=-15V, VGS=0V, f=1MHz | 2 | ||
| Turn-On Delay Time | td(on) | 6.5 | ns | VGS=-10V, VDS=-15V, RL=3.6Ω, RGEN=6Ω | 2 | ||
| Turn-On Rise Time | tr | 3.5 | ns | VGS=-10V, VDS=-15V, RL=3.6Ω, RGEN=6Ω | 2 | ||
| Turn-Off Delay Time | td(off) | 40 | ns | VGS=-10V, VDS=-15V, RL=3.6Ω, RGEN=6Ω | 2 | ||
| Turn-Off Fall Time | tf | 13 | ns | VGS=-10V, VDS=-15V, RL=3.6Ω, RGEN=6Ω | 2 |
CAD (KiCad official)
- Symbol:
SI3401AHE3-TP - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
si3401ahe3-tp-etched.step/si3401ahe3-tp-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si3401ahe3-tp.step/si3401ahe3-tp.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MCC Micro Commercial Components datasheet (4 pp, sha256
79e15339b4e03202, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).