component
SI3400A-TP
Public Made by Adomby adom
MCC Micro Commercial Components MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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si3400a-tp: specified limits as data (metadata.characteristics, 25 rows from the datasheet)
2 files changed
+340−1
README.md+32@@ -21,6 +21,38 @@ SI3400A-TP from MCC Micro Commercial Components, in a SOT-23. Pinout and pin des | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-source voltage | VDS | | | 30 | V | Maximum Ratings @ 25℃ unless otherwise specified | 1 |+| Continuous drain current | ID | | | 5.8 | A | Maximum Ratings @ 25℃ unless otherwise specified | 1 |+| Pulsed drain current | IDM | | | 30 | A | Maximum Ratings @ 25℃ unless otherwise specified; repetitive rating, pulse width limited by maximum junction temperature (note 1) | 1 |+| Gate-source voltage | VGS | -12 | | 12 | V | Maximum Ratings @ 25℃ unless otherwise specified; printed as ±12 V | 1 |+| Total power dissipation | PD | | | 0.4 | W | Maximum Ratings @ 25℃ unless otherwise specified | 1 |+| Operating junction temperature | TJ | -55 | | 150 | ℃ | Maximum Ratings @ 25℃ unless otherwise specified; printed as -55 to +150 | 1 |+| Storage temperature | TSTG | -55 | | 150 | ℃ | Maximum Ratings @ 25℃ unless otherwise specified; printed as -55 to +150 | 1 |+| Gate-source leakage current | IGSS | -100 | | 100 | nA | VGS =±12V, VDS = 0V | 2 |+| Drain-source on-resistance | RDS(on) | | 29 | 32 | mΩ | VGS =10V, ID =5.8A | 2 |+| Drain-source on-resistance | RDS(on) | | 32 | 38 | mΩ | VGS =4.5V, ID =5A | 2 |+| Drain-source on-resistance | RDS(on) | | 40 | 45 | mΩ | VGS =2.5V,ID=4A | 2 |+| Gate threshold voltage | VGS(th) | | 0.7 | 1.4 | V | VDS =VGS, ID =250µA | 2 |+| Drain-source breakdown voltage | V(BR)DSS | | 30 | | V | VGS = 0V, ID =250µA | 2 |+| Zero gate voltage drain current | IDSS | | 1 | | µA | VDS =24V,VGS = 0V | 2 |+| Forward transconductance | gFS | | 8 | | S | VDS =5V, ID =5A | 2 |+| Input capacitance | Ciss | | 1155 | | pF | VDS =15V,VGS =0V,f =1MHz | 2 |+| Output capacitance | Coss | | 108 | | pF | VDS =15V,VGS =0V,f =1MHz | 2 |+| Reverse transfer capacitance | Crss | | 84 | | pF | VDS =15V,VGS =0V,f =1MHz | 2 |+| Gate resistance | Rg | | 3.6 | | Ω | VDS =0V,VGS =0V,f =1MHz | 2 |+| Turn-on delay time | td(on) | | 5 | | ns | VGS=10V,VDS=15V, RL=2.7Ω,RGEN=3Ω | 2 |+| Turn-on rise time | tr | | 7 | | ns | VGS=10V,VDS=15V, RL=2.7Ω,RGEN=3Ω | 2 |+| Turn-off delay time | td(off) | | 40 | | ns | VGS=10V,VDS=15V, RL=2.7Ω,RGEN=3Ω | 2 |+| Turn-off fall time | tf | | 6 | | ns | VGS=10V,VDS=15V, RL=2.7Ω,RGEN=3Ω | 2 |+| Diode forward voltage | VSD | | 1 | | V | IS=1A,VGS=0V | 2 |+| Thermal resistance junction to ambient | RθJA | | 313 | | ℃/W | Printed in maximum ratings table; no test conditions printed | 1 |+ ## CAD (KiCad official) - Symbol: `SI3400A-TP`
page.json+308−1@@ -149,6 +149,313 @@ "Package": "SOT-23", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "42cf0d521c78dd49",+ "rows": [+ {+ "name": "Drain-source voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 30,+ "conditions": "Maximum Ratings @ 25℃ unless otherwise specified",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous drain current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 5.8,+ "conditions": "Maximum Ratings @ 25℃ unless otherwise specified",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed drain current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 30,+ "conditions": "Maximum Ratings @ 25℃ unless otherwise specified; repetitive rating, pulse width limited by maximum junction temperature (note 1)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-source voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -12,+ "typ": null,+ "max": 12,+ "conditions": "Maximum Ratings @ 25℃ unless otherwise specified; printed as ±12 V",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Total power dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 0.4,+ "conditions": "Maximum Ratings @ 25℃ unless otherwise specified",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating junction temperature",+ "symbol": "TJ",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "Maximum Ratings @ 25℃ unless otherwise specified; printed as -55 to +150",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Storage temperature",+ "symbol": "TSTG",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "Maximum Ratings @ 25℃ unless otherwise specified; printed as -55 to +150",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-source leakage current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VGS =±12V, VDS = 0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 29,+ "max": 32,+ "conditions": "VGS =10V, ID =5.8A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 32,+ "max": 38,+ "conditions": "VGS =4.5V, ID =5A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 40,+ "max": 45,+ "conditions": "VGS =2.5V,ID=4A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate threshold voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 0.7,+ "max": 1.4,+ "conditions": "VDS =VGS, ID =250µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source breakdown voltage",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 30,+ "max": null,+ "conditions": "VGS = 0V, ID =250µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": 1,+ "max": null,+ "conditions": "VDS =24V,VGS = 0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Forward transconductance",+ "symbol": "gFS",+ "kind": "electrical",+ "unit": "S",+ "min": null,+ "typ": 8,+ "max": null,+ "conditions": "VDS =5V, ID =5A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Input capacitance",+ "symbol": "Ciss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 1155,+ "max": null,+ "conditions": "VDS =15V,VGS =0V,f =1MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Output capacitance",+ "symbol": "Coss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 108,+ "max": null,+ "conditions": "VDS =15V,VGS =0V,f =1MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse transfer capacitance",+ "symbol": "Crss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 84,+ "max": null,+ "conditions": "VDS =15V,VGS =0V,f =1MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate resistance",+ "symbol": "Rg",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 3.6,+ "max": null,+ "conditions": "VDS =0V,VGS =0V,f =1MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-on delay time",+ "symbol": "td(on)",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 5,+ "max": null,+ "conditions": "VGS=10V,VDS=15V, RL=2.7Ω,RGEN=3Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-on rise time",+ "symbol": "tr",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 7,+ "max": null,+ "conditions": "VGS=10V,VDS=15V, RL=2.7Ω,RGEN=3Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-off delay time",+ "symbol": "td(off)",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 40,+ "max": null,+ "conditions": "VGS=10V,VDS=15V, RL=2.7Ω,RGEN=3Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-off fall time",+ "symbol": "tf",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 6,+ "max": null,+ "conditions": "VGS=10V,VDS=15V, RL=2.7Ω,RGEN=3Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Diode forward voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 1,+ "max": null,+ "conditions": "IS=1A,VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance junction to ambient",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": 313,+ "max": null,+ "conditions": "Printed in maximum ratings table; no test conditions printed",+ "source_page": 1,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -190,4 +497,4 @@ "visibility": { "public": true }-}+}