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Contents

README

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SI3400A-TP

MCC Micro Commercial Components · MOSFETs · SOT-23

SI3400A-TP from MCC Micro Commercial Components, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 GATE input Gate of the N-channel enhancement MOSFET, rated for a gate-source voltage VGS of ±12 V.
2 SOURCE passive Source of the N-channel enhancement MOSFET; the datasheet gives no separate pin-level electrical limit for this terminal.
3 DRAIN passive Drain of the N-channel enhancement MOSFET, rated for a drain-source voltage VDS of 30 V and a continuous drain current ID of 5.8 A.

Key specifications

Parameter Value
Manufacturer MCC Micro Commercial Components
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS 30 V Maximum Ratings @ 25℃ unless otherwise specified 1
Continuous drain current ID 5.8 A Maximum Ratings @ 25℃ unless otherwise specified 1
Pulsed drain current IDM 30 A Maximum Ratings @ 25℃ unless otherwise specified; repetitive rating, pulse width limited by maximum junction temperature (note 1) 1
Gate-source voltage VGS -12 12 V Maximum Ratings @ 25℃ unless otherwise specified; printed as ±12 V 1
Total power dissipation PD 0.4 W Maximum Ratings @ 25℃ unless otherwise specified 1
Operating junction temperature TJ -55 150 ℃ Maximum Ratings @ 25℃ unless otherwise specified; printed as -55 to +150 1
Storage temperature TSTG -55 150 ℃ Maximum Ratings @ 25℃ unless otherwise specified; printed as -55 to +150 1
Gate-source leakage current IGSS -100 100 nA VGS =±12V, VDS = 0V 2
Drain-source on-resistance RDS(on) 29 32 mΩ VGS =10V, ID =5.8A 2
Drain-source on-resistance RDS(on) 32 38 mΩ VGS =4.5V, ID =5A 2
Drain-source on-resistance RDS(on) 40 45 mΩ VGS =2.5V,ID=4A 2
Gate threshold voltage VGS(th) 0.7 1.4 V VDS =VGS, ID =250µA 2
Drain-source breakdown voltage V(BR)DSS 30 V VGS = 0V, ID =250µA 2
Zero gate voltage drain current IDSS 1 µA VDS =24V,VGS = 0V 2
Forward transconductance gFS 8 S VDS =5V, ID =5A 2
Input capacitance Ciss 1155 pF VDS =15V,VGS =0V,f =1MHz 2
Output capacitance Coss 108 pF VDS =15V,VGS =0V,f =1MHz 2
Reverse transfer capacitance Crss 84 pF VDS =15V,VGS =0V,f =1MHz 2
Gate resistance Rg 3.6 Ω VDS =0V,VGS =0V,f =1MHz 2
Turn-on delay time td(on) 5 ns VGS=10V,VDS=15V, RL=2.7Ω,RGEN=3Ω 2
Turn-on rise time tr 7 ns VGS=10V,VDS=15V, RL=2.7Ω,RGEN=3Ω 2
Turn-off delay time td(off) 40 ns VGS=10V,VDS=15V, RL=2.7Ω,RGEN=3Ω 2
Turn-off fall time tf 6 ns VGS=10V,VDS=15V, RL=2.7Ω,RGEN=3Ω 2
Diode forward voltage VSD 1 V IS=1A,VGS=0V 2
Thermal resistance junction to ambient RθJA 313 ℃/W Printed in maximum ratings table; no test conditions printed 1

CAD (KiCad official)

  • Symbol: SI3400A-TP
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: si3400a-tp-etched.step / si3400a-tp-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si3400a-tp.step / si3400a-tp.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MCC Micro Commercial Components datasheet (4 pp, sha256 42cf0d521c78dd49, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF