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SI3139KE-TP-ES
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ElecSuper MOSFETs, SOT-523. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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SI3139KE-TP-ES
ElecSuper · MOSFETs · SOT-523
SI3139KE-TP-ES from ElecSuper, in a SOT-523. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the P-channel MOSFET; gate-source voltage VGS is limited to ±12 V. |
| 2 | Source | passive | Source terminal of the P-channel MOSFET; the device is rated for a drain-source voltage BVDSS of -20 V. |
| 3 | Drain | passive | Drain terminal of the P-channel MOSFET; continuous drain current is -0.5 A at TA=25°C and -0.4 A at TA=75°C, with pulsed drain current IDM of -2.6 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ElecSuper |
| Package | SOT-523 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | BVDSS | -20 | V | VGS=0V, ID=-250uA | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | uA | VDS=-20V, VGS=0V | 3 | ||
| Gate-to-source Leakage Current | IGSS | -10 | 10 | uA | VDS=0V, VGS=±10V | 3 | |
| Gate Threshold Voltage | VGS(TH) | -0.35 | -0.62 | -1.2 | V | VGS=VDS, ID=-250uA | 3 |
| Drain-to-source On-resistance (VGS=-4.5V) | RDS(on) | 580 | 850 | mΩ | VGS=-4.5V, ID=-0.5A | 3 | |
| Drain-to-source On-resistance (VGS=-2.5V) | RDS(on) | 855 | 1200 | mΩ | VGS=-2.5V, ID=-0.3A | 3 | |
| Drain-to-source On-resistance (VGS=-1.8V) | RDS(on) | 1350 | 2000 | mΩ | VGS=-1.8V, ID=-0.2A | 3 | |
| Forward Voltage | VSD | -1.5 | V | VGS=0V, IS=-0.5A | 3 | ||
| Drain-Source Voltage | BVDSS | -20 | V | 2 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | 2 | ||
| Continuous Drain Current | ID | -0.5 | A | TA=25°C | 2 | ||
| Continuous Drain Current | ID | -0.4 | A | TA=75°C | 2 | ||
| Maximum Power Dissipation | PD | 0.18 | W | 2 | |||
| Pulsed Drain Current | IDM | -2.6 | A | 2 | |||
| Operating Junction Temperature | TJ | 150 | °C | 2 | |||
| Lead Temperature | TL | 260 | °C | 2 | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | 2 | ||
| Junction-to-Ambient Thermal Resistance | RθJA | 694 | °C/W | t ≤ 10s, single operation | 2 |
CAD (KiCad official)
- Symbol:
SI3139KE-TP-ES - Footprint:
Package_TO_SOT_SMD:SOT-523 - 3D model: SOT-523, generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.8 mm nominal SOT-523 height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
- 3D model files:
si3139ke-tp-es-etched.step/si3139ke-tp-es-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si3139ke-tp-es.step/si3139ke-tp-es.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ElecSuper datasheet (7 pp, sha256
486a22d86f70491d, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SI3139KE-TP-ES
**ElecSuper** · MOSFETs · SOT-523
SI3139KE-TP-ES from ElecSuper, in a SOT-523. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the P-channel MOSFET; gate-source voltage VGS is limited to ±12 V. |
| 2 | Source | passive | Source terminal of the P-channel MOSFET; the device is rated for a drain-source voltage BVDSS of -20 V. |
| 3 | Drain | passive | Drain terminal of the P-channel MOSFET; continuous drain current is -0.5 A at TA=25°C and -0.4 A at TA=75°C, with pulsed drain current IDM of -2.6 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ElecSuper |
| Package | SOT-523 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | BVDSS | -20 | | | V | VGS=0V, ID=-250uA | 3 |
| Zero Gate Voltage Drain Current | IDSS | | | -1 | uA | VDS=-20V, VGS=0V | 3 |
| Gate-to-source Leakage Current | IGSS | -10 | | 10 | uA | VDS=0V, VGS=±10V | 3 |
| Gate Threshold Voltage | VGS(TH) | -0.35 | -0.62 | -1.2 | V | VGS=VDS, ID=-250uA | 3 |
| Drain-to-source On-resistance (VGS=-4.5V) | RDS(on) | | 580 | 850 | mΩ | VGS=-4.5V, ID=-0.5A | 3 |
| Drain-to-source On-resistance (VGS=-2.5V) | RDS(on) | | 855 | 1200 | mΩ | VGS=-2.5V, ID=-0.3A | 3 |
| Drain-to-source On-resistance (VGS=-1.8V) | RDS(on) | | 1350 | 2000 | mΩ | VGS=-1.8V, ID=-0.2A | 3 |
| Forward Voltage | VSD | | | -1.5 | V | VGS=0V, IS=-0.5A | 3 |
| Drain-Source Voltage | BVDSS | -20 | | | V | | 2 |
| Gate-Source Voltage | VGS | -12 | | 12 | V | | 2 |
| Continuous Drain Current | ID | -0.5 | | | A | TA=25°C | 2 |
| Continuous Drain Current | ID | -0.4 | | | A | TA=75°C | 2 |
| Maximum Power Dissipation | PD | | | 0.18 | W | | 2 |
| Pulsed Drain Current | IDM | -2.6 | | | A | | 2 |
| Operating Junction Temperature | TJ | | | 150 | °C | | 2 |
| Lead Temperature | TL | | | 260 | °C | | 2 |
| Storage Temperature Range | Tstg | -55 | | 150 | °C | | 2 |
| Junction-to-Ambient Thermal Resistance | RθJA | | | 694 | °C/W | t ≤ 10s, single operation | 2 |
## CAD (KiCad official)
- Symbol: `SI3139KE-TP-ES`
- Footprint: `Package_TO_SOT_SMD:SOT-523`
- 3D model: SOT-523, generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.8 mm nominal SOT-523 height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
- 3D model files: `si3139ke-tp-es-etched.step` / `si3139ke-tp-es-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `si3139ke-tp-es.step` / `si3139ke-tp-es.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [ElecSuper datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603007775383703552) (7 pp, sha256 `486a22d86f70491d`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/si3139ke-tp-es-datasheet.pdf)