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SI3134KDWA-TP

Public Made by Adom

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MCC Micro Commercial Components MOSFETs, SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SI3134KDWA-TP

MCC Micro Commercial Components · MOSFETs · SOT-363

SI3134KDWA-TP from MCC Micro Commercial Components, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S2 passive Source terminal of the second N-channel MOSFET (channel 2); the datasheet gives no separate pin limit for this terminal.
2 G2 input Gate terminal of the second N-channel MOSFET; gate threshold VGS(th) is 0.35 V min, 0.7 V typ, 1.1 V max at VDS=VGS, ID=250µA.
3 D1 passive Drain terminal of the first N-channel MOSFET (channel 1); drain-source breakdown V(BR)DSS is 20 V min at VGS=0 V, ID=250µA.
4 S1 passive Source terminal of the first N-channel MOSFET (channel 1); body-diode forward voltage VSD is 1.2 V max at VGS=0 V, IS=500mA.
5 G1 input Gate terminal of the first N-channel MOSFET (channel 1); gate threshold VGS(th) is 0.35 V min, 0.7 V typ, 1.1 V max at VDS=VGS, ID=250µA.
6 D2 passive Drain terminal of the second N-channel MOSFET (channel 2); drain-source breakdown V(BR)DSS is 20 V min at VGS=0 V, ID=250µA.

Key specifications

Parameter Value
Manufacturer MCC Micro Commercial Components
Package SOT-363
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage V(BR)DSS 20 V VGS=0V, ID=250µA 2
Gate-Source Leakage Current IGSS -10 10 µA VDS=0V, VGS=±10V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS=20V, VGS=0V 2
Gate-Threshold Voltage VGS(th) 0.35 0.7 1.1 V VDS=VGS, ID=250µA 2
Drain-Source On-Resistance RDS(on) 300 mΩ VGS=4.5V, ID=500mA 2
Drain-Source On-Resistance RDS(on) 400 mΩ VGS=2.5V, ID=400mA 2
Drain-Source On-Resistance RDS(on) 700 mΩ VGS=1.8V, ID=200mA 2
Diode Forward Voltage VSD 1.2 V VGS=0V, IS=500mA 2
Input Capacitance Ciss 33 pF VDS=16V, VGS=0V, f=1MHz 2
Output Capacitance Coss 20 pF VDS=16V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 10 pF VDS=16V, VGS=0V, f=1MHz 2
Total Gate Charge Qg 800 pC VGS=4.5V, VDS=10V, ID=1A 2
Gate-Source Charge Qgs 290 pC VGS=4.5V, VDS=10V, ID=1A 2
Gate-Drain Charge Qgd 160 pC VGS=4.5V, VDS=10V, ID=1A 2
Turn-On Delay Time td(on) 4 ns VGS=4.5V, VDS=10V, IDS=0.5A, RG=10Ω 2
Turn-On Rise Time tr 18 ns VGS=4.5V, VDS=10V, IDS=0.5A, RG=10Ω 2
Turn-Off Delay Time td(off) 11.6 ns VGS=4.5V, VDS=10V, IDS=0.5A, RG=10Ω 2
Turn-Off Fall Time tf 24 ns VGS=4.5V, VDS=10V, IDS=0.5A, RG=10Ω 2
Drain-Source Voltage VDS 20 V 1
Gate-Source Voltage VGS 12 V 1
Drain Current-Continuous ID 0.75 A 1
Pulsed Drain Current IDM 3 A Repetitive rating; pulse width limited by junction temperature 1
Power Dissipation PD 0.15 W 1
Operating Junction Temperature Range -55 150 °C 1
Storage Temperature Range -55 150 °C 1
Maximum Thermal Resistance, Junction to Ambient 833 °C/W 1

CAD (KiCad official)

  • Symbol: SI3134KDWA-TP
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: si3134kdwa-tp-etched.step / si3134kdwa-tp-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si3134kdwa-tp.step / si3134kdwa-tp.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MCC Micro Commercial Components datasheet (5 pp, sha256 504ed9b21dca280c, retrieved 2026-10-20, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF