component

SI2393DS-T1-GE3

Public Made by Adom

by adom

Vishay Intertech MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorssi2393ds-t1-ge3factory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 23d ago
viewers si2393ds-t1-ge3: viewers · Ray 23d ago
package.json Publish 0.1.0 · Ray 23d ago
page.json Set visibility: public · Ray 23d ago
README.md Publish 0.1.0 · Ray 23d ago
si2393ds-t1-ge3-etched.glb Publish 0.1.0 · Ray 23d ago
si2393ds-t1-ge3-etched.step si2393ds-t1-ge3: factory component page (tier=lcsc) · Ray 23d ago
si2393ds-t1-ge3-hero.glb si2393ds-t1-ge3: hero GLB from the etched model (keeps the MPN mark) · Ray 23d ago
si2393ds-t1-ge3-hero.overlay.json Publish 0.1.0 · Ray 23d ago
si2393ds-t1-ge3.glb Publish 0.1.0 · Ray 23d ago
si2393ds-t1-ge3.kicad_mod Publish 0.1.0 · Ray 23d ago
si2393ds-t1-ge3.kicad_sym Publish 0.1.0 · Ray 23d ago
si2393ds-t1-ge3.lbr Publish 0.1.0 · Ray 23d ago
si2393ds-t1-ge3.step Publish 0.1.0 · Ray 23d ago

SI2393DS-T1-GE3

Vishay Intertech · MOSFETs · SOT-23

SI2393DS-T1-GE3 from Vishay Intertech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the P-channel MOSFET, with absolute maximum gate-source voltage rated at -20 V / +16 V.
2 S passive Source of the P-channel MOSFET; continuous source-drain diode current is rated -2.1 A at TC = 25 °C.
3 D passive Drain of the P-channel MOSFET; drain-source voltage is rated -30 V and continuous drain current is -7.5 A at TC = 25 °C.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source breakdown voltage VDS -30 V VGS = 0 V, ID = -250 μA 2
Gate-source threshold voltage VGS(th) -1 -2.2 V VDS = VGS, ID = 250 μA 2
Gate-source leakage IGSS 100 nA VDS = 0 V, VGS = -20 V / +16 V 2
Zero gate voltage drain current IDSS -1 μA VDS = -30 V, VGS = 0 V 2
Zero gate voltage drain current IDSS -15 μA VDS = -30 V, VGS = 0 V, TJ = 70 °C 2
On-state drain current ID(on) -10 A VDS ≤ -10 V, VGS = -10 V 2
Drain-source on-state resistance RDS(on) 0.0189 0.0227 Ω VGS = -10 V, ID = -5 A 2
Drain-source on-state resistance RDS(on) 0.0264 0.033 Ω VGS = -4.5 V, ID = -3 A 2
Total gate charge Qg 16.8 25.2 nC VDS = -15 V, VGS = -10 V, ID = -6.1 A 2
Total gate charge Qg 8.2 12.3 nC VDS = -15 V, VGS = -4.5 V, ID = -6.1 A 2
Gate resistance Rg 3.6 18.3 36.6 Ω f = 1 MHz 2
Turn-on delay time td(on) 14 28 ns VDD = -15 V, RL = 2.5 Ω, ID -4.8 A, VGEN = -10 V, Rg = 1 Ω 2
Rise time tr 8 16 ns VDD = -15 V, RL = 2.5 Ω, ID -4.8 A, VGEN = -10 V, Rg = 1 Ω 2
Turn-off delay time td(off) 48 96 ns VDD = -15 V, RL = 2.5 Ω, ID -4.8 A, VGEN = -10 V, Rg = 1 Ω 2
Fall time tf 32 64 ns VDD = -15 V, RL = 2.5 Ω, ID -4.8 A, VGEN = -10 V, Rg = 1 Ω 2
Turn-on delay time td(on) 30 45 ns VDD = -15 V, RL = 2.5 Ω, ID -4.8 A, VGEN = -4.5 V, Rg = 1 Ω 2
Rise time tr 85 170 ns VDD = -15 V, RL = 2.5 Ω, ID -4.8 A, VGEN = -4.5 V, Rg = 1 Ω 2
Turn-off delay time td(off) 34 68 ns VDD = -15 V, RL = 2.5 Ω, ID -4.8 A, VGEN = -4.5 V, Rg = 1 Ω 2
Fall time tf 40 80 ns VDD = -15 V, RL = 2.5 Ω, ID -4.8 A, VGEN = -4.5 V, Rg = 1 Ω 2
Continuous source-drain diode current IS -2.1 A TC = 25 °C 2
Pulse diode forward current ISM -50 A 2
Body diode voltage VSD -0.8 -1.2 V IS = -4.8 A, VGS = 0 V 2
Body diode reverse recovery time trr 21 42 ns IF = -4.8 A, di/dt = 100 A/μs, TJ = 25 °C 2
Body diode reverse recovery charge Qrr 8 16 nC IF = -4.8 A, di/dt = 100 A/μs, TJ = 25 °C 2
Drain-source voltage VDS -30 V 1
Gate-source voltage VGS -20 16 V 1
Continuous drain current ID -7.5 A TC = 25 °C (note e) 1
Continuous drain current ID -6.9 A TC = 70 °C 1
Continuous drain current ID -6.1 A TA = 25 °C (notes b, c) 1
Continuous drain current ID -4.8 A TA = 70 °C (notes b, c) 1
Pulsed drain current IDM -50 A t = 100 μs 1
Continuous source-drain diode current IS -2.1 A TC = 25 °C 1
Continuous source-drain diode current IS -1.1 A TA = 25 °C (notes b, c) 1
Maximum power dissipation PD 2.5 W TC = 25 °C 1
Maximum power dissipation PD 1.6 W TC = 70 °C 1
Maximum power dissipation PD 1.3 W TA = 25 °C (notes b, c) 1
Maximum power dissipation PD 0.8 W TA = 70 °C (notes b, c) 1
Operating junction and storage temperature range TJ, Tstg -55 150 °C 1
Maximum junction-to-ambient RthJA 75 100 °C/W t ≤ 5 s (note b) 1
Maximum junction-to-case (drain) RthJF 40 50 °C/W Steady state 1

CAD (KiCad official)

  • Symbol: SI2393DS-T1-GE3
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: si2393ds-t1-ge3-etched.step / si2393ds-t1-ge3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si2393ds-t1-ge3.step / si2393ds-t1-ge3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (7 pp, sha256 d5f2e1d58fddd2e9, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF