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SI2392ADS-T1-GE3

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Vishay Intertech MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SI2392ADS-T1-GE3

Vishay Intertech · MOSFETs · SOT-23

SI2392ADS-T1-GE3 from Vishay Intertech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MOSFET; the datasheet gives a gate-source voltage limit of ±20 V.
2 S passive Source of the N-channel MOSFET; the continuous source-drain diode current is rated at 2.1 A at TC = 25 °C.
3 D passive Drain of the N-channel MOSFET, rated for 100 V drain-source voltage; the drain pin also provides the thermal connection from the package to the PC board.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage VDS 100 V VGS = 0 V, ID = 250 μA 2
Gate-Source Threshold Voltage VGS(th) 1.2 3 V VDS = VGS, ID = 250 μA 2
Gate-Source Leakage IGSS 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS = 100 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 10 μA VDS = 100 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) 5 A VDS ≥ 5 V, VGS = 10 V 2
Drain-Source On-State Resistance RDS(on) 0.102 0.126 Ω VGS = 10 V, ID = 2 A 2
Drain-Source On-State Resistance RDS(on) 0.12 0.144 Ω VGS = 6 V, ID = 1 A 2
Drain-Source On-State Resistance RDS(on) 0.135 0.189 Ω VGS = 4.5 V, ID = 1 A 2
Total Gate Charge Qg 5.2 10.4 nC VDS = 50 V, VGS = 10 V, ID = 2.2 A 2
Total Gate Charge Qg 2.9 5.8 nC VDS = 50 V, VGS = 4.5 V, ID = 2.2 A 2
Gate Resistance Rg 0.9 4.3 8.6 Ω f = 1 MHz 2
Turn-On Delay Time (VGEN = 4.5 V) td(on) 40 60 ns VDD = 50 V, RL = 27.7 Ω, ID = 1.8 A, VGEN = 4.5 V, Rg = 1 Ω 2
Rise Time (VGEN = 4.5 V) tr 68 102 ns VDD = 50 V, RL = 27.7 Ω, ID = 1.8 A, VGEN = 4.5 V, Rg = 1 Ω 2
Turn-Off Delay Time (VGEN = 4.5 V) td(off) 14 21 ns VDD = 50 V, RL = 27.7 Ω, ID = 1.8 A, VGEN = 4.5 V, Rg = 1 Ω 2
Fall Time (VGEN = 4.5 V) tf 20 30 ns VDD = 50 V, RL = 27.7 Ω, ID = 1.8 A, VGEN = 4.5 V, Rg = 1 Ω 2
Turn-On Delay Time (VGEN = 10 V) td(on) 8 16 ns VDD = 50 V, RL = 27.7 Ω, ID = 1.8 A, VGEN = 10 V, Rg = 1 Ω 2
Rise Time (VGEN = 10 V) tr 10 20 ns VDD = 50 V, RL = 27.7 Ω, ID = 1.8 A, VGEN = 10 V, Rg = 1 Ω 2
Turn-Off Delay Time (VGEN = 10 V) td(off) 10 20 ns VDD = 50 V, RL = 27.7 Ω, ID = 1.8 A, VGEN = 10 V, Rg = 1 Ω 2
Fall Time (VGEN = 10 V) tf 7 14 ns VDD = 50 V, RL = 27.7 Ω, ID = 1.8 A, VGEN = 10 V, Rg = 1 Ω 2
Continuous Source-Drain Diode Current IS 2.1 A TC = 25 °C 2
Pulse Diode Forward Current ISM 8 A 2
Body Diode Voltage VSD 0.8 1.2 V IS = 1.8 A 2
Body Diode Reverse Recovery Time trr 23 35 ns IF = 1.8 A, dI/dt = 100 A/μs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 21 32 nC 2
Drain-Source Voltage VDS 100 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 3.1 A TJ = 150 °C, TC = 25 °C 1
Continuous Drain Current ID 2.5 A TJ = 150 °C, TC = 70 °C 1
Continuous Drain Current ID 2.2 A TJ = 150 °C, TA = 25 °C (b, c) 1
Continuous Drain Current ID 1.8 A TJ = 150 °C, TA = 70 °C (b, c) 1
Pulsed Drain Current IDM 8 A t = 300 μs 1
Continuous Source-Drain Diode Current IS 2.1 A TC = 25 °C 1
Continuous Source-Drain Diode Current IS 1 A TA = 25 °C (b, c) 1
Single Pulse Avalanche Current IAS 3 A L = 0.1 mH 1
Single Pulse Avalanche Energy EAS 0.45 mJ 1
Maximum Power Dissipation PD 2.5 W TC = 25 °C 1
Maximum Power Dissipation PD 1.6 W TC = 70 °C 1
Maximum Power Dissipation PD 1.25 W TA = 25 °C (b, c) 1
Maximum Power Dissipation PD 0.8 W TA = 70 °C (b, c) 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient RthJA 75 100 °C/W t ≤ 5 s (b, d) 1
Maximum Junction-to-Foot (Drain) RthJF 40 50 °C/W Steady state 1

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts copper pattern, a plane of copper overlies the drain pin and provides 8

CAD (KiCad official)

  • Symbol: SI2392ADS-T1-GE3
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: si2392ads-t1-ge3-etched.step / si2392ads-t1-ge3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si2392ads-t1-ge3.step / si2392ads-t1-ge3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (10 pp, sha256 73dc96db64d75c89, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF