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Si2377EDS-T1-GE3-VB

Public Made by Adom

by adom

VBsemi Elec MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Contents

README

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Si2377EDS-T1-GE3-VB

VBsemi Elec · MOSFETs · SOT-23

Si2377EDS-T1-GE3-VB from VBsemi Elec, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the P-channel MOSFET; the gate-source voltage is rated at ±20 V.
2 S passive Source of the P-channel MOSFET; the continuous source-drain diode current is rated at -2.1 A at TC = 25 °C.
3 D passive Drain of the P-channel MOSFET; the drain-source voltage is rated at -30 V and the continuous drain current at -5.6 A (TC = 25 °C).

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage (absolute maximum) VDS -30 V 1
Gate-Source Voltage (absolute maximum) VGS -20 20 V 1
Continuous Drain Current, TC = 25 °C (TJ = 150 °C) ID -5.6 A TC = 25 °C 1
Continuous Drain Current, TA = 25 °C ID -5.4 A TA = 25 °C, surface mounted on 1 in x 1 in FR4 board, t = 5 s (notes b, c) 1
Continuous Drain Current, TA = 70 °C ID -4.3 A TA = 70 °C (notes b, c) 1
Pulsed Drain Current IDM -18 A t = 100 µs 1
Continuous Source-Drain Diode Current, TC = 25 °C IS -2.1 A TC = 25 °C 1
Continuous Source-Drain Diode Current, TA = 25 °C IS -1 A TA = 25 °C (notes b, c) 1
Maximum Power Dissipation, TC = 25 °C PD 2.5 W TC = 25 °C 1
Maximum Power Dissipation, TC = 70 °C PD 1.6 W TC = 70 °C 1
Maximum Power Dissipation, TA = 25 °C PD 1.25 W TA = 25 °C (notes b, c) 1
Maximum Power Dissipation, TA = 70 °C PD 0.8 W TA = 70 °C (notes b, c) 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Junction-to-Ambient Thermal Resistance, t ≤ 5 s RthJA 75 100 °C/W t ≤ 5 s (notes b, d) 1
Junction-to-Ambient Thermal Resistance, steady state RthJA 166 °C/W Steady state (note d: maximum under steady state conditions) 1
Junction-to-Foot (Drain) Thermal Resistance, steady state RthJF 40 50 °C/W Steady state 1
Drain-Source Breakdown Voltage V(BR)DSS -30 V VGS = 0 V, ID = -250 µA 2
Gate-Source Threshold Voltage VGS(th) -0.5 -2 V VDS = VGS, ID = -250 µA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ±20 V 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS = -30 V, VGS = 0 V 2
Zero Gate Voltage Drain Current, TJ = 55 °C IDSS -5 µA VDS = -30 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) -2.5 A VDS = -5 V, VGS = -10 V 2
Drain-Source On-State Resistance, VGS = -10 V RDS(on) 0.046 Ω VGS = -10 V, ID = -4.4 A 2
Drain-Source On-State Resistance, VGS = -6 V RDS(on) 0.049 Ω VGS = -6 V, ID = -4 A 2
Drain-Source On-State Resistance, VGS = -4.5 V RDS(on) 0.054 Ω VGS = -4.5 V, ID = -3.6 A 2
Gate Resistance Rg 1.5 7.7 15.4 Ω f = 1 MHz 2
Total Gate Charge, VGS = -10 V Qg 24 36 nC VDS = -15 V, VGS = -10 V, ID = -5.4 A 2
Total Gate Charge, VGS = -4.5 V Qg 11.4 17 nC VDS = -15 V, VGS = -4.5 V, ID = -5.4 A 2
Turn-On Delay Time, VGEN = -10 V td(on) 13 20 ns VDD = -15 V, RL = 3.5 Ω, ID ≅ -4.3 A, VGEN = -10 V, Rg = 1 Ω 2
Rise Time, VGEN = -10 V tr 4 8 ns VDD = -15 V, RL = 3.5 Ω, ID ≅ -4.3 A, VGEN = -10 V, Rg = 1 Ω 2
Turn-Off Delay Time, VGEN = -10 V td(off) 38 57 ns VDD = -15 V, RL = 3.5 Ω, ID ≅ -4.3 A, VGEN = -10 V, Rg = 1 Ω 2
Fall Time, VGEN = -10 V tf 6 12 ns VDD = -15 V, RL = 3.5 Ω, ID ≅ -4.3 A, VGEN = -10 V, Rg = 1 Ω 2
Turn-On Delay Time, VGEN = -4.5 V td(on) 28 42 ns VDD = -15 V, RL = 3.5 Ω, ID ≅ -4.3 A, VGEN = -4.5 V, Rg = 1 Ω 2
Rise Time, VGEN = -4.5 V tr 16 24 ns VDD = -15 V, RL = 3.5 Ω, ID ≅ -4.3 A, VGEN = -4.5 V, Rg = 1 Ω 2
Turn-Off Delay Time, VGEN = -4.5 V td(off) 30 45 ns VDD = -15 V, RL = 3.5 Ω, ID ≅ -4.3 A, VGEN = -4.5 V, Rg = 1 Ω 2
Fall Time, VGEN = -4.5 V tf 10 20 ns VDD = -15 V, RL = 3.5 Ω, ID ≅ -4.3 A, VGEN = -4.5 V, Rg = 1 Ω 2
Continuous Source-Drain Diode Current (body diode) IS -2.1 A TC = 25 °C 2
Pulse Diode Forward Current ISM -80 A t = 100 µs 2
Body Diode Voltage VSD -0.8 -1.2 V IS = -4.3 A, VGS = 0 V 2
Body Diode Reverse Recovery Time trr 15 23 ns IF = -4.3 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 7 14 nC IF = -4.3 A, dI/dt = 100 A/µs, TJ = 25 °C 2

CAD (KiCad official)

  • Symbol: Si2377EDS-T1-GE3-VB
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: si2377eds-t1-ge3-vb-etched.step / si2377eds-t1-ge3-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si2377eds-t1-ge3-vb.step / si2377eds-t1-ge3-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (9 pp, sha256 0bba091c40a8472b, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF