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SI2342DS-T1-GE3

Public Made by Adom

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Vishay Intertech MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Symbol & Footprint

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Datasheet

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Contents

README

markdown

SI2342DS-T1-GE3

Vishay Intertech · MOSFETs · SOT-23

SI2342DS-T1-GE3 from Vishay Intertech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MOSFET, rated for VGS of ±5 V absolute maximum and driven from 1.2 V to 5 V in load-switch applications.
2 S passive Source of the N-channel MOSFET; the application note AN807 identifies pin 2 as the source for the SOT-23 package.
3 D passive Drain of the N-channel MOSFET, rated for VDS of 8 V; per AN807 the drain pin also provides the thermal connection from the package to the PC board.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 8 V 1
Gate-Source Voltage VGS -5 5 V 1
Continuous Drain Current ID 6 A TJ = 150 °C; TC = 25 °C (note e) 1
Continuous Drain Current ID 5.8 A TJ = 150 °C; TA = 70 °C (notes b, c) 1
Pulsed Drain Current IDM 30 A t = 300 µs 1
Continuous Source-Drain Diode Current IS 2.1 A TC = 25 °C 1
Continuous Source-Drain Diode Current IS 1.1 A TA = 25 °C (notes b, c) 1
Maximum Power Dissipation PD 2.5 W TC = 25 °C 1
Maximum Power Dissipation PD 1.6 W TC = 70 °C 1
Maximum Power Dissipation PD 1.3 W TA = 25 °C (notes b, c) 1
Maximum Power Dissipation PD 0.8 W TA = 70 °C (notes b, c) 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Soldering Recommendations (Peak Temperature) 260 Peak temperature 1
Maximum Junction-to-Ambient RthJA 75 100 °C/W Note b, d; t 5 s 1
Maximum Junction-to-Foot (Drain) RthJF 40 50 °C/W Steady state 1
Maximum Junction-to-Ambient (steady state) RthJA 166 °C/W Steady state (note d) 1
Drain-Source Breakdown Voltage VDS 8 V VGS = 0 V, ID = 250 µA 2
Gate-Source Threshold Voltage VGS(th) 0.35 0.8 V VDS = VGS, ID = 250 µA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 5 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 8 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 10 µA VDS = 8 V, VGS = 0 V, TJ = 70 °C 2
On-State Drain Current ID(on) 20 A VDS 5 V, VGS = 4.5 V 2
Drain-Source On-State Resistance RDS(on) 0.014 0.017 Ω VGS 4.5 V, ID = 7.2 A 2
Drain-Source On-State Resistance RDS(on) 0.016 0.02 Ω VGS 2.5 V, ID = 6.7 A 2
Drain-Source On-State Resistance RDS(on) 0.018 0.022 Ω VGS = 1.8 V, ID = 6.4 A 2
Drain-Source On-State Resistance RDS(on) 0.02 0.03 Ω VGS = 1.5 V, ID = 5.5 A 2
Drain-Source On-State Resistance RDS(on) 0.025 0.075 Ω VGS = 1.2 V, ID = 1.3 A 2
Total Gate Charge Qg 10.5 15.8 nC VDS = 4 V, VGS = 4.5 V, ID = 7.2 A 2
Total Gate Charge Qg 6 9 nC VDS = 4 V, VGS = 2.5 V, ID = 7.2 A 2
Gate Resistance Rg 2.4 12 24 Ω f = 1 MHz 2
Turn-On Delay Time td(on) 6 12 ns VDD = 4 V, RL = 0.7 Ω, ID 5.8 A, VGEN = 4.5 V, Rg = 1 Ω 2
Rise Time tr 14 20 ns VDD = 4 V, RL = 0.7 Ω, ID 5.8 A, VGEN = 4.5 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 65 98 ns VDD = 4 V, RL = 0.7 Ω, ID 5.8 A, VGEN = 4.5 V, Rg = 1 Ω 2
Fall Time tf 25 38 ns VDD = 4 V, RL = 0.7 Ω, ID 5.8 A, VGEN = 4.5 V, Rg = 1 Ω 2
Continuous Source-Drain Diode Current IS 2.1 A TC = 25 °C 2
Pulse Diode Forward Current ISM 30 A 2
Body Diode Voltage VSD 0.82 1.2 V IS = 5.8 A, VGS = 0 V 2
Body Diode Reverse Recovery Time trr 40 60 ns IF = 5.8 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 17 26 nC IF = 5.8 A, dI/dt = 100 A/µs, TJ = 25 °C 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts copper pattern, a plane of copper overlies the drain pin and provides 8

CAD (KiCad official)

  • Symbol: SI2342DS-T1-GE3
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: si2342ds-t1-ge3-etched.step / si2342ds-t1-ge3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si2342ds-t1-ge3.step / si2342ds-t1-ge3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (10 pp, sha256 45abb492e6e12949, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF