# SI2338DS-T1-GE3

**Vishay Intertech** · MOSFETs · SOT-23

SI2338DS-T1-GE3 from Vishay Intertech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET; the datasheet gives a gate-source voltage limit of VGS = ±20 V. |
| 2 | S | passive | Source of the N-channel MOSFET; the source pin is the return for the gate-source voltage. |
| 3 | D | passive | Drain of the N-channel MOSFET; the drain pin also provides the thermal connection from the package to the PC board, and the drain copper must carry the load current. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 30 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID |  |  | 6 | A | TJ = 150 °C; TC = 25 °C | 1 |
| Continuous Drain Current | ID |  |  | 5.5 | A | TJ = 150 °C; TA = 25 °C | 1 |
| Continuous Drain Current | ID |  |  | 4.4 | A | TJ = 150 °C; TA = 70 °C | 1 |
| Pulsed Drain Current | IDM |  |  | 25 | A | t = 300 µs | 1 |
| Continuous Source-Drain Diode Current | IS |  |  | 2.1 | A | TC = 25 °C | 1 |
| Continuous Source-Drain Diode Current | IS |  |  | 1.1 | A | TA = 25 °C | 1 |
| Maximum Power Dissipation | PD |  |  | 2.5 | W | TC = 25 °C | 1 |
| Maximum Power Dissipation | PD |  |  | 1.6 | W | TC = 70 °C | 1 |
| Maximum Power Dissipation | PD |  |  | 1.3 | W | TA = 25 °C | 1 |
| Maximum Power Dissipation | PD |  |  | 0.8 | W | TA = 70 °C | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 |  | 150 | °C |  | 1 |
| Soldering Recommendations (Peak Temperature) |  |  |  | 260 | °C |  | 1 |
| Maximum Junction-to-Ambient (t ≤ 5 s) | RthJA |  | 75 | 100 | °C/W | t ≤ 5 s | 1 |
| Maximum Junction-to-Foot (Drain), Steady State | RthJF |  | 40 | 50 | °C/W | Steady State | 1 |
| Drain-Source Breakdown Voltage | VDS | 30 |  |  | V | VGS = 0 V, ID = 250 µA | 2 |
| Gate-Source Threshold Voltage | VGS(th) | 1.2 |  | 2.5 | V | VDS = VGS, ID = 250 µA | 2 |
| Gate-Source Leakage | IGSS | -100 |  | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | µA | VDS = 30 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 10 | µA | VDS = 30 V, VGS = 0 V, TJ = 70 °C | 2 |
| On-State Drain Current | ID(on) | 20 |  |  | A | VDS 5 V, VGS = 10 V | 2 |
| Drain-Source On-State Resistance | RDS(on) |  | 0.023 | 0.028 | Ω | VGS 10 V, ID = 5.5 A | 2 |
| Drain-Source On-State Resistance | RDS(on) |  | 0.027 | 0.033 | Ω | VGS 4.5 V, ID = 5 A | 2 |
| Gate Resistance | Rg | 2.5 | 12.6 | 25.2 | Ω | f = 1 MHz | 2 |
| Total Gate Charge | Qg |  | 8.2 | 13 | nC | VDS = 15 V, VGS = 10 V, ID = 5.5 A | 2 |
| Total Gate Charge | Qg |  | 4.2 | 7 | nC | VDS = 15 V, VGS = 4.5 V, ID = 5.5 A | 2 |
| Turn-On Delay Time | td(on) |  | 6 | 12 | ns | VDD = 15 V, RL = 3.4, ID 4.4 A, VGEN = 4.5 V, Rg = 1 | 2 |
| Rise Time | tr |  | 20 | 30 | ns | VDD = 15 V, RL = 3.4, ID 4.4 A, VGEN = 4.5 V, Rg = 1 | 2 |
| Turn-Off Delay Time | td(off) |  | 14 | 21 | ns | VDD = 15 V, RL = 3.4, ID 4.4 A, VGEN = 4.5 V, Rg = 1 | 2 |
| Fall Time | tf |  | 10 | 20 | ns | VDD = 15 V, RL = 3.4, ID 4.4 A, VGEN = 4.5 V, Rg = 1 | 2 |
| Turn-On Delay Time | td(on) |  | 3 | 6 | ns | VDD = 15 V, RL = 3.4, ID 4.4 A, VGEN = 10 V, Rg = 1 | 2 |
| Rise Time | tr |  | 11 | 20 | ns | VDD = 15 V, RL = 3.4, ID 4.4 A, VGEN = 10 V, Rg = 1 | 2 |
| Turn-Off Delay Time | td(off) |  | 20 | 30 | ns | VDD = 15 V, RL = 3.4, ID 4.4 A, VGEN = 10 V, Rg = 1 | 2 |
| Fall Time | tf |  | 7 | 14 | ns | VDD = 15 V, RL = 3.4, ID 4.4 A, VGEN = 10 V, Rg = 1 | 2 |
| Body Diode Voltage | VSD |  | 0.82 | 1.2 | V | IS = 4.4 A, VGS 0 V | 2 |
| Body Diode Reverse Recovery Time | trr |  | 13 | 20 | ns | IF = 4.4 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |
| Body Diode Reverse Recovery Charge | Qrr |  | 6 | 12 | nC | IF = 4.4 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |

## Materials and finish

As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).

| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | copper |  | pattern, a plane of copper overlies the drain pin and provides | 8 |

## CAD (KiCad official)

- Symbol: `SI2338DS-T1-GE3`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `si2338ds-t1-ge3-etched.step` / `si2338ds-t1-ge3-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `si2338ds-t1-ge3.step` / `si2338ds-t1-ge3.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Vishay Intertech datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588880658215686144) (10 pp, sha256 `9ea524deaa44d305`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/si2338ds-t1-ge3-datasheet.pdf)