component

Si2338DS-T1-GE3-HXY

Public Made by Adom

by adom

HXY MOSFET MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistorsi2338ds-t1-ge3-hxyfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 12d ago
viewers si2338ds-t1-ge3-hxy: viewers · Ray 12d ago
package.json Publish 0.1.0 · Ray 12d ago
page.json Set visibility: public · Ray 12d ago
README.md Publish 0.1.0 · Ray 12d ago
si2338ds-t1-ge3-hxy-etched.glb Publish 0.1.0 · Ray 12d ago
si2338ds-t1-ge3-hxy-etched.step si2338ds-t1-ge3-hxy: factory component page (tier=lcsc) · Ray 12d ago
si2338ds-t1-ge3-hxy-hero.glb si2338ds-t1-ge3-hxy: hero GLB from the etched model (keeps the MPN mark) · Ray 12d ago
si2338ds-t1-ge3-hxy-hero.overlay.json Publish 0.1.0 · Ray 12d ago
si2338ds-t1-ge3-hxy.glb Publish 0.1.0 · Ray 12d ago
si2338ds-t1-ge3-hxy.kicad_mod Publish 0.1.0 · Ray 12d ago
si2338ds-t1-ge3-hxy.kicad_sym Publish 0.1.0 · Ray 12d ago
si2338ds-t1-ge3-hxy.lbr Publish 0.1.0 · Ray 12d ago
si2338ds-t1-ge3-hxy.step Publish 0.1.0 · Ray 12d ago

Si2338DS-T1-GE3-HXY

HXY MOSFET · MOSFETs · SOT-23

Si2338DS-T1-GE3-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MOSFET, rated ±20 V maximum gate-source voltage with a 1.0 V min to 2.5 V max threshold (VGS(th)) at 250 uA.
2 D passive Drain of the N-channel MOSFET, rated 30 V maximum drain-source voltage and 5.8 A continuous drain current.
3 S passive Source of the N-channel MOSFET, the reference terminal for the VGS and VDS ratings.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-23
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V , ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 22 28 mΩ VGS=10V , ID=4A 2
Static Drain-Source On-Resistance RDS(ON) 26 32 mΩ VGS=4.5V , ID=3A 2
Gate Threshold Voltage VGS(th) 1 1.5 2.5 V VGS=VDS , ID =250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=24V , VGS=0V , TJ=25℃ 2
Drain-Source Leakage Current IDSS 5 uA VDS=24V , VGS=0V , TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V , VDS=0V 2
Gate Resistance Rg 2.3 4.6 Ω VDS=0V , VGS=0V , f=1MHz 2
Total Gate Charge (4.5V) Qg 5 6.9 nC VDS=15V , VGS=4.5V , ID=4A 2
Gate-Source Charge Qgs 1.1 2.2 nC VDS=15V , VGS=4.5V , ID=4A 2
Gate-Drain Charge Qgd 2.6 2.8 nC VDS=15V , VGS=4.5V , ID=4A 2
Turn-On Delay Time Td(on) 2 4 ns VDD=15V , VGS=10V , RG=3.3, ID=4A 2
Rise Time Tr 34.4 62 ns VDD=15V , VGS=10V , RG=3.3, ID=4A 2
Turn-Off Delay Time Td(off) 13.2 26 ns VDD=15V , VGS=10V , RG=3.3, ID=4A 2
Fall Time Tf 4.8 9.6 ns VDD=15V , VGS=10V , RG=3.3, ID=4A 2
Input Capacitance Ciss 420 582 pF VDS=15V , VGS=0V , f=1MHz 2
Output Capacitance Coss 60 87 pF VDS=15V , VGS=0V , f=1MHz 2
Reverse Transfer Capacitance Crss 53 71 pF VDS=15V , VGS=0V , f=1MHz 2
Continuous Source Current IS 4.6 A VG=VD=0V , Force Current 2
Pulsed Source Current ISM 18.4 A VG=VD=0V , Force Current 2
Diode Forward Voltage VSD 1.2 V VGS=0V , IS=1A , TJ=25℃ 2
Drain-Source Voltage VDS 30 V TA=25℃ 1
Gate-Source Voltage VGS -20 20 V TA=25℃ 1
Drain Current-Continuous ID 5.8 A TA=25℃ 1
Drain Current-Pulsed IDM 18.4 A TA=25℃ (Note 1) 1
Maximum Power Dissipation PD 1 W TA=25℃ 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ TA=25℃ 1
Thermal Resistance, Junction-to-Ambient RθJA 125 ℃/W Note 2 1
BVDSS Temperature Coefficient △BVDSS/△T 0.023 V/℃ Reference to 25℃ , ID=1mA 2
VGS(th) Temperature Coefficient △VGS(th) -4.2 mV/℃ 2
Forward Transconductance gfs 7 S VDS=5V , ID=4A 2
Reverse Recovery Time trr 8.7 nS IF =4A , dI/dt=100A/µs , TJ=25℃ 2
Reverse Recovery Charge Qrr 2.3 nC IF =4A , dI/dt=100A/µs , TJ=25℃ 2

CAD (KiCad official)

  • Symbol: Si2338DS-T1-GE3-HXY
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: si2338ds-t1-ge3-hxy-etched.step / si2338ds-t1-ge3-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si2338ds-t1-ge3-hxy.step / si2338ds-t1-ge3-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 6e4976b503604295, retrieved 2026-10-26, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF