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SI2338DS-T1-BE3

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Vishay Intertech MOSFETs, SOT-23(TO-236). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SI2338DS-T1-BE3

Vishay Intertech · MOSFETs · SOT-23(TO-236)

SI2338DS-T1-BE3 from Vishay Intertech, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; gate-source voltage VGS is limited to ±20 V (absolute maximum).
2 S passive Source terminal; continuous source-drain diode current IS is rated 2.1 A at TC = 25 °C.
3 D passive Drain terminal; drain-source voltage VDS is rated 30 V and continuous drain current ID is rated 6 A at TC = 25 °C.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package SOT-23(TO-236)
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS 30 V 1
Gate-source voltage VGS -20 20 V 1
Continuous drain current ID 6 A TJ = 150 °C, TC = 25 °C 1
Continuous drain current ID 5.5 A TA = 25 °C 1
Continuous drain current ID 4.4 A TA = 70 °C 1
Pulsed drain current IDM 25 A t = 300 μs 1
Continuous source-drain diode current IS 2.1 A TC = 25 °C 1
Continuous source-drain diode current IS 1.1 A TA = 25 °C 1
Maximum power dissipation PD 2.5 W TC = 25 °C 1
Maximum power dissipation PD 1.6 W TC = 70 °C 1
Maximum power dissipation PD 1.3 W TA = 25 °C 1
Maximum power dissipation PD 0.8 W TA = 70 °C 1
Operating junction and storage temperature range TJ, Tstg -55 150 °C 1
Soldering recommendations (peak temperature) 260 °C peak temperature 1
Maximum junction-to-ambient RthJA 75 100 °C/W t 5 s 1
Maximum junction-to-foot (drain) RthJF 40 50 °C/W Steady state 1
Drain-source breakdown voltage VDS 30 V VGS = 0 V, ID = 250 μA 2
Gate-source threshold voltage VGS(th) 1.2 2.5 V VDS = VGS, ID = 250 μA 2
Gate-source leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero gate voltage drain current IDSS 1 μA VDS = 30 V, VGS = 0 V 2
Zero gate voltage drain current IDSS 10 μA VDS = 30 V, VGS = 0 V, TJ = 70 °C 2
On-state drain current ID(on) 20 A VDS 5 V, VGS = 10 V 2
Drain-source on-state resistance RDS(on) 0.028 Ω VGS = 10 V, ID = 5.5 A 2
Drain-source on-state resistance RDS(on) 0.033 Ω VGS = 4.5 V, ID = 5 A 2
Total gate charge Qg 13 nC VDS = 15 V, VGS = 10 V, ID = 5.5 A 2
Total gate charge Qg 7 nC VDS = 15 V, VGS = 4.5 V, ID = 5.5 A 2
Gate resistance Rg 2.5 12.6 25.2 Ω f = 1 MHz 2
Turn-on delay time (VGEN = 4.5 V) td(on) 6 12 ns VDD = 15 V, RL = 3.4 Ω, ID 4.4 A, VGEN = 4.5 V, Rg = 1 Ω 2
Rise time (VGEN = 4.5 V) tr 20 30 ns VDD = 15 V, RL = 3.4 Ω, ID 4.4 A, VGEN = 4.5 V, Rg = 1 Ω 2
Turn-off delay time (VGEN = 4.5 V) td(off) 14 21 ns VDD = 15 V, RL = 3.4 Ω, ID 4.4 A, VGEN = 4.5 V, Rg = 1 Ω 2
Fall time (VGEN = 4.5 V) tf 10 20 ns VDD = 15 V, RL = 3.4 Ω, ID 4.4 A, VGEN = 4.5 V, Rg = 1 Ω 2
Rise time (VGEN = 10 V) tr 11 20 ns VDD = 15 V, RL = 3.4 Ω, ID 4.4 A, VGEN = 10 V, Rg = 1 Ω 2
Turn-off delay time (VGEN = 10 V) td(off) 20 30 ns VDD = 15 V, RL = 3.4 Ω, ID 4.4 A, VGEN = 10 V, Rg = 1 Ω 2
Fall time (VGEN = 10 V) tf 7 14 ns VDD = 15 V, RL = 3.4 Ω, ID 4.4 A, VGEN = 10 V, Rg = 1 Ω 2
Continuous source-drain diode current IS 2.1 A TC = 25 °C 2
Pulse diode forward current ISM 25 A 2
Body diode voltage VSD 0.82 1.2 V IS = 4.4 A, VGS = 0 V 2
Body diode reverse recovery time trr 13 20 ns IF = 4.4 A, di/dt = 100 A/μs, TJ = 25 °C 2
Body diode reverse recovery charge Qrr 6 12 nC 2

CAD (KiCad official)

  • Symbol: SI2338DS-T1-BE3
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23(TO-236) (KiCad packages3D, STEP)
  • 3D model files: si2338ds-t1-be3-etched.step / si2338ds-t1-be3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si2338ds-t1-be3.step / si2338ds-t1-be3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (9 pp, sha256 032185a4f4ab4d3e, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF