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Contents

README

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SI2333DS-T1-GE3

Vishay Intertech · MOSFETs · SOT-23-3

SI2333DS-T1-GE3 from Vishay Intertech, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate control terminal rated for maximum gate-source voltage of ±8 V with gate-threshold voltage of -0.40 to -1.0 V; apply negative voltage relative to source to turn on the P-channel MOSFET.
2 Source power_in Source terminal providing the reference for gate-source voltage with integrated body diode forward voltage range of -0.7 to -1.2 V and maximum continuous source current (diode conduction) of -1.0 to -0.6 A.
3 Drain output Drain terminal rated for maximum drain-source voltage of -12 V with continuous drain current of -5.3 A at TJ=25°C and drain-source on-resistance of 0.032 Ω typical at VGS=-4.5 V, ID=-5.3 A.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package SOT-23-3
Category Transistors/Thyristors
Pins 3

CAD (KiCad official)

  • Symbol: SI2333DS-T1-GE3
  • Footprint: Package_TO_SOT_SMD:SOT-23-3
  • 3D model: SOT-23-3 (KiCad packages3D, STEP)
  • 3D model files: si2333ds-t1-ge3-etched.step / si2333ds-t1-ge3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si2333ds-t1-ge3.step / si2333ds-t1-ge3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (8 pp, sha256 b0dde897a5f2248e, retrieved 2026-09-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.2, primary claude-haiku-4-5-20251001 (text), consensus claude-sonnet-4-6 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF