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SI2333DDS-T1-GE3

Public Made by Adom

by adom

Vishay Intertech MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SI2333DDS-T1-GE3

Vishay Intertech · MOSFETs · SOT-23

SI2333DDS-T1-GE3 from Vishay Intertech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the P-channel MOSFET; the device absolute maximum gate-source voltage is VGS = ±8 V.
2 S passive Source of the P-channel MOSFET; the device absolute maximum drain-source voltage is VDS = -12 V.
3 D passive Drain of the P-channel MOSFET; the drain pin also provides the thermal connection from the package to the PC board.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -12 V 1
Gate-Source Voltage VGS -8 8 V 1
Continuous Drain Current ID -6 A TJ = 150 °C, TC = 25 °C 1
Continuous Drain Current ID -5.2 A TJ = 150 °C, TC = 70 °C 1
Continuous Drain Current ID -5 A TJ = 150 °C, TA = 25 °C 1
Continuous Drain Current ID -4 A TJ = 150 °C, TA = 70 °C 1
Pulsed Drain Current IDM -20 A t = 300 µs 1
Continuous Source-Drain Diode Current IS -1.4 A TC = 25 °C 1
Continuous Source-Drain Diode Current IS -0.63 A TA = 25 °C 1
Maximum Power Dissipation PD 1.7 W TC = 25 °C 1
Maximum Power Dissipation PD 1.1 W TC = 70 °C 1
Maximum Power Dissipation PD 1.2 W TA = 25 °C 1
Maximum Power Dissipation PD 0.6 W TA = 70 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient RthJA 100 130 °C/W t = 5 s 1
Maximum Junction-to-Foot (Drain) RthJF 60 75 °C/W Steady state 1
Maximum Junction-to-Ambient (steady state, note d) RthJA 175 °C/W Steady state (note d) 1
Drain-Source Breakdown Voltage VDS -12 V VDS = 0 V, ID = -250 µA 2
Gate-Source Threshold Voltage VGS(th) -0.4 -1 V VDS = VGS, ID = -250 µA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ±8 V 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS = -12 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS -10 µA VDS = -12 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) -20 A VDS = -5 V, VGS = -4.5 V 2
Drain-Source On-State Resistance RDS(on) 0.023 0.028 Ω VGS = -4.5 V, ID = -5 A 2
Drain-Source On-State Resistance RDS(on) 0.026 0.032 Ω VGS = -3.7 V, ID = -4.6 A 2
Drain-Source On-State Resistance RDS(on) 0.033 0.04 Ω VGS = -2.5 V, ID = -4.3 A 2
Drain-Source On-State Resistance RDS(on) 0.048 0.063 Ω VGS = -1.8 V, ID = -1 A 2
Drain-Source On-State Resistance RDS(on) 0.075 0.15 Ω VGS = -1.5 V, ID = -0.5 A 2
Total Gate Charge Qg 23 35 nC VDS = -6 V, VGS = -8 V, ID = -5 A 2
Total Gate Charge Qg 14 21 nC VDS = -6 V, VGS = -4.5 V, ID = -5 A 2
Gate Resistance Rg 1.9 9.5 19 Ω f = 1 MHz 2
Turn-On Delay Time td(on) 26 40 ns VDD = -6 V, RL = 6 Ω, ID = -4 A, VGEN = -4.5 V, RG = 1 Ω 2
Rise Time tr 24 40 ns VDD = -6 V, RL = 6 Ω, ID = -4 A, VGEN = -4.5 V, RG = 1 Ω 2
Turn-Off Delay Time td(off) 45 70 ns VDD = -6 V, RL = 6 Ω, ID = -4 A, VGEN = -4.5 V, RG = 1 Ω 2
Fall Time tf 20 35 ns VDD = -6 V, RL = 6 Ω, ID = -4 A, VGEN = -4.5 V, RG = 1 Ω 2
Continuous Source-Drain Diode Current IS -1.4 A TC = 25 °C 2
Pulse Diode Forward Current ISM -20 A 2
Body Diode Voltage VSD -0.8 -1.2 V IS = -4 A 2
Body Diode Reverse Recovery Time trr 24 48 ns IF = -4 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 8 16 nC IF = -4 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Reverse Recovery Fall Time ta 9 ns 2
Reverse Recovery Rise Time tb 15 ns 2
VDS Temperature Coefficient VDS/TJ -8 mV/°C ID = -250 µA 2
VGS(th) Temperature Coefficient VGS(th)/TJ 2.4 mV/°C 2
Forward Transconductance gfs 18 S VDS = -5 V, ID = -5 A 2
Input Capacitance Ciss 1275 pF VDS = -6 V, VGS = 0 V, f = 1 MHz 2
Output Capacitance Coss 255 pF VDS = -6 V, VGS = 0 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 236 pF VDS = -6 V, VGS = 0 V, f = 1 MHz 2
Gate-Source Charge Qgs 2.3 nC 2
Gate-Drain Charge Qgd 3.6 nC 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts copper pattern, a plane of copper overlies the drain pin and provides 8

CAD (KiCad official)

  • Symbol: SI2333DDS-T1-GE3
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: si2333dds-t1-ge3-etched.step / si2333dds-t1-ge3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si2333dds-t1-ge3.step / si2333dds-t1-ge3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (10 pp, sha256 d5bbd4e798ed69b6, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF