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SI2333DDS-T1-GE3-MS
Public Made by Adomby adom
MSKSEMI MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSI2333DDS-T1-GE3-MS
MSKSEMI · MOSFETs · SOT-23
SI2333DDS-T1-GE3-MS from MSKSEMI, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET, with a Gate-Source voltage rating of ±12 V and a threshold of -0.3 V min to -1 V max at ID=-250uA. |
| 2 | S | passive | Source of the P-channel MOSFET; continuous source current is rated -5.5 A and pulsed source current -21.2 A. |
| 3 | D | passive | Drain of the P-channel MOSFET, rated for -12 V Drain-Source voltage and -5.5 A continuous drain current with RDS(ON) of 25 mΩ typ at VGS=-4.5V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MSKSEMI |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -12 | V | 2 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | 2 | ||
| Drain Current, Continuous | ID | -5.5 | A | TC=25℃ | 2 | ||
| Drain Current, Continuous | ID | -3.5 | A | TC=100℃ | 2 | ||
| Drain Current, Pulsed | IDM | -21.2 | A | 2 | |||
| Power Dissipation | PD | 1.56 | W | TC=25℃ | 2 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 2 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 2 | ||
| Thermal Resistance Junction to ambient | RθJA | 80 | ℃/W | 2 | |||
| Drain-Source Breakdown Voltage | BVDSS | -12 | V | VGS=0V , ID=-250uA | 3 | ||
| Drain-Source Leakage Current | IDSS | -1 | uA | VDS=-20V , VGS=0V , TJ=25℃ | 3 | ||
| Drain-Source Leakage Current | IDSS | -10 | uA | VDS=-16V , VGS=0V , TJ=125℃ | 3 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±12V , VDS=0V | 3 | |
| Static Drain-Source On-Resistance | RDS(ON) | 25 | 35 | mΩ | VGS=-4.5V , ID=-4A | 3 | |
| Static Drain-Source On-Resistance | RDS(ON) | 35 | 50 | mΩ | VGS=-2.5V , ID=-3A | 3 | |
| Gate Threshold Voltage | VGS(th) | -0.3 | -0.6 | -1 | V | VGS=VDS , ID=-250uA | 3 |
| Continuous Source Current | IS | -5.5 | A | VG=VD=0V , Force Current | 3 | ||
| Pulsed Source Current | ISM | -21.2 | A | 3 | |||
| Diode Forward Voltage | VSD | -1.2 | V | VGS=0V , IS=-1A , TJ=25℃ | 3 | ||
| BVDSS Temperature Coefficient | △BVDSS/△TJ | -0.02 | V/℃ | Reference to 25℃ , ID=-1mA | 3 | ||
| VGS(th) Temperature Coefficient | △VGS(th) | 2 | mV/℃ | 3 | |||
| Forward Transconductance | gfs | 8.4 | S | VDS=-12V , IS=-3A | 3 | ||
| Total Gate Charge | Qg | 16.1 | nC | VDS=-10V , VGS=-4.5V , ID=-4A | 3 | ||
| Gate-Source Charge | Qgs | 1.8 | nC | VDS=-10V , VGS=-4.5V , ID=-4A | 3 | ||
| Gate-Drain Charge | Qgd | 3.8 | nC | VDS=-10V , VGS=-4.5V , ID=-4A | 3 | ||
| Turn-On Delay Time | Td(on) | 8.2 | nS | VDD=-10V , VGS=-4.5V , RG=25Ω ID=-1A | 3 | ||
| Rise Time | Tr | 30 | nS | VDD=-10V , VGS=-4.5V , RG=25Ω ID=-1A | 3 | ||
| Turn-Off Delay Time | Td(off) | 71.1 | nS | VDD=-10V , VGS=-4.5V , RG=25Ω ID=-1A | 3 | ||
| Fall Time | Tf | 19.8 | nS | VDD=-10V , VGS=-4.5V , RG=25Ω ID=-1A | 3 | ||
| Input Capacitance | Ciss | 1440 | pF | VDS=-15V , VGS=0V , F=1MHz | 3 | ||
| Output Capacitance | Coss | 155 | pF | VDS=-15V , VGS=0V , F=1MHz | 3 | ||
| Reverse Transfer Capacitance | Crss | 115 | pF | VDS=-15V , VGS=0V , F=1MHz | 3 |
CAD (KiCad official)
- Symbol:
SI2333DDS-T1-GE3-MS - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
si2333dds-t1-ge3-ms-etched.step/si2333dds-t1-ge3-ms-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si2333dds-t1-ge3-ms.step/si2333dds-t1-ge3-ms.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MSKSEMI datasheet (6 pp, sha256
463f8d3d09798068, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).