component
SI2333CDS-T1-E3
Public Made by Adomby adom
Vishay Intertech MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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si2333cds-t1-e3: specified limits as data (metadata.characteristics, 48 rows from the datasheet)
2 files changed
+639−1
README.md+55@@ -21,6 +21,61 @@ SI2333CDS-T1-E3 from Vishay Intertech, in a SOT-23. Pinout and pin descriptions | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Voltage | VDS | -12 | | | V | | 1 |+| Gate-Source Voltage | VGS | -8 | | 8 | V | | 1 |+| Continuous Drain Current | ID | -7.1 | | | A | TJ = 150 °C; TC = 25 °C | 1 |+| Continuous Drain Current | ID | -5.7 | | | A | TJ = 150 °C; TC = 70 °C | 1 |+| Continuous Drain Current | ID | -5.1 | | | A | TJ = 150 °C; TA = 25 °C; notes b, c | 1 |+| Continuous Drain Current | ID | -4 | | | A | TJ = 150 °C; TA = 70 °C; notes b, c | 1 |+| Pulsed Drain Current | IDM | -20 | | | A | | 1 |+| Continuous Source-Drain Diode Current | IS | -1 | | | A | TC = 25 °C | 1 |+| Continuous Source-Drain Diode Current | IS | -0.63 | | | A | TA = 25 °C; notes b, c | 1 |+| Maximum Power Dissipation | PD | | | 2.5 | W | TC = 25 °C | 1 |+| Maximum Power Dissipation | PD | | | 1.6 | W | TC = 70 °C | 1 |+| Maximum Power Dissipation | PD | | | 1.25 | W | TA = 25 °C; notes b, c | 1 |+| Maximum Power Dissipation | PD | | | 0.8 | W | TA = 70 °C; notes b, c | 1 |+| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | °C | | 1 |+| Maximum Junction-to-Ambient | RthJA | | 75 | 100 | °C/W | ≤ 5 s; notes b, d | 1 |+| Maximum Junction-to-Ambient (steady state) | RthJA | | | 166 | °C/W | Steady state; note d | 1 |+| Maximum Junction-to-Foot (Drain) | RthJF | | 40 | 50 | °C/W | Steady state | 1 |+| Drain-Source Breakdown Voltage | VDS | -12 | | | V | VDS = 0 V, ID = -250 µA | 2 |+| Gate-Source Threshold Voltage | VGS(th) | -0.4 | | -1 | V | VDS = VGS, ID = -250 µA | 2 |+| Gate-Source Leakage | IGSS | -100 | | 100 | nA | VDS = 0 V, VGS = ±8 V | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | -1 | µA | VDS = -12 V, VGS = 0 V | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | -10 | µA | VDS = -12 V, VGS = 0 V, TJ = 55 °C | 2 |+| On-State Drain Current | ID(on) | -20 | | | A | VDS ≤ -5 V, VGS = -4.5 V | 2 |+| Drain-Source On-State Resistance | RDS(on) | | 0.0285 | 0.035 | Ω | VGS = -4.5 V, ID = -5.1 A | 2 |+| Drain-Source On-State Resistance | RDS(on) | | 0.036 | 0.045 | Ω | VGS = -2.5 V, ID = -4.5 A | 2 |+| Drain-Source On-State Resistance | RDS(on) | | 0.046 | 0.059 | Ω | VGS = -1.8 V, ID = -2.0 A | 2 |+| Total Gate Charge | Qg | | 15 | 25 | nC | VDS = -6 V, VGS = -4.5 V, ID = -5.1 A | 2 |+| Total Gate Charge | Qg | | 9 | 15 | nC | VDS = -6 V, VGS = -2.5 V, ID = -5.1 A | 2 |+| Turn-On Delay Time | td(on) | | 13 | 20 | ns | VDD = -6 V, RL = 6 Ω, ID = -1 A, VGEN = -4.5 V, RG = 1 Ω | 2 |+| Rise Time | tr | | 35 | 60 | ns | VDD = -6 V, RL = 6 Ω, ID = -1 A, VGEN = -4.5 V, RG = 1 Ω | 2 |+| Turn-Off Delay Time | td(off) | | 45 | 70 | ns | VDD = -6 V, RL = 6 Ω, ID = -1 A, VGEN = -4.5 V, RG = 1 Ω | 2 |+| Fall Time | tf | | 12 | 20 | ns | VDD = -6 V, RL = 6 Ω, ID = -1 A, VGEN = -4.5 V, RG = 1 Ω | 2 |+| Continuous Source-Drain Diode Current | IS | | | -1 | A | TC = 25 °C | 2 |+| Pulse Diode Forward Current | ISM | | | -20 | A | | 2 |+| Body Diode Voltage | VSD | | -0.7 | -1.2 | V | IS = -1.0 A | 2 |+| Body Diode Reverse Recovery Time | trr | | 32 | 50 | ns | IF = -1.0 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |+| Body Diode Reverse Recovery Charge | Qrr | | 20 | 40 | nC | IF = -1.0 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |+| Drain-Source Breakdown Voltage Temperature Coefficient | ΔVDS/TJ | | -13 | | mV/°C | ID = -250 µA | 2 |+| Gate-Source Threshold Voltage Temperature Coefficient | ΔVGS(th)/TJ | | 2.6 | | mV/°C | | 2 |+| Forward Transconductance | gfs | | 18.5 | | S | VDS = -5 V, ID = -5.3 A | 2 |+| Input Capacitance | Ciss | | 1225 | | pF | VDS = -6 V, VGS = 0 V, f = 1 MHz | 2 |+| Output Capacitance | Coss | | 315 | | pF | VDS = -6 V, VGS = 0 V, f = 1 MHz | 2 |+| Reverse Transfer Capacitance | Crss | | 260 | | pF | VDS = -6 V, VGS = 0 V, f = 1 MHz | 2 |+| Gate-Source Charge | Qgs | | 1.9 | | nC | | 2 |+| Gate-Drain Charge | Qgd | | 3.8 | | nC | | 2 |+| Gate Resistance | Rg | | 4 | | Ω | f = 1 MHz | 2 |+| Reverse Recovery Fall Time | ta | | 16 | | ns | | 2 |+| Reverse Recovery Rise Time | tb | | 16 | | ns | | 2 |+ ## CAD (KiCad official) - Symbol: `SI2333CDS-T1-E3`
page.json+584−1@@ -149,6 +149,589 @@ "Package": "SOT-23", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "ad883b59f9362449",+ "rows": [+ {+ "name": "Drain-Source Voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -12,+ "typ": null,+ "max": null,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -8,+ "typ": null,+ "max": 8,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -7.1,+ "typ": null,+ "max": null,+ "conditions": "TJ = 150 °C; TC = 25 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -5.7,+ "typ": null,+ "max": null,+ "conditions": "TJ = 150 °C; TC = 70 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -5.1,+ "typ": null,+ "max": null,+ "conditions": "TJ = 150 °C; TA = 25 °C; notes b, c",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -4,+ "typ": null,+ "max": null,+ "conditions": "TJ = 150 °C; TA = 70 °C; notes b, c",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -20,+ "typ": null,+ "max": null,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Source-Drain Diode Current",+ "symbol": "IS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -1,+ "typ": null,+ "max": null,+ "conditions": "TC = 25 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Source-Drain Diode Current",+ "symbol": "IS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -0.63,+ "typ": null,+ "max": null,+ "conditions": "TA = 25 °C; notes b, c",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 2.5,+ "conditions": "TC = 25 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 1.6,+ "conditions": "TC = 70 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 1.25,+ "conditions": "TA = 25 °C; notes b, c",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 0.8,+ "conditions": "TA = 70 °C; notes b, c",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating Junction and Storage Temperature Range",+ "symbol": "TJ, Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Junction-to-Ambient",+ "symbol": "RthJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 75,+ "max": 100,+ "conditions": "≤ 5 s; notes b, d",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Junction-to-Ambient (steady state)",+ "symbol": "RthJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 166,+ "conditions": "Steady state; note d",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Junction-to-Foot (Drain)",+ "symbol": "RthJF",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 40,+ "max": 50,+ "conditions": "Steady state",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Breakdown Voltage",+ "symbol": "VDS",+ "kind": "electrical",+ "unit": "V",+ "min": -12,+ "typ": null,+ "max": null,+ "conditions": "VDS = 0 V, ID = -250 µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": -0.4,+ "typ": null,+ "max": -1,+ "conditions": "VDS = VGS, ID = -250 µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Leakage",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VDS = 0 V, VGS = ±8 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": -1,+ "conditions": "VDS = -12 V, VGS = 0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": -10,+ "conditions": "VDS = -12 V, VGS = 0 V, TJ = 55 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "On-State Drain Current",+ "symbol": "ID(on)",+ "kind": "electrical",+ "unit": "A",+ "min": -20,+ "typ": null,+ "max": null,+ "conditions": "VDS ≤ -5 V, VGS = -4.5 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 0.0285,+ "max": 0.035,+ "conditions": "VGS = -4.5 V, ID = -5.1 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 0.036,+ "max": 0.045,+ "conditions": "VGS = -2.5 V, ID = -4.5 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 0.046,+ "max": 0.059,+ "conditions": "VGS = -1.8 V, ID = -2.0 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 15,+ "max": 25,+ "conditions": "VDS = -6 V, VGS = -4.5 V, ID = -5.1 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 9,+ "max": 15,+ "conditions": "VDS = -6 V, VGS = -2.5 V, ID = -5.1 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-On Delay Time",+ "symbol": "td(on)",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 13,+ "max": 20,+ "conditions": "VDD = -6 V, RL = 6 Ω, ID = -1 A, VGEN = -4.5 V, RG = 1 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Rise Time",+ "symbol": "tr",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 35,+ "max": 60,+ "conditions": "VDD = -6 V, RL = 6 Ω, ID = -1 A, VGEN = -4.5 V, RG = 1 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-Off Delay Time",+ "symbol": "td(off)",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 45,+ "max": 70,+ "conditions": "VDD = -6 V, RL = 6 Ω, ID = -1 A, VGEN = -4.5 V, RG = 1 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Fall Time",+ "symbol": "tf",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 12,+ "max": 20,+ "conditions": "VDD = -6 V, RL = 6 Ω, ID = -1 A, VGEN = -4.5 V, RG = 1 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Continuous Source-Drain Diode Current",+ "symbol": "IS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -1,+ "conditions": "TC = 25 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Pulse Diode Forward Current",+ "symbol": "ISM",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -20,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Body Diode Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": -0.7,+ "max": -1.2,+ "conditions": "IS = -1.0 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Body Diode Reverse Recovery Time",+ "symbol": "trr",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 32,+ "max": 50,+ "conditions": "IF = -1.0 A, dI/dt = 100 A/µs, TJ = 25 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Body Diode Reverse Recovery Charge",+ "symbol": "Qrr",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 20,+ "max": 40,+ "conditions": "IF = -1.0 A, dI/dt = 100 A/µs, TJ = 25 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Breakdown Voltage Temperature Coefficient",+ "symbol": "ΔVDS/TJ",+ "kind": "temperature_coefficient",+ "unit": "mV/°C",+ "min": null,+ "typ": -13,+ "max": null,+ "conditions": "ID = -250 µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Threshold Voltage Temperature Coefficient",+ "symbol": "ΔVGS(th)/TJ",+ "kind": "temperature_coefficient",+ "unit": "mV/°C",+ "min": null,+ "typ": 2.6,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Forward Transconductance",+ "symbol": "gfs",+ "kind": "electrical",+ "unit": "S",+ "min": null,+ "typ": 18.5,+ "max": null,+ "conditions": "VDS = -5 V, ID = -5.3 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Input Capacitance",+ "symbol": "Ciss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 1225,+ "max": null,+ "conditions": "VDS = -6 V, VGS = 0 V, f = 1 MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Output Capacitance",+ "symbol": "Coss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 315,+ "max": null,+ "conditions": "VDS = -6 V, VGS = 0 V, f = 1 MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Transfer Capacitance",+ "symbol": "Crss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 260,+ "max": null,+ "conditions": "VDS = -6 V, VGS = 0 V, f = 1 MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Charge",+ "symbol": "Qgs",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 1.9,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Drain Charge",+ "symbol": "Qgd",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 3.8,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Resistance",+ "symbol": "Rg",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 4,+ "max": null,+ "conditions": "f = 1 MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Recovery Fall Time",+ "symbol": "ta",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 16,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Recovery Rise Time",+ "symbol": "tb",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 16,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -190,4 +773,4 @@ "visibility": { "public": true }-}+}