# SI2333AI-MS

**MSKSEMI** · MOSFETs · SOT-23

SI2333AI-MS from MSKSEMI, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET; gate-source voltage limit is ±12 V and VGS(th) is -0.45 to -1.0 V at ID=-250μA. |
| 2 | S | passive | Source of the P-channel MOSFET; the body diode forward current is limited to 1.6 A. |
| 3 | D | passive | Drain of the P-channel MOSFET; VDS is -18 V maximum, continuous ID is -6.5 A and pulsed IDM is -15 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | MSKSEMI |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | -18 | V |  | 2 |
| Gate-Source Voltage | VGS | -12 |  | 12 | V |  | 2 |
| Drain Current-Continuous | ID |  |  | -6.5 | A |  | 2 |
| Drain Current-Pulsed | IDM |  |  | -15 | A | Note 1: repetitive rating, pulse width limited by maximum junction temperature | 2 |
| Maximum Power Dissipation | PD |  |  | 2 | W |  | 2 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 |  | 150 | ℃ |  | 2 |
| Thermal Resistance, Junction-to-Ambient | RθJA |  |  | 74 | ℃/W | Note 2: surface mounted on FR4 board, t ≤ 10 sec | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -1 | μA | VDS=-20V,VGS=0V | 3 |
| Gate-Body Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±8V,VDS=0V | 3 |
| Gate Threshold Voltage | VGS(th) | -0.45 | -0.7 | -1 | V | VDS=VGS,ID=-250μA | 3 |
| Drain-Source On-State Resistance | RDS(ON) |  | 20 | 28 | mΩ | VGS=-4.5V, ID=-4.1A | 3 |
| Drain-Source On-State Resistance | RDS(ON) |  | 27 | 36 | mΩ | VGS=-2.5V, ID=-3A | 3 |
| Diode Forward Voltage | VSD |  |  | -1.2 | V | VGS=0V,IS=-1.6A | 3 |
| Diode Forward Current | IS |  |  | 1.6 | A | Note 2: surface mounted on FR4 board, t ≤ 10 sec | 3 |

## CAD (KiCad official)

- Symbol: `SI2333AI-MS`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `si2333ai-ms-etched.step` / `si2333ai-ms-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `si2333ai-ms.step` / `si2333ai-ms.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [MSKSEMI datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8756528664958263296) (7 pp, sha256 `7ce8879519bb1a05`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/si2333ai-ms-datasheet.pdf)