main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 16d ago
viewers si2333: viewers · Ray 16d ago
package.json Publish 0.1.0 · Ray 16d ago
page.json Set visibility: public · Ray 16d ago
README.md Publish 0.1.0 · Ray 16d ago
si2333-etched.glb Publish 0.1.0 · Ray 16d ago
si2333-etched.step si2333: factory component page (tier=lcsc) · Ray 16d ago
si2333-hero.glb si2333: hero GLB from the etched model (keeps the MPN mark) · Ray 16d ago
si2333-hero.overlay.json Publish 0.1.0 · Ray 16d ago
si2333.glb Publish 0.1.0 · Ray 16d ago
si2333.kicad_mod Publish 0.1.0 · Ray 16d ago
si2333.kicad_sym Publish 0.1.0 · Ray 16d ago
si2333.lbr Publish 0.1.0 · Ray 16d ago
si2333.step Publish 0.1.0 · Ray 16d ago

SI2333

XBLW · MOSFETs · SOT-23-3L

SI2333 from XBLW, in a SOT-23-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; gate-source voltage is limited to ±12V, with the device operating at gate voltages as low as 2.5V.
2 S passive Source terminal of the P-channel MOSFET; drain-source voltage rating is -20V.
3 D passive Drain terminal of the P-channel MOSFET; continuous drain current is -7A (pulsed -18.8A) at VDS = -20V.

Key specifications

Parameter Value
Manufacturer XBLW
Package SOT-23-3L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS -20 V VGS=0V, ID=-250uA 3
Static Drain-Source On-Resistance RDS(ON) 18 22 mΩ VGS=-4.5V, ID=-6.5A 3
Static Drain-Source On-Resistance RDS(ON) 25 39 mΩ VGS=-2.5V, ID=-5A 3
Gate Threshold Voltage VGS(th) -0.6 -0.8 -1.4 V VGS=VDS, ID=-250uA 3
Drain-Source Leakage Current IDSS -1 uA VDS=-20V, VGS=0V, TJ=25℃ 3
Gate-Source Leakage Current IGSS -100 100 nA VGS=±12V, VDS=0V 3
Continuous Source Current IS -7 A VG=VD=0V, Force Current 3
Pulsed Source Current ISM -18.8 A 3
Diode Forward Voltage VSD -1 V VGS=0V, IS=-1A, TJ=25℃ 3
Drain-Source Voltage VDS -20 V 2
Gate-Source Voltage VGS -12 12 V 2
Drain Current-Continuous ID -7 A 2
Drain Current-Pulsed IDM -18.8 A Note 1 2
Maximum Power Dissipation PD 1 W 2
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 2
Thermal Resistance, Junction-to-Ambient RθJA 125 ℃/W Note 2 2

CAD (KiCad official)

  • Symbol: SI2333
  • Footprint: Package_TO_SOT_SMD:SOT-23-3
  • 3D model: SOT-23-3L (KiCad packages3D, STEP)
  • 3D model files: si2333-etched.step / si2333-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si2333.step / si2333.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: XBLW datasheet (7 pp, sha256 8c67a00c22d74da6, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF