component

SI2328DS-T1-GE3

Public Made by Adom

by adom

Vishay Intertech MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorssi2328ds-t1-ge3factory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 17d ago
viewers si2328ds-t1-ge3: viewers · Ray 17d ago
package.json Publish 0.1.0 · Ray 17d ago
page.json Set visibility: public · Ray 17d ago
README.md Publish 0.1.0 · Ray 17d ago
si2328ds-t1-ge3-etched.glb Publish 0.1.0 · Ray 17d ago
si2328ds-t1-ge3-etched.step si2328ds-t1-ge3: factory component page (tier=lcsc) · Ray 17d ago
si2328ds-t1-ge3-hero.glb si2328ds-t1-ge3: hero GLB from the etched model (keeps the MPN mark) · Ray 17d ago
si2328ds-t1-ge3-hero.overlay.json Publish 0.1.0 · Ray 17d ago
si2328ds-t1-ge3.glb Publish 0.1.0 · Ray 17d ago
si2328ds-t1-ge3.kicad_mod Publish 0.1.0 · Ray 17d ago
si2328ds-t1-ge3.kicad_sym Publish 0.1.0 · Ray 17d ago
si2328ds-t1-ge3.lbr Publish 0.1.0 · Ray 17d ago
si2328ds-t1-ge3.step Publish 0.1.0 · Ray 17d ago

SI2328DS-T1-GE3

Vishay Intertech · MOSFETs · SOT-23

SI2328DS-T1-GE3 from Vishay Intertech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MOSFET; gate-source voltage is limited to ±20 V (absolute maximum), and the datasheet notes 100 % Rg tested.
2 S passive Source of the MOSFET; continuous source (diode conduction) current is rated at 0.6 A, and AN807 identifies pin 2 as the source.
3 D passive Drain of the MOSFET; drain-source voltage is rated at 100 V, and per AN807 the drain pin also provides the thermal connection from the package to the PC board.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage VDS 100 V VGS = 0 V, ID = 1 mA 2
Gate-Threshold Voltage VGS(th) 2 4 V VDS = VGS, ID = 250 µA 2
Gate-Body Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 100 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 75 µA VDS = 100 V, VGS = 0 V, TJ = 70 °C 2
On-State Drain Current ID(on) 6 A VDS 15 V, VGS = 10 V 2
Drain-Source On-Resistance RDS(on) 0.195 0.25 Ω VGS = 10 V, ID = 1.5 A 2
Gate Resistance Rg 0.5 1.3 2.4 Ω 2
Total Gate Charge Qg 3.3 5 nC VDS = 50 V, VGS = 10 V, ID = 1.5 A 2
Turn-On Delay Time td(on) 7 11 ns VDD = 50 V, RL = 33 Ω, ID 0.2 A, VGEN = 10 V, Rg = 6 Ω 2
Rise Time tr 11 17 ns VDD = 50 V, RL = 33 Ω, ID 0.2 A, VGEN = 10 V, Rg = 6 Ω 2
Turn-Off Delay Time td(off) 9 15 ns VDD = 50 V, RL = 33 Ω, ID 0.2 A, VGEN = 10 V, Rg = 6 Ω 2
Fall Time tf 10 15 ns VDD = 50 V, RL = 33 Ω, ID 0.2 A, VGEN = 10 V, Rg = 6 Ω 2
Source-Drain Reverse Recovery Time trr 50 100 ns IF = 1.5 A, dI/dt = 100 A/µs 2
Diode Forward Voltage VSD 0.8 1.2 V IS = 1 A, VGS = 0 V 2
Drain-Source Voltage VDS 100 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 1.5 A TJ = 150 °C, TA = 25 °C, 5 s 1
Continuous Drain Current ID 1.15 A TJ = 150 °C, TA = 25 °C, steady state 1
Continuous Drain Current ID 1.2 A TJ = 150 °C, TA = 70 °C, 5 s 1
Continuous Drain Current ID 0.92 A TJ = 150 °C, TA = 70 °C, steady state 1
Pulsed Drain Current IDM 6 A Pulse width limited by maximum junction temperature 1
Avalanche Current IAS 6 A L = 0.1 mH 1
Single Avalanche Energy EAS 1.8 mJ 1
Continuous Source Current (Diode Conduction) IS 0.6 A 1
Power Dissipation PD 1.25 W TA = 25 °C, 5 s 1
Power Dissipation PD 0.73 W TA = 25 °C, steady state 1
Power Dissipation PD 0.8 W TA = 70 °C, 5 s 1
Power Dissipation PD 0.47 W TA = 70 °C, steady state 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient RthJA 80 100 °C/W t ≤ 5 s 1
Maximum Junction-to-Ambient RthJA 130 170 °C/W Steady state 1
Maximum Junction-to-Foot RthJF 45 55 °C/W Steady state 1

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts copper pattern, a plane of copper overlies the drain pin and provides 6

CAD (KiCad official)

  • Symbol: SI2328DS-T1-GE3
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: si2328ds-t1-ge3-etched.step / si2328ds-t1-ge3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si2328ds-t1-ge3.step / si2328ds-t1-ge3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (8 pp, sha256 cb0114a6e6d57abd, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF