component
Si2328DS-T1-GE3-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, SOT-23-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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Si2328DS-T1-GE3-HXY
HXY MOSFET · MOSFETs · SOT-23-3L
Si2328DS-T1-GE3-HXY from HXY MOSFET, in a SOT-23-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS rated ±20 V maximum and threshold VGS(th) of 1.0 V min to 3.0 V max at ID = 250 μA. |
| 2 | S | passive | Source; the body diode runs from source to drain, with continuous diode current IS up to 4.5 A. |
| 3 | D | passive | Drain; VDS is rated 100 V maximum, with continuous drain current ID of 5 A at TC=25℃ and RDS(on) below 140 mΩ at VGS=10 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23-3L |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | 100 | 110 | V | VGS = 0V, ID = 250μA | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS = 100V, VGS = 0V | 2 | ||
| Gate to Body Leakage Current | IGSS | -100 | 100 | nA | VDS = 0V, VGS = ±20V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.95 | 3 | V | VDS = VGS, ID = 250μA | 2 |
| Static Drain-Source On-Resistance | RDS(on) | 95 | 140 | mΩ | VGS = 10V, ID = 3A | 2 | |
| Maximum Continuous Drain to Source Diode Forward Current | IS | 4.5 | A | 2 | |||
| Maximum Pulsed Drain to Source Diode Forward Current | ISM | 12 | A | 2 | |||
| Drain to Source Diode Forward Voltage | VSD | 1.3 | V | VGS = 0V, IS =3A | 2 | ||
| Drain-Source Voltage | VDS | 100 | V | TC=25℃ | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TC=25℃ | 1 | |
| Continuous Drain Current | ID@TC=25℃ | 5 | A | VGS @ 10V | 1 | ||
| Continuous Drain Current | ID@TC=70℃ | 2.2 | A | VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | 11 | A | 1 | |||
| Total Power Dissipation | PD@TC=25℃ | 1 | W | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 80 | ℃/W | 1 | |||
| Thermal Resistance Junction-Ambient | RθJA | 125 | ℃/W | 1 | |||
| Input Capacitance | Ciss | 196 | pF | VDS = 50V, VGS = 0V, f = 1.0MHz | 2 | ||
| Output Capacitance | Coss | 25.9 | pF | VDS = 50V, VGS = 0V, f = 1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 21.4 | pF | VDS = 50V, VGS = 0V, f = 1.0MHz | 2 | ||
| Total Gate Charge | Qg | 4.3 | nC | VDS = 50V, ID = 3A, VGS = 10V | 2 | ||
| Gate-Source Charge | Qgs | 3.5 | nC | VDS = 50V, ID = 3A, VGS = 10V | 2 | ||
| Gate-Drain Charge | Qgd | 3.1 | nC | VDS = 50V, ID = 3A, VGS = 10V | 2 | ||
| Turn-On Delay Time | td(on) | 14.7 | ns | VDD = 50V, IDS=3A, RG = 2Ω, VGEN = 10V | 2 | ||
| Turn-On Rise Time | tr | 3.5 | ns | VDD = 50V, IDS=3A, RG = 2Ω, VGEN = 10V | 2 | ||
| Turn-Off Delay Time | td(off) | 20.9 | ns | VDD = 50V, IDS=3A, RG = 2Ω, VGEN = 10V | 2 | ||
| Turn-Off Fall Time | tf | 2.7 | ns | VDD = 50V, IDS=3A, RG = 2Ω, VGEN = 10V | 2 | ||
| Body Diode Reverse Recovery Time | trr | 32.1 | ns | VGS = 0V, IF = 3A, di/dt =100A/μs | 2 | ||
| Body Diode Reverse Recovery Charge | Qrr | 39.4 | nC | VGS = 0V, IF = 3A, di/dt =100A/μs | 2 | ||
| Peak Reverse Recovery Current | Irrm | 2.1 | A | VGS = 0V, IF = 3A, di/dt =100A/μs | 2 |
CAD (KiCad official)
- Symbol:
Si2328DS-T1-GE3-HXY - Footprint:
Package_TO_SOT_SMD:SOT-23-3 - 3D model: SOT-23-3L (KiCad packages3D, STEP)
- 3D model files:
si2328ds-t1-ge3-hxy-etched.step/si2328ds-t1-ge3-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si2328ds-t1-ge3-hxy.step/si2328ds-t1-ge3-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
f715e485e1c484cb, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# Si2328DS-T1-GE3-HXY
**HXY MOSFET** · MOSFETs · SOT-23-3L
Si2328DS-T1-GE3-HXY from HXY MOSFET, in a SOT-23-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS rated ±20 V maximum and threshold VGS(th) of 1.0 V min to 3.0 V max at ID = 250 μA. |
| 2 | S | passive | Source; the body diode runs from source to drain, with continuous diode current IS up to 4.5 A. |
| 3 | D | passive | Drain; VDS is rated 100 V maximum, with continuous drain current ID of 5 A at TC=25℃ and RDS(on) below 140 mΩ at VGS=10 V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23-3L |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | 100 | 110 | | V | VGS = 0V, ID = 250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS = 100V, VGS = 0V | 2 |
| Gate to Body Leakage Current | IGSS | -100 | | 100 | nA | VDS = 0V, VGS = ±20V | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | 1.95 | 3 | V | VDS = VGS, ID = 250μA | 2 |
| Static Drain-Source On-Resistance | RDS(on) | | 95 | 140 | mΩ | VGS = 10V, ID = 3A | 2 |
| Maximum Continuous Drain to Source Diode Forward Current | IS | | | 4.5 | A | | 2 |
| Maximum Pulsed Drain to Source Diode Forward Current | ISM | | | 12 | A | | 2 |
| Drain to Source Diode Forward Voltage | VSD | | | 1.3 | V | VGS = 0V, IS =3A | 2 |
| Drain-Source Voltage | VDS | | | 100 | V | TC=25℃ | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | TC=25℃ | 1 |
| Continuous Drain Current | ID@TC=25℃ | | | 5 | A | VGS @ 10V | 1 |
| Continuous Drain Current | ID@TC=70℃ | | | 2.2 | A | VGS @ 10V | 1 |
| Pulsed Drain Current | IDM | | | 11 | A | | 1 |
| Total Power Dissipation | PD@TC=25℃ | | | 1 | W | | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance Junction-Case | RθJC | | | 80 | ℃/W | | 1 |
| Thermal Resistance Junction-Ambient | RθJA | | | 125 | ℃/W | | 1 |
| Input Capacitance | Ciss | | 196 | | pF | VDS = 50V, VGS = 0V, f = 1.0MHz | 2 |
| Output Capacitance | Coss | | 25.9 | | pF | VDS = 50V, VGS = 0V, f = 1.0MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 21.4 | | pF | VDS = 50V, VGS = 0V, f = 1.0MHz | 2 |
| Total Gate Charge | Qg | | 4.3 | | nC | VDS = 50V, ID = 3A, VGS = 10V | 2 |
| Gate-Source Charge | Qgs | | 3.5 | | nC | VDS = 50V, ID = 3A, VGS = 10V | 2 |
| Gate-Drain Charge | Qgd | | 3.1 | | nC | VDS = 50V, ID = 3A, VGS = 10V | 2 |
| Turn-On Delay Time | td(on) | | 14.7 | | ns | VDD = 50V, IDS=3A, RG = 2Ω, VGEN = 10V | 2 |
| Turn-On Rise Time | tr | | 3.5 | | ns | VDD = 50V, IDS=3A, RG = 2Ω, VGEN = 10V | 2 |
| Turn-Off Delay Time | td(off) | | 20.9 | | ns | VDD = 50V, IDS=3A, RG = 2Ω, VGEN = 10V | 2 |
| Turn-Off Fall Time | tf | | 2.7 | | ns | VDD = 50V, IDS=3A, RG = 2Ω, VGEN = 10V | 2 |
| Body Diode Reverse Recovery Time | trr | | 32.1 | | ns | VGS = 0V, IF = 3A, di/dt =100A/μs | 2 |
| Body Diode Reverse Recovery Charge | Qrr | | 39.4 | | nC | VGS = 0V, IF = 3A, di/dt =100A/μs | 2 |
| Peak Reverse Recovery Current | Irrm | | 2.1 | | A | VGS = 0V, IF = 3A, di/dt =100A/μs | 2 |
## CAD (KiCad official)
- Symbol: `Si2328DS-T1-GE3-HXY`
- Footprint: `Package_TO_SOT_SMD:SOT-23-3`
- 3D model: SOT-23-3L (KiCad packages3D, STEP)
- 3D model files: `si2328ds-t1-ge3-hxy-etched.step` / `si2328ds-t1-ge3-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `si2328ds-t1-ge3-hxy.step` / `si2328ds-t1-ge3-hxy.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [HXY MOSFET datasheet](docs/si2328ds-t1-ge3-hxy-datasheet.pdf) (6 pp, sha256 `f715e485e1c484cb`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/si2328ds-t1-ge3-hxy-datasheet.pdf)