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Ray Publish 0.1.0 e962110 20d ago

SI2323DS-T1-GE3-L

PIELENST · MOSFETs · SOT-23

SI2323DS-T1-GE3-L from PIELENST, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 GATE input Gate terminal of the P-channel MOSFET; the datasheet gives VGS(th) of -0.5 V min to -0.9 V typ at VDS=VGS, ID=-250µA, and gate-body leakage IGSS of ±100 nA max at VGS=±10 V.
2 SOURCE passive Source terminal of the P-channel MOSFET; the datasheet gives continuous source-drain diode current IS of -4.2 A at TC=25°C and pulse diode forward current ISM of -10 A.
3 DRAIN passive Drain terminal of the P-channel MOSFET; the datasheet gives drain-source breakdown V(BR)DSS of -20 V min at ID=-250µA, continuous drain current of -4.2 A, pulsed drain current IDM of -21 A, and power dissipation PD of 1.4 W.

Key specifications

Parameter Value
Manufacturer PIELENST
Package SOT-23
Category Transistors/Thyristors
Pins 3

CAD (KiCad official)

  • Symbol: SI2323DS-T1-GE3-L
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: si2323ds-t1-ge3-l-etched.step / si2323ds-t1-ge3-l-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si2323ds-t1-ge3-l.step / si2323ds-t1-ge3-l.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: PIELENST datasheet (4 pp, sha256 7b6a51c73f1f3726, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF