component
SI2323DS-T1-E3-MS
Public Made by Adomby adom
MSKSEMI MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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SI2323DS-T1-E3-MS
MSKSEMI · MOSFETs · SOT-23
SI2323DS-T1-E3-MS from MSKSEMI, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET; gate-source voltage is rated at ±12 V maximum, with threshold of -0.3 V min to -1.0 V max at ID=-250uA. |
| 2 | S | passive | Source of the P-channel MOSFET; continuous source current is rated at -4.5 A maximum. |
| 3 | D | passive | Drain of the P-channel MOSFET; drain-source voltage is rated at -20 V with continuous drain current of -4.5 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MSKSEMI |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -20 | V | 2 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | 2 | ||
| Drain Current, Continuous (TC=25℃) | ID | -4.5 | A | TC=25℃ | 2 | ||
| Drain Current, Continuous (TC=100℃) | ID | -3 | A | TC=100℃ | 2 | ||
| Drain Current, Pulsed | IDM | -18.8 | A | 2 | |||
| Power Dissipation (TC=25℃) | PD | 1.56 | W | TC=25℃ | 2 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 2 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 2 | ||
| Thermal Resistance Junction to ambient | RθJA | 80 | ℃/W | 2 | |||
| Drain-Source Breakdown Voltage | BVDSS | -20 | V | VGS=0V, ID=-250uA | 3 | ||
| Drain-Source Leakage Current (TJ=25℃) | IDSS | -1 | uA | VDS=-20V, VGS=0V, TJ=25℃ | 3 | ||
| Drain-Source Leakage Current (TJ=125℃) | IDSS | -10 | uA | VDS=-16V, VGS=0V, TJ=125℃ | 3 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±12V, VDS=0V | 3 | |
| Static Drain-Source On-Resistance (VGS=-4.5V) | RDS(ON) | 40 | 50 | mΩ | VGS=-4.5V, ID=-4A | 3 | |
| Static Drain-Source On-Resistance (VGS=-2.5V) | RDS(ON) | 50 | 60 | mΩ | VGS=-2.5V, ID=-3A | 3 | |
| Gate Threshold Voltage | VGS(th) | -0.3 | -0.7 | -1 | V | VGS=VDS, ID=-250uA | 3 |
| Continuous Source Current | IS | -4.5 | A | VG=VD=0V, Force Current | 3 | ||
| Pulsed Source Current | ISM | -9 | A | 3 | |||
| Diode Forward Voltage | VSD | -1.2 | V | VGS=0V, IS=-1A, TJ=25℃ | 3 |
CAD (KiCad official)
- Symbol:
SI2323DS-T1-E3-MS - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
si2323ds-t1-e3-ms-etched.step/si2323ds-t1-e3-ms-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si2323ds-t1-e3-ms.step/si2323ds-t1-e3-ms.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MSKSEMI datasheet (7 pp, sha256
d5a4130962d2867e, retrieved 2026-10-15, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).