component
Si2323DS-T1-E3-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSi2323DS-T1-E3-HXY
HXY MOSFET · MOSFETs · SOT-23
Si2323DS-T1-E3-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limit is ±10 V, drive down to 1.8 V, and the device is ESD protected (1500 V HBM). |
| 2 | S | passive | Source of the P-channel MOSFET; the body diode forward current is limited to -4 A. |
| 3 | D | passive | Drain of the P-channel MOSFET; VDS is -20 V max and continuous drain current is -5 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-Source Voltage | VGS | -10 | 10 | V | TA=25℃ | 1 | |
| Drain Current-Continuous | ID | -5 | A | TA=25℃ | 1 | ||
| Drain Current-Pulsed | IDM | -30 | A | Note 1: repetitive rating, pulse width limited by max junction temperature | 1 | ||
| Maximum Power Dissipation | PD | 1.4 | W | TA=25℃ | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Drain-Source Voltage | VDS | -20 | V | TA=25℃ | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 89.3 | ℃/W | Note 2: surface mounted on FR4 board, t ≤ 10 sec | 1 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=-20V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -10 | 10 | μA | VGS=±10V,VDS=0V | 2 | |
| Drain-Source Breakdown Voltage | BVDSS | -20 | V | VGS=0V ID=-250μA | 2 | ||
| Gate Threshold Voltage | VGS(th) | -0.35 | -0.55 | -0.9 | V | VDS=VGS,ID=-250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 30 | 40 | mΩ | VGS=-4.5V, ID=-4A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 44 | 60 | mΩ | VGS=-2.5V, ID=-4A | 2 | |
| Forward Transconductance | gFS | 8 | S | VDS=-5V,ID=-4A | 2 | ||
| Diode Forward Voltage | VSD | -1.2 | V | VGS=0V,IS=-4A | 2 | ||
| Diode Forward Current | IS | -4 | A | Note 2 | 2 |
CAD (KiCad official)
- Symbol:
Si2323DS-T1-E3-HXY - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
si2323ds-t1-e3-hxy-etched.step/si2323ds-t1-e3-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si2323ds-t1-e3-hxy.step/si2323ds-t1-e3-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (7 pp, sha256
23f1f06f6459e977, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).