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SI2323CDS-T1-GE3-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, SOT-23(TO-236). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
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Datasheet
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README
markdownSI2323CDS-T1-GE3-VB
VBsemi Elec · MOSFETs · SOT-23(TO-236)
SI2323CDS-T1-GE3-VB from VBsemi Elec, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET, rated for VGS of ±20 V with a threshold of -0.5 V to -2.0 V at ID = -250 µA. |
| 2 | S | passive | Source of the P-channel MOSFET; the body diode runs from drain to source with a continuous current limit of -2.1 A at TC = 25 °C. |
| 3 | D | passive | Drain of the P-channel MOSFET, rated for VDS of -30 V with continuous drain current of -5.6 A at TC = 25 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SOT-23(TO-236) |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Pulsed Drain Current | IDM | -18 | A | t = 100 µs | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Maximum Power Dissipation | PD | 2.5 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 1.25 | W | TA = 25 °C (b,c) | 1 | ||
| Continuous Source-Drain Diode Current | IS | -2.1 | A | TC = 25 °C | 1 | ||
| Junction-to-Ambient Thermal Resistance | RthJA | 75 | 100 | °C/W | t ≤ 5 s | 1 | |
| Junction-to-Foot (Drain) Thermal Resistance | RthJF | 40 | 50 | °C/W | Steady State | 1 | |
| Drain-Source Breakdown Voltage | VDS | -30 | V | VGS = 0 V, ID = - 250 µA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | -0.5 | -2 | V | VDS = VGS, ID = - 250 µA | 2 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS = - 30 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -5 | µA | VDS = - 30 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| On-State Drain Current | ID(on) | -2.5 | A | VDS ≤ - 5 V, VGS = - 10 V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.046 | Ω | VGS = - 10 V, ID = - 4.4 A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.049 | Ω | VGS = - 6 V, ID = - 4 A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.054 | Ω | VGS = - 4.5 V, ID = - 3.6 A | 2 | ||
| Forward Transconductance | gfs | 18 | S | VDS = - 15 V, ID = - 3.4 A | 2 | ||
| Total Gate Charge | Qg | 24 | 36 | nC | VDS = - 15 V, VGS = - 10 V, ID = - 5.4 A | 2 | |
| Total Gate Charge | Qg | 11.4 | 17 | nC | VDS = - 15 V, VGS = - 4.5 V, ID = - 5.4 A | 2 | |
| Gate Resistance | Rg | 1.5 | 7.7 | 15.4 | Ω | f = 1 MHz | 2 |
| Turn-On Delay Time | td(on) | 13 | 20 | ns | VDD = - 15 V, RL = 3.5 Ω, VGEN = - 10 V, Rg = 1 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 38 | 57 | ns | VDD = - 15 V, RL = 3.5 Ω, VGEN = - 10 V, Rg = 1 Ω | 2 | |
| Fall Time | tf | 6 | 12 | ns | VDD = - 15 V, RL = 3.5 Ω, VGEN = - 10 V, Rg = 1 Ω | 2 | |
| Turn-On Delay Time | td(on) | 28 | 42 | ns | VDD = - 15 V, RL = 3.5 Ω, VGEN = - 4.5 V, Rg = 1 Ω | 2 | |
| Rise Time | tr | 16 | 24 | ns | VDD = - 15 V, RL = 3.5 Ω, VGEN = - 4.5 V, Rg = 1 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 30 | 45 | ns | VDD = - 15 V, RL = 3.5 Ω, VGEN = - 4.5 V, Rg = 1 Ω | 2 | |
| Fall Time | tf | 10 | 20 | ns | VDD = - 15 V, RL = 3.5 Ω, VGEN = - 4.5 V, Rg = 1 Ω | 2 | |
| Continuous Source-Drain Diode Current | IS | -2.1 | A | TC = 25 °C | 2 | ||
| Pulse Diode Forward Current | ISM | -80 | A | t = 100 µs | 2 | ||
| Body Diode Voltage | VSD | -0.8 | -1.2 | V | IS = - 4.3 A, VGS = 0 V | 2 | |
| Body Diode Reverse Recovery Time | trr | 15 | 23 | ns | IF = - 4.3 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 7 | 14 | nC | IF = - 4.3 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 | |
| Drain-Source Voltage Temperature Coefficient | ΔVDS/TJ | -19 | mV/°C | ID = - 250 µA | 2 | ||
| Gate-Source Threshold Voltage Temperature Coefficient | ΔVGS(th)/TJ | 4 | mV/°C | ID = - 250 µA | 2 | ||
| Gate-Drain Charge | Qgd | 3.8 | nC | VDS = - 15 V, VGS = - 4.5 V, ID = - 5.4 A | 2 | ||
| Gate-Source Charge | Qgs | 3.4 | nC | VDS = - 15 V, VGS = - 4.5 V, ID = - 5.4 A | 2 |
CAD (KiCad official)
- Symbol:
SI2323CDS-T1-GE3-VB - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23(TO-236) (KiCad packages3D, STEP)
- 3D model files:
si2323cds-t1-ge3-vb-etched.step/si2323cds-t1-ge3-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si2323cds-t1-ge3-vb.step/si2323cds-t1-ge3-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (9 pp, sha256
6f2ee79a22a5a738, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).