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SI2321DS-T1-GE3-VB

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VBsemi Elec MOSFETs, SOT-23(TO-236). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SI2321DS-T1-GE3-VB

VBsemi Elec · MOSFETs · SOT-23(TO-236)

SI2321DS-T1-GE3-VB from VBsemi Elec, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±12 V, with threshold VGS(th) of -0.5 V to -1.5 V at ID = -250 µA.
2 S passive Source of the P-channel MOSFET; continuous source-drain body diode current is -2.1 A at TC = 25 °C.
3 D passive Drain; drain-source voltage rated -20 V with pulsed drain current of -10 A and RDS(on) of 0.060 Ω at VGS = -10 V.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SOT-23(TO-236)
Category Transistors/Thyristors
Pins 3

CAD (KiCad official)

  • Symbol: SI2321DS-T1-GE3-VB
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23(TO-236) (KiCad packages3D, STEP)
  • 3D model files: si2321ds-t1-ge3-vb-etched.step / si2321ds-t1-ge3-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si2321ds-t1-ge3-vb.step / si2321ds-t1-ge3-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (9 pp, sha256 16b5f7b41a7e7edb, retrieved 2026-10-26, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF