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SI2319DS-T1-GE3-VB

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VBsemi Elec MOSFETs, SOT-23(TO-236). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SI2319DS-T1-GE3-VB

VBsemi Elec · MOSFETs · SOT-23(TO-236)

SI2319DS-T1-GE3-VB from VBsemi Elec, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the P-channel MOSFET; gate-source voltage limit is ±20 V.
2 S passive Source terminal of the P-channel MOSFET; continuous source-drain diode current is -2.1 A at TC = 25 °C.
3 D passive Drain terminal of the P-channel MOSFET; drain-source voltage is -30 V and continuous drain current is -5.6 A at TC = 25 °C.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SOT-23(TO-236)
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate-Source Threshold Voltage VGS(th) -0.5 -2 V VDS = VGS, ID = -250 µA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ±20 V 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS = -30 V, VGS = 0 V 2
Zero Gate Voltage Drain Current (TJ = 55 °C) IDSS -5 µA VDS = -30 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) -2.5 A VDS = -5 V, VGS = -10 V 2
Drain-Source Breakdown Voltage VDS -30 V VGS = 0 V, ID = -250 µA 2
Drain-Source Voltage (absolute maximum) VDS -30 V 1
Gate-Source Voltage (absolute maximum) VGS -20 20 V 1
Continuous Drain Current ID -5.6 A TJ = 150 °C, TC = 25 °C 1
Continuous Drain Current ID -5.4 A TA = 25 °C (notes b, c) 1
Continuous Drain Current ID -4.3 A TA = 70 °C (notes b, c) 1
Pulsed Drain Current IDM -18 A t = 100 µs 1
Continuous Source-Drain Diode Current IS -2.1 A TC = 25 °C 1
Continuous Source-Drain Diode Current IS -1 A TA = 25 °C (notes b, c) 1
Maximum Power Dissipation PD 2.5 W TC = 25 °C 1
Maximum Power Dissipation PD 1.6 W TC = 70 °C 1
Maximum Power Dissipation PD 1.25 W TA = 25 °C (notes b, c) 1
Maximum Power Dissipation PD 0.8 W TA = 70 °C (notes b, c) 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient RthJA 75 100 °C/W t ≤ 5 s (notes b, d) 1
Maximum Junction-to-Ambient (steady state) RthJA 166 °C/W Steady state (note d) 1
Maximum Junction-to-Foot (Drain) RthJF 40 50 °C/W Steady state 1
Total Gate Charge Qg 24 36 nC VDS = -15 V, VGS = -10 V, ID = -5.4 A 2
Total Gate Charge Qg 11.4 17 nC VDS = -15 V, VGS = -4.5 V, ID = -5.4 A 2
Gate Resistance Rg 1.5 7.7 15.4 Ω f = 1 MHz 2
Turn-On Delay Time (VGS = -10 V) td(on) 13 20 ns VDD = -15 V, RL = 3.5, ID = -4.3 A, VGEN = -10 V, Rg = 1 2
Turn-Off Delay Time (VGS = -10 V) td(off) 38 57 ns VDD = -15 V, RL = 3.5, ID = -4.3 A, VGEN = -10 V, Rg = 1 2
Fall Time (VGS = -10 V) tf 6 12 ns VDD = -15 V, RL = 3.5, ID = -4.3 A, VGEN = -10 V, Rg = 1 2
Turn-On Delay Time (VGS = -4.5 V) td(on) 28 42 ns VDD = -15 V, RL = 3.5, ID = -4.3 A, VGEN = -4.5 V, Rg = 1 2
Turn-Off Delay Time (VGS = -4.5 V) td(off) 30 45 ns VDD = -15 V, RL = 3.5, ID = -4.3 A, VGEN = -4.5 V, Rg = 1 2
Fall Time (VGS = -4.5 V) tf 10 20 ns VDD = -15 V, RL = 3.5, ID = -4.3 A, VGEN = -4.5 V, Rg = 1 2
Pulse Diode Forward Current ISM -80 A t = 100 µs 2
Body Diode Voltage VSD -0.8 -1.2 V IS = -4.3 A, VGS = 0 V 2
Body Diode Reverse Recovery Charge Qrr 7 14 nC IF = -4.3 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Time trr 15 23 ns IF = -4.3 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Output Capacitance Coss 150 pF VDS = -15 V, VGS = 0 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 130 pF VDS = -15 V, VGS = 0 V, f = 1 MHz 2
Forward Transconductance gfs 18 S VDS = -15 V, ID = -3.4 A 2
Drain-Source On-State Resistance (VGS = -10 V) RDS(on) 0.046 Ω VGS = -10 V, ID = -4.4 A 2
Drain-Source On-State Resistance (VGS = -6 V) RDS(on) 0.049 Ω VGS = -6 V, ID = -4 A 2
Drain-Source On-State Resistance (VGS = -4.5 V) RDS(on) 0.054 Ω VGS = -4.5 V, ID = -3.6 A 2
Turn-On Rise Time (VGS = -10 V) tr 48 ns VDD = -15 V, RL = 3.5, ID = -4.3 A, VGEN = -10 V, Rg = 1 2
Turn-On Rise Time (VGS = -4.5 V) tr 16 24 ns VDD = -15 V, RL = 3.5, ID = -4.3 A, VGEN = -4.5 V, Rg = 1 2
Gate-Source Charge Qgs 3.4 nC 2
Gate-Drain Charge Qgd 3.8 nC 2
Reverse Recovery Fall Time ta 8 ns 2
Reverse Recovery Rise Time tb 7 ns 2
Drain-Source Breakdown Voltage Temperature Coefficient VDS/TJ -19 mV/°C ID = -250 µA 2

CAD (KiCad official)

  • Symbol: SI2319DS-T1-GE3-VB
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23(TO-236) (KiCad packages3D, STEP)
  • 3D model files: si2319ds-t1-ge3-vb-etched.step / si2319ds-t1-ge3-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si2319ds-t1-ge3-vb.step / si2319ds-t1-ge3-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (9 pp, sha256 90fff94f7bb0b1e8, retrieved 2026-10-15, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF