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SI2318DS-T1-E3-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, SOT-23-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSI2318DS-T1-E3-VB
VBsemi Elec · MOSFETs · SOT-23-3
SI2318DS-T1-E3-VB from VBsemi Elec, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET, with a gate-source voltage limit of ±20 V and a threshold of 1.5 V min to 2.5 V max at 250 µA. |
| 2 | S | passive | Source of the N-channel MOSFET, with a continuous diode-conduction source current of 3.8 A. |
| 3 | D | passive | Drain of the N-channel MOSFET, rated 40 V drain-source with 4.8 A continuous drain current at TC = 25 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SOT-23-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
CAD (KiCad official)
- Symbol:
SI2318DS-T1-E3-VB - Footprint:
Package_TO_SOT_SMD:SOT-23-3 - 3D model: SOT-23-3 (KiCad packages3D, STEP)
- 3D model files:
si2318ds-t1-e3-vb-etched.step/si2318ds-t1-e3-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si2318ds-t1-e3-vb.step/si2318ds-t1-e3-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (9 pp, sha256
d6bd3374d2ff3563, retrieved 2026-10-31, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).