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Contents

README

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Si2318CDS-T1-GE3

Vishay Intertech · MOSFETs · SOT-23

Si2318CDS-T1-GE3 from Vishay Intertech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MOSFET; gate-source voltage is rated at ±20 V (absolute maximum), per the datasheet's absolute maximum ratings.
2 S passive Source of the N-channel MOSFET; the source-drain body diode is rated at a continuous current IS of 1.75 A at TC = 25 °C.
3 D passive Drain of the MOSFET (40 V VDS rating); the drain pin also serves as the thermal connection from the package to the PC board, and continuous drain current is 5.6 A at TC = 25 °C.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package SOT-23
Category Transistors/Thyristors
Pins 3

CAD (KiCad official)

  • Symbol: Si2318CDS-T1-GE3
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: si2318cds-t1-ge3-etched.step / si2318cds-t1-ge3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si2318cds-t1-ge3.step / si2318cds-t1-ge3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (10 pp, sha256 5d503614ebd004b7, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF