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SI2318A

Public Made by Adom

by adom

UMW MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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page.json si2318a: specified limits as data (metadata.characteristics, 25 rows from the datasheet) · Ray 17d ago
README.md si2318a: specified limits as data (metadata.characteristics, 25 rows from the datasheet) · Ray 17d ago
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si2318a-etched.step si2318a: factory component page (tier=lcsc) · Ray 24d ago
si2318a-hero.glb si2318a: hero GLB from the etched model (keeps the MPN mark) · Ray 24d ago
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SI2318A

UMW · MOSFETs · SOT-23

SI2318A from UMW, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input GATE terminal of the 40V N-channel MOSFET; gate-source voltage is rated ±20 V (VGS) per the absolute maximum ratings.
2 S passive SOURCE terminal of the N-channel MOSFET, the reference for gate-source voltage and the source of the body diode (IS 23 A, ISM 14 A per the electrical characteristics table).
3 D passive DRAIN terminal of the N-channel MOSFET; drain-source voltage is rated 40 V (VDS) and continuous drain current 5.6 A at TC=25°C per the absolute maximum ratings.

Key specifications

Parameter Value
Manufacturer UMW
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 40 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 5.6 A TC=25°C 1
Continuous Drain Current ID 4.5 A TC=70°C 1
Continuous Drain Current ID 4.3 A TA=25°C, surface mounted on 1in x 1in FR4, t=5 s (notes b,c) 1
Continuous Drain Current ID 3.5 A TA=70°C, surface mounted on 1in x 1in FR4, t=5 s (notes b,c) 1
Pulsed Drain Current IDM 20 A 1
Power Dissipation PD 2.1 W TC=25°C 1
Power Dissipation PD 1.3 W TC=70°C 1
Power Dissipation PD 1.25 W TA=25°C, surface mounted on 1in x 1in FR4, t=5 s (notes b,c) 1
Power Dissipation PD 0.8 W TA=70°C, surface mounted on 1in x 1in FR4, t=5 s (notes b,c) 1
Junction Temperature TJ 150 °C 2
Storage Temperature Range TSTG -55 150 °C 2
Thermal Resistance, Junction-to-Ambient RthJA 100 °C/W Surface mounted on 1in x 1in FR4, t=5 s (notes b,c) 2
Thermal Resistance, Junction-to-Ambient (steady state) RthJA 130 °C/W Maximum under steady state conditions (note d) 2
Thermal Resistance, Junction-to-Foot RthJF 60 °C/W 2
Drain-Source Breakdown Voltage VDSS 40 V ID=250µA, VGS=0V 3
Zero Gate Voltage Drain Current IDSS 1 µA VDS=40V, VGS=0V 3
Zero Gate Voltage Drain Current IDSS 10 µA VDS=10V, VGS=0V, TJ=70°C 3
Gate-Body Leakage Current IGSS -100 100 nA VDS=0V, VGS=±20V 3
Gate Threshold Voltage VGS(th) 1.2 2.5 V VDS=VGS, ID=250µA 3
On State Drain Current ID(ON) 20 A VGS=10V, VDS≥5V 3
Static Drain-Source On-Resistance RDS(ON) 36 mΩ VGS=10V, ID=4.7A 3
Static Drain-Source On-Resistance RDS(ON) 46 mΩ VGS=4.5V, ID=3.9A 3
Diode Forward Voltage VSD 1.2 V IS=3.5A, VGS=0V 4

CAD (KiCad official)

  • Symbol: SI2318A
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: si2318a-etched.step / si2318a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si2318a.step / si2318a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UMW datasheet (10 pp, sha256 a8729e97d7553a80, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF