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Si2316BDS-T1-GE3-HXY

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HXY MOSFET MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistorsi2316bds-t1-ge3-hxyfactory-2.0.0extractor-text

Verified Si2316BDS-T1-GE3-HXY

by Ray · last 2 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

2 Nov 2026RayPublished by the parts factory: tier lcsc, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: Si2316BDS-T1-GE3-HXY · SOT-23 · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 6-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: SOT-23
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-d1r33iwd/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ si2316bds-t1-ge3-hxy.kicad_sym✓ si2316bds-t1-ge3-hxy.kicad_mod✓ si2316bds-t1-ge3-hxy.step
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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

markdown

Si2316BDS-T1-GE3-HXY

HXY MOSFET · MOSFETs · SOT-23

Si2316BDS-T1-GE3-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the MOSFET, with gate-source voltage rated at ±20 V per the absolute maximum ratings.
2 D passive Drain of the MOSFET, rated at 30 V drain-source voltage and 4 A continuous drain current at TA=25℃ per the absolute maximum ratings.
3 S passive Source of the MOSFET, the reference terminal for the 30 V drain-source and ±20 V gate-source ratings; the datasheet gives no separate source-pin limit.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-23
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V 1
Gate-Source Voltage VGS -20 20 V 1
Drain Current-Continuous ID 4 A 1
Drain Current-Pulsed (Note 1) IDM 16.4 A 1
Maximum Power Dissipation PD 1 W 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Ambient (Note 2) RθJA 125 ℃/W 1
Drain-Source Breakdown Voltage V(BR)DSS 30 V VGS=0V, ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=30V, VGS=0V, 2
Gate to Body Leakage Current IGSS -100 100 nA VDS=0V, VGS= ±20V 2
Gate Threshold Voltage VGS(th) 1 1.5 2.5 V VDS=VGS, ID=250μA 2
Static Drain-Source on-Resistance (VGS=10V) RDS(on) 29 38 mΩ VGS=10V, ID=4A 2
Static Drain-Source on-Resistance (VGS=4.5V) RDS(on) 45 65 mΩ VGS=4.5V, ID=3A 2
Maximum Continuous Drain to Source Diode Forward Current IS 4 A 2
Maximum Pulsed Drain to Source Diode Forward Current ISM 16 A 2
Drain to Source Diode Forward Voltage VSD 1.2 V VGS=0V, IS=4A 2
Input Capacitance Ciss 233 pF VDS=15V, VGS=0V, f=1.0MHz 2
Output Capacitance Coss 44 pF 2
Reverse Transfer Capacitance Crss 33 pF 2
Total Gate Charge Qg 3 nC VDS=15V, ID=2A, VGS=10V 2
Gate-Source Charge Qgs 0.5 nC 2
Gate-Drain (Miller) Charge Qgd 0.8 nC 2
Turn-on Delay Time td(on) 4 ns VDS=15V, ID=4A, RGEN=3Ω, VGS=10V 2
Turn-on Rise Time tr 2.1 ns 2
Turn-off Delay Time td(off) 15 ns 2
Turn-off Fall Time tf 3.2 ns 2

CAD (KiCad official)

  • Symbol: Si2316BDS-T1-GE3-HXY
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: si2316bds-t1-ge3-hxy-etched.step / si2316bds-t1-ge3-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si2316bds-t1-ge3-hxy.step / si2316bds-t1-ge3-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 0ba1c03875e2e981, retrieved 2026-11-02, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF