component
SI2312HE3-TP
Public Made by Adomby adom
MCC Micro Commercial Components MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 23d ago |
| viewers | 23d ago |
| package.json | 23d ago |
| page.json | 23d ago |
| README.md | 23d ago |
| si2312he3-tp-etched.glb | 23d ago |
| si2312he3-tp-etched.step | 23d ago |
| si2312he3-tp-hero.glb | 23d ago |
| si2312he3-tp-hero.overlay.json | 23d ago |
| si2312he3-tp.glb | 23d ago |
| si2312he3-tp.kicad_mod | 23d ago |
| si2312he3-tp.kicad_sym | 23d ago |
| si2312he3-tp.lbr | 23d ago |
| si2312he3-tp.step | 23d ago |
SI2312HE3-TP
MCC Micro Commercial Components · MOSFETs · SOT-23
SI2312HE3-TP from MCC Micro Commercial Components, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GATE | input | MOSFET gate terminal; gate-source voltage is rated at ±8 V (VGS). |
| 2 | SOURCE | passive | MOSFET source terminal, the reference for the 20 V drain-source rating (VDS) and the gate-source rating (VGS). |
| 3 | DRAIN | passive | MOSFET drain terminal; drain-source voltage is rated at 20 V (VDS) and pulsed drain current at 20 A (repetitive, pulse width limited by maximum junction temperature). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MCC Micro Commercial Components |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-Source Voltage | VGS | -8 | 8 | V | 1 | ||
| Drain-Source Voltage | VDS | 20 | V | 1 | |||
| Continuous Drain Current | ID | 5 | A | TA=25°C | 1 | ||
| Continuous Drain Current | ID | 4 | A | TA=70°C | 1 | ||
| Pulsed Drain Current | IDM | 20 | A | (Note 3) | 1 | ||
| Total Power Dissipation | PD | 1.25 | W | TA=25°C (Note 4) | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | °C | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 1 | ||
| Thermal Resistance Junction to Ambient | RθJA | 100 | °C/W | Note 2: FR-4 board, 1 in² pad, 2oz Cu, still air, TA=25°C | 1 | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | 20 | V | VGS=0V, ID=250µA | 2 | ||
| Gate-Threshold Voltage | VGS(th) | 0.45 | 1 | V | VDS=VGS, ID=250µA | 2 | |
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±8V, VDS=0V | 2 | |
| Drain-Source On-Resistance | RDS(on) | 31.8 | mΩ | VGS=4.5V, ID=5A | 2 | ||
| Drain-Source On-Resistance | RDS(on) | 35.6 | mΩ | VGS=2.5V, ID=4.7A | 2 | ||
| Drain-Source On-Resistance | RDS(on) | 41.4 | mΩ | VGS=1.8V, ID=4.3A | 2 | ||
| Forward Transconductance | gFS | 30 | S | VDS=10V, ID=4A | 2 |
CAD (KiCad official)
- Symbol:
SI2312HE3-TP - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
si2312he3-tp-etched.step/si2312he3-tp-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si2312he3-tp.step/si2312he3-tp.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MCC Micro Commercial Components datasheet (6 pp, sha256
1488534c420b2572, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).