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SI2312CDS-T1-GE3
Public Made by Adomby adom
Vishay Intertech MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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|---|---|
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| si2312cds-t1-ge3-etched.step | 29d ago |
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SI2312CDS-T1-GE3
Vishay Intertech · MOSFETs · SOT-23
SI2312CDS-T1-GE3 from Vishay Intertech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET; gate-source voltage is rated at VGS = ±8 V (absolute maximum). |
| 2 | S | passive | Source of the N-channel MOSFET; continuous source-drain diode current is rated at 1.75 A at TC = 25 °C. |
| 3 | D | passive | Drain of the N-channel MOSFET; drain-source voltage is rated at 20 V with continuous drain current of 6 A at TC = 25 °C (package limited). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ±8 V | 2 | |
| Gate-Source Threshold Voltage | VGS(th) | 0.45 | 1 | V | VDS = VGS, ID = 250 µA | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 0.0265 | 0.0318 | Ω | VGS = 4.5 V, ID = 5.0 A | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 0.0296 | 0.0356 | Ω | VGS = 2.5 V, ID = 4.7 A | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 0.0345 | 0.0414 | Ω | VGS = 1.8 V, ID = 4.3 A | 2 | |
| Gate Resistance | Rg | 0.5 | 2.4 | 4.8 | Ω | f = 1 MHz | 2 |
| Total Gate Charge | Qg | 12 | 18 | nC | VDS = 10 V, VGS = 5 V, ID = 5.0 A | 2 | |
| Total Gate Charge | Qg | 8.8 | 14 | nC | VDS = 10 V, VGS = 4.5 V, ID = 5.0 A | 2 | |
| Turn-On Delay Time | td(on) | 8 | 16 | ns | VDD = 10 V, RL = 2.2 Ω, ID ≅ 4 A, VGEN = 4.5 V, Rg = 1 Ω | 2 | |
| Rise Time | tr | 17 | 26 | ns | VDD = 10 V, RL = 2.2 Ω, ID ≅ 4 A, VGEN = 4.5 V, Rg = 1 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 31 | 47 | ns | VDD = 10 V, RL = 2.2 Ω, ID ≅ 4 A, VGEN = 4.5 V, Rg = 1 Ω | 2 | |
| Fall Time | tf | 8 | 16 | ns | VDD = 10 V, RL = 2.2 Ω, ID ≅ 4 A, VGEN = 4.5 V, Rg = 1 Ω | 2 | |
| Turn-On Delay Time | td(on) | 5 | 10 | ns | VDD = 10 V, RL = 2.2 Ω, ID ≅ 4 A, VGEN = 5 V, Rg = 1 Ω | 2 | |
| Rise Time | tr | 13 | 20 | ns | VDD = 10 V, RL = 2.2 Ω, ID ≅ 4 A, VGEN = 5 V, Rg = 1 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 21 | 32 | ns | VDD = 10 V, RL = 2.2 Ω, ID ≅ 4 A, VGEN = 5 V, Rg = 1 Ω | 2 | |
| Fall Time | tf | 6 | 12 | ns | VDD = 10 V, RL = 2.2 Ω, ID ≅ 4 A, VGEN = 5 V, Rg = 1 Ω | 2 | |
| Body Diode Voltage | VSD | 0.75 | 1.2 | V | IS = 4 A, VGS = 0 V | 2 | |
| Body Diode Reverse Recovery Time | trr | 12 | 20 | ns | IF = 4 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 5 | 10 | nC | IF = 4 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 | |
| Drain-Source Voltage | VDS | 20 | V | TA = 25 °C | 1 | ||
| Gate-Source Voltage | VGS | -8 | 8 | V | TA = 25 °C | 1 | |
| Continuous Drain Current | ID | 6 | A | TJ = 150 °C, TC = 25 °C (package limited) | 1 | ||
| Continuous Drain Current | ID | 5.1 | A | TJ = 150 °C, TC = 70 °C | 1 | ||
| Continuous Drain Current | ID | 5 | A | TJ = 150 °C, TA = 25 °C | 1 | ||
| Continuous Drain Current | ID | 4 | A | TJ = 150 °C, TA = 70 °C | 1 | ||
| Pulsed Drain Current | IDM | 20 | A | 1 | |||
| Continuous Source-Drain Diode Current | IS | 1.75 | A | TC = 25 °C | 1 | ||
| Continuous Source-Drain Diode Current | IS | 1.04 | A | TA = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 2.1 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 1.3 | W | TC = 70 °C | 1 | ||
| Maximum Power Dissipation | PD | 1.25 | W | TA = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 0.8 | W | TA = 70 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient | RthJA | 80 | 100 | °C/W | t ≤ 5 s | 1 | |
| Maximum Junction-to-Ambient | RthJA | 125 | °C/W | Steady state (note d) | 1 | ||
| Maximum Junction-to-Foot (Drain) | RthJF | 40 | 60 | °C/W | Steady state | 1 |
CAD (KiCad official)
- Symbol:
SI2312CDS-T1-GE3 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
si2312cds-t1-ge3-etched.step/si2312cds-t1-ge3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si2312cds-t1-ge3.step/si2312cds-t1-ge3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (7 pp, sha256
57de5e1bf45de846, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).