# SI2312A

**HXY MOSFET** · MOSFETs · SOT-23

SI2312A from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET, rated for a gate-source voltage VGS of ±12 V with a gate threshold of 0.5 to 1.0 V. |
| 2 | D | passive | Drain of the N-channel MOSFET, in a device rated for a drain-source voltage VDS of 20 V and a continuous drain current ID of 6 A at TA=25℃. |
| 3 | S | passive | Source of the N-channel MOSFET, the reference terminal for the 20 V drain-source rating and the ±12 V gate-source rating. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 20 | 22.5 |  | V | VGS=0V ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=20V,VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±12V,VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 0.5 | 0.65 | 1 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) |  | 22 | 27 | mΩ | VGS=4.5V, ID=4.0 A | 2 |
| Drain-Source On-State Resistance | RDS(ON) |  | 28 | 40 | mΩ | VGS=2.5V, ID=4.5A | 2 |
| Total Gate Charge | Qg |  | 10 | 15 | nC | VDS=10V,ID=3A,VGS=4.5V | 2 |
| Diode Forward Voltage | VSD |  |  | 1.2 | V | VGS=0V,IS=1A | 2 |
| Diode Forward Current | IS |  |  | 4.5 | A |  | 2 |
| Drain-Source Voltage | VDS |  |  | 20 | V |  | 1 |
| Gate-Source Voltage | VGS | -12 |  | 12 | V |  | 1 |
| Continuous Drain Current | ID |  |  | 6 | A | TA =25℃ | 1 |
| Continuous Drain Current | ID |  |  | 3.6 | A | TA =70℃ | 1 |
| Drain Current-Pulsed | IDM |  |  | 15 | A |  | 1 |
| Maximum Power Dissipation | PD |  |  | 1.25 | W |  | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance, Junction-to-Ambient | θJA |  |  | 100 | ℃/W | Note 2: surface mounted on FR4 board, t ≤ 10 sec | 1 |

## CAD (KiCad official)

- Symbol: `SI2312A`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `si2312a-etched.step` / `si2312a-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `si2312a.step` / `si2312a.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8758135177686335488) (7 pp, sha256 `08bf3236b0c431e8`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/si2312a-datasheet.pdf)