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SI2311DS-T1-GE3-VB
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VBsemi Elec MOSFETs, SOT-23(TO-236). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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Symbol & Footprint
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README
markdownSI2311DS-T1-GE3-VB
VBsemi Elec · MOSFETs · SOT-23(TO-236)
SI2311DS-T1-GE3-VB from VBsemi Elec, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limit is ±12 V, with threshold VGS(th) of -0.5 V to -1.5 V at ID = -250 µA. |
| 2 | S | passive | Source of the P-channel MOSFET; continuous source-drain diode current is -2.1 A at TC = 25 °C. |
| 3 | D | passive | Drain; drain-source voltage is rated at -20 V and pulsed drain current at -10 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SOT-23(TO-236) |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -20 | V | 1 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| Continuous Drain Current | ID | -4 | A | TC = 25 °C | 1 | ||
| Continuous Drain Current | ID | -3.2 | A | TC = 70 °C | 1 | ||
| Continuous Drain Current | ID | -3.5 | A | TA = 25 °C, note c | 1 | ||
| Continuous Drain Current | ID | -2.5 | A | TA = 70 °C, note c | 1 | ||
| Pulsed Drain Current | IDM | -10 | A | 1 | |||
| Continuous Source-Drain Diode Current | IS | -2.1 | A | TC = 25 °C | 1 | ||
| Continuous Source-Drain Diode Current | IS | -1 | A | TA = 25 °C, note c | 1 | ||
| Maximum Power Dissipation | PD | 2.5 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 1.6 | W | TC = 70 °C | 1 | ||
| Maximum Power Dissipation | PD | 1.25 | W | TA = 25 °C, note c | 1 | ||
| Maximum Power Dissipation | PD | 0.8 | W | TA = 70 °C, note c | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient | RthJA | 75 | 100 | °C/W | t = 5 s, notes b and d | 1 | |
| Maximum Junction-to-Ambient (steady state) | RthJA | 166 | °C/W | Steady state, note d | 1 | ||
| Maximum Junction-to-Foot (Drain), steady state | RthJF | 40 | 50 | °C/W | Steady state | 1 | |
| Drain-Source Breakdown Voltage | VDS | -20 | V | VDS = 0 V, ID = -250 µA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | -1.5 | -0.5 | V | VDS = VGS, ID = -250 µA | 2 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ±12 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS = -20 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -10 | µA | VDS = -20 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| On-State Drain Current | ID(on) | -10 | A | VDS -5 V, VGS = -4.5 V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.06 | Ω | VGS = -10 V, ID = -3 A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.065 | Ω | VGS = -4.5 V, ID = -2.5 A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.08 | Ω | VGS = -2.5 V, ID = -2 A | 2 | ||
| Gate Resistance | Rg | 0.9 | 4.4 | 8.8 | Ω | f = 1 MHz | 2 |
| Body Diode Voltage | VSD | -1.2 | -0.8 | V | IS = -3.1 A | 2 | |
| Turn-On Delay Time | td(on) | 22 | 33 | ns | VDD = -10 V, RL = 2.4, ID = -3.1 A, VGEN = -4.5 V, Rg = 1 | 2 | |
| Rise Time | tr | 20 | 30 | ns | VDD = -10 V, RL = 2.4, ID = -3.1 A, VGEN = -4.5 V, Rg = 1 | 2 | |
| Turn-Off Delay Time | td(off) | 28 | 42 | ns | VDD = -10 V, RL = 2.4, ID = -3.1 A, VGEN = -4.5 V, Rg = 1 | 2 | |
| Fall Time | tf | 9 | 18 | ns | VDD = -10 V, RL = 2.4, ID = -3.1 A, VGEN = -4.5 V, Rg = 1 | 2 | |
| Body Diode Reverse Recovery Time | trr | 23 | 35 | ns | IF = -3.1 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 12 | 20 | nC | IF = -3.1 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 | |
| Drain-Source Voltage Temperature Coefficient | VDS/TJ | 13.4 | mV/°C | ID = -250 µA | 2 | ||
| Total Gate Charge | Qg | 10 | nC | VDS = -10 V, VGS = -4.5 V, ID = -3.1 A | 2 | ||
| Total Gate Charge | Qg | 6.4 | nC | VDS = -10 V, VGS = -2.5 V, ID = -3.1 A | 2 | ||
| Gate-Source Charge | Qgs | 1.7 | nC | 2 | |||
| Gate-Drain Charge | Qgd | 3.4 | nC | 2 | |||
| Input Capacitance | Ciss | 835 | pF | VDS = -10 V, VGS = 0 V, f = 1 MHz | 2 | ||
| Output Capacitance | Coss | 180 | pF | VDS = -10 V, VGS = 0 V, f = 1 MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 155 | pF | VDS = -10 V, VGS = 0 V, f = 1 MHz | 2 | ||
| Forward Transconductance | gfs | 15 | S | VDS = -5 V, ID = -3 A | 2 | ||
| Reverse Recovery Fall Time | ta | 15 | ns | 2 | |||
| Reverse Recovery Rise Time | tb | 8 | ns | 2 |
CAD (KiCad official)
- Symbol:
SI2311DS-T1-GE3-VB - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23(TO-236) (KiCad packages3D, STEP)
- 3D model files:
si2311ds-t1-ge3-vb-etched.step/si2311ds-t1-ge3-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si2311ds-t1-ge3-vb.step/si2311ds-t1-ge3-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (9 pp, sha256
bc22806e2f89106e, retrieved 2026-10-15, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).