# SI2310B-TP

**MCC Micro Commercial Components** · MOSFETs · SOT-23

SI2310B-TP from MCC Micro Commercial Components, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GATE | input | Gate terminal of the N-channel enhancement-mode MOSFET; the datasheet rates VGS at ±20 V. |
| 2 | SOURCE | passive | Source terminal of the N-channel MOSFET, shown as S in the internal structure diagram; the pin label in the text extraction is corrupted, so the name is inferred from the symbol. |
| 3 | DRAIN | passive | Drain terminal of the N-channel MOSFET, shown as D in the internal structure diagram; rated for VDS of 60 V and drain current ID of 3.0 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | MCC Micro Commercial Components |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 60 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Drain Current | ID |  |  | 3 | A |  | 1 |
| Pulsed Drain Current | IDM |  |  | 10 | A | Pulse width limited by junction temperature (Note 2) | 1 |
| Total Power Dissipation | PD |  |  | 1.2 | W | Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch (Note 1) | 1 |
| Operating Junction Temperature Range | TJ | -55 |  | 150 | °C |  | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | °C |  | 1 |
| Thermal Resistance Junction to Ambient | RθJA |  |  | 105 | °C/W | Junction to ambient, device mounted on FR-4 PCB (Note 1) | 1 |
| Drain-Source Breakdown Voltage | V(BR)DSS | 60 |  |  | V | VGS=0V, ID=250µA | 2 |
| Gate-Source Leakage Current | IGSS | -100 |  | 100 | nA | VDS=0V, VGS=±20V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | µA | VDS=60V, VGS=0V | 2 |
| Gate-Threshold Voltage | VGS(th) | 0.5 |  | 1.3 | V | VDS=VGS, ID=250µA | 2 |
| Drain-Source On-Resistance | RDS(on) |  |  | 105 | mΩ | VGS=10V, ID=3A | 2 |
| Drain-Source On-Resistance | RDS(on) |  |  | 125 | mΩ | VGS=4.5V, ID=3A | 2 |
| Diode Forward Voltage | VSD |  |  | 1.2 | V | VGS=0V, IS=3A | 2 |

## CAD (KiCad official)

- Symbol: `SI2310B-TP`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `si2310b-tp-etched.step` / `si2310b-tp-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `si2310b-tp.step` / `si2310b-tp.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [MCC Micro Commercial Components datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588914572921622528) (4 pp, sha256 `357a777fe793b381`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/si2310b-tp-datasheet.pdf)