component
SI2310-TP
Public Made by Adomby adom
MCC Micro Commercial Components MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
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| page.json | 17d ago |
| README.md | 17d ago |
| si2310-tp-etched.glb | 24d ago |
| si2310-tp-etched.step | 24d ago |
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SI2310-TP
MCC Micro Commercial Components · MOSFETs · SOT-23
SI2310-TP from MCC Micro Commercial Components, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GATE | input | Gate of the N-channel enhancement-mode MOSFET; the datasheet specifies a gate-source voltage rating of ±20 V. |
| 2 | SOURCE | passive | Source of the N-channel MOSFET; the datasheet gives a diode forward voltage of 1.2 V max at IS = 3 A (VGS = 0 V) for the source-drain body diode. |
| 3 | DRAIN | passive | Drain of the N-channel MOSFET; the datasheet gives a drain-source voltage rating of 60 V and a continuous drain current of 3.0 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MCC Micro Commercial Components |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | 60 | V | VGS=0V, ID=250µA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS=60V, VGS=0V | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 2 | |
| Gate-Threshold Voltage | VGS(th) | 0.5 | 2 | V | VDS=VGS, ID=250µA | 2 | |
| Drain-Source On-Resistance (VGS=10V) | RDS(on) | 105 | mΩ | VGS=10V, ID=3A | 2 | ||
| Drain-Source On-Resistance (VGS=4.5V) | RDS(on) | 125 | mΩ | VGS=4.5V, ID=3A | 2 | ||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=3A | 2 | ||
| Forward Transconductance | gFS | 1.4 | S | VDS=15V, ID=2A | 2 | ||
| Drain-Source Voltage | VDS | 60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current | ID | 3 | A | 1 | |||
| Pulsed Drain Current | IDM | 10 | A | Repetitive rating: pulse width limited by junction temperature (Note 1) | 1 | ||
| Total Power Dissipation | PD | 1.2 | W | 1 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | °C | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 1 | ||
| Thermal Resistance Junction to Ambient | RθJA | 105 | °C/W | Junction to ambient, surface mounted on FR4 board, t≤10s (Note 2) | 1 |
CAD (KiCad official)
- Symbol:
SI2310-TP - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
si2310-tp-etched.step/si2310-tp-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si2310-tp.step/si2310-tp.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MCC Micro Commercial Components datasheet (4 pp, sha256
85dd5b75ac395412, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).