# SI2310-HXY

**HXY MOSFET** · MOSFETs · SOT-23

SI2310-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET; gate-source voltage is rated ±20 V. |
| 2 | D | passive | Drain of the N-channel MOSFET; drain-source voltage is rated 60 V and continuous drain current 3 A. |
| 3 | S | passive | Source of the N-channel MOSFET; body diode forward current is rated 3 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 60 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Drain Current-Continuous | ID |  |  | 3 | A |  | 1 |
| Drain Current-Pulsed | IDM |  |  | 10 | A | Note 1: repetitive rating, pulse width limited by maximum junction temperature | 1 |
| Maximum Power Dissipation | PD |  |  | 1.7 | W |  | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance, Junction-to-Ambient | RθJA |  |  | 73.5 | ℃/W | Surface Mounted on FR4 Board, t ≤ 10 sec (Note 2) | 1 |
| Gate-Body Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V,VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 0.8 | 1.3 | 2 | V | VDS=VGS,ID=250μA | 2 |
| Forward Transconductance | gFS | 3 |  |  | S | VDS=15V,ID=2A | 2 |
| Diode Forward Voltage | VSD |  |  | 1.2 | V | VGS=0V,IS=3A | 2 |
| Diode Forward Current | IS |  |  | 3 | A |  | 2 |

## CAD (KiCad official)

- Symbol: `SI2310-HXY`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `si2310-hxy-etched.step` / `si2310-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `si2310-hxy.step` / `si2310-hxy.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8758130866805714944) (7 pp, sha256 `c2c5e6dcd32c6f0a`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/si2310-hxy-datasheet.pdf)