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SI2309CDS-T1-E3

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Vishay Intertech MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SI2309CDS-T1-E3

Vishay Intertech · MOSFETs · SOT-23

SI2309CDS-T1-E3 from Vishay Intertech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the P-channel MOSFET; gate-source voltage is limited to ±20 V.
2 S passive Source terminal of the P-channel MOSFET, the reference for VGS and the source of the body diode (continuous source-drain diode current limited to -1.4 A at TC = 25 °C).
3 D passive Drain terminal of the P-channel MOSFET; drain-source voltage is rated -60 V with continuous drain current of -1.6 A at TC = 25 °C.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -60 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID -1.6 A TC = 25 °C 1
Continuous Drain Current ID -1.3 A TC = 70 °C 1
Continuous Drain Current ID -1.2 A TA = 25 °C 1
Continuous Drain Current ID -1 A TA = 70 °C 1
Pulsed Drain Current IDM -8 A 10 µs pulse width 1
Single Pulse Avalanche Current IAS -5 A L = 0.1 mH 1
Continuous Source-Drain Diode Current IS -1.4 A TC = 25 °C 1
Continuous Source-Drain Diode Current IS -0.9 A TA = 25 °C 1
Maximum Power Dissipation PD 1.7 W TC = 25 °C 1
Maximum Power Dissipation PD 1.1 W TC = 70 °C 1
Maximum Power Dissipation PD 1 W TA = 25 °C 1
Maximum Power Dissipation PD 0.67 W TA = 70 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Soldering Recommendations (Peak Temperature) 260 °C 1
Maximum Junction-to-Ambient RthJA 92 120 °C/W t ≤ 5 s 1
Maximum Junction-to-Ambient RthJA 166 °C/W Steady state (note c) 1
Maximum Junction-to-Foot (Drain) RthJF 58 73 °C/W Steady state 1
Drain-Source Breakdown Voltage VDS -60 V VGS = 0 V, ID = -250 µA 2
Gate-Source Threshold Voltage VGS(th) -1 -3 V VDS = VGS, ID = -250 µA 2
Gate-Source Leakage IGSS -100 nA VDS = 0 V, VGS = ±20 V 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS = -60 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS -10 µA VDS = -60 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) -6 A VDS ≤ 5 V, VGS = -10 V 2
Drain-Source On-State Resistance RDS(on) 0.285 0.345 Ω VGS = -10 V, ID = -1.25 A 2
Drain-Source On-State Resistance RDS(on) 0.36 0.45 Ω VGS = -4.5 V, ID = -1.0 A 2
Total Gate Charge Qg 2.7 4.1 nC VDS = -30 V, VGS = -4.5 V, ID = -1.25 A 2
Turn-On Delay Time td(on) 40 60 ns VDD = -30 V, RL = 30 Ω, ID ≅ -1 A, VGEN = -4.5 V, Rg = 1 Ω 2
Rise Time tr 35 55 ns VDD = -30 V, RL = 30 Ω, ID ≅ -1 A, VGEN = -4.5 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 15 25 ns VDD = -30 V, RL = 30 Ω, ID ≅ -1 A, VGEN = -4.5 V, Rg = 1 Ω 2
Fall Time tf 10 20 ns VDD = -30 V, RL = 30 Ω, ID ≅ -1 A, VGEN = -4.5 V, Rg = 1 Ω 2
Turn-On Delay Time td(on) 5 10 ns VDD = -30 V, RL = 30 Ω, ID ≅ -1 A, VGEN = -10 V, Rg = 1 Ω 2
Rise Time tr 10 20 ns VDD = -30 V, RL = 30 Ω, ID ≅ -1 A, VGEN = -10 V, Rg = 1 Ω 2
Continuous Source-Drain Diode Current IS -1.4 A TC = 25 °C 2
Pulse Diode Forward Current ISM -8 A 2
Body Diode Voltage VSD -0.8 -1.2 V IS = -0.75 A, VGS = 0 V 2
Body Diode Reverse Recovery Time trr 30 60 ns IF = -1.25 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 33 60 nC IF = -1.25 A, dI/dt = 100 A/µs, TJ = 25 °C 2
VDS Temperature Coefficient ΔVDS/TJ -65 mV/°C ID = -250 µA 2
VGS(th) Temperature Coefficient ΔVGS(th)/TJ 4.5 mV/°C 2
Forward Transconductance gfs 2.8 S VDS = -10 V, ID = -1.0 A 2
Input Capacitance Ciss 210 pF VDS = -30 V, VGS = 0 V, f = 1 MHz 2
Output Capacitance Coss 28 pF VDS = -30 V, VGS = 0 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 20 pF VDS = -30 V, VGS = 0 V, f = 1 MHz 2
Gate-Source Charge Qgs 0.8 nC VDS = -30 V, VGS = -4.5 V, ID = -1.25 A 2
Gate-Drain Charge Qgd 1.2 nC VDS = -30 V, VGS = -4.5 V, ID = -1.25 A 2
Gate Resistance Rg 7 Ω f = 1 MHz 2
Reverse Recovery Fall Time ta 18 ns 2
Reverse Recovery Rise Time tb 12 ns 2

CAD (KiCad official)

  • Symbol: SI2309CDS-T1-E3
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: si2309cds-t1-e3-etched.step / si2309cds-t1-e3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si2309cds-t1-e3.step / si2309cds-t1-e3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (8 pp, sha256 60c5294b112245d3, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF