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Contents

README

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SI2309A

UMW · MOSFETs · SOT-23

SI2309A from UMW, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input GATE terminal of the -60 V P-channel MOSFET; gate-source voltage is rated VGS = ±20 V.
2 S passive SOURCE terminal of the P-channel MOSFET; drain-source voltage is rated VDS = -60 V.
3 D passive DRAIN terminal of the P-channel MOSFET; continuous drain current is rated ID = -1.25 A at TA = 25°C (surface mounted, steady state).

Key specifications

Parameter Value
Manufacturer UMW
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage VDSS -60 V ID=-250µA, VGS=0V 2
Gate-Body leakage current IGSS -100 100 nA VDS=0V, VGS=±20V 2
Gate Threshold Voltage VGS(th) -1 -3 V VDS=VGS, ID=-250μA 2
On state drain current ID(ON) -6 A VGS=-4.5V, VDS=-10A 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS=-48V, VGS=0V 2
Zero Gate Voltage Drain Current IDSS -50 µA VDS=-48V,VGS=0V,TJ=125°C 2
Static Drain-Source On-Resistance RDS(ON) 340 mΩ VGS=-10V, ID=-1.25A 2
Static Drain-Source On-Resistance RDS(ON) 550 mΩ VGS=-4.5V, ID=-1A 2
Maximum Body-Diode Continuous Current IS -1.25 A 2
Diode Forward Voltage VSD -0.82 -1.2 V IS=-1.25A, VGS=0V 2
Total Gate Charge Qg 5.4 12 nC VGS=-10V, VDS=-30V, ID=-1.25A 2
Turn-On Delay Time tD(on) 10.5 20 ns 2
Turn-On Rise Time tr 11.5 20 ns 2
Turn-Off Delay Time tD(off) 15.5 30 ns 2
Turn-Off Fall Time tf 7.5 15 ns 2
Body Diode Reverse Recovery Time trr 30 55 ns IF=-1.25A, dI/dt=100A/μs 2
Forward Transconductance gFS 1.9 S VDS=-4.5V, ID=-1A 2
Input Capacitance Ciss 270 pF VGS=0V, VDS=-25V, f=1MHz 2
Output Capacitance Coss 170 pF VGS=0V, VDS=-25V, f=1MHz 2
Reverse Transfer Capacitance Crss 31 pF VGS=0V, VDS=-25V, f=1MHz 2
Gate Source Charge Qgs 1.15 nC 2
Gate Drain Charge Qgd 0.92 nC 2
Drain-Source Voltage VDS -60 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID -1.25 A TA=25°C 1
Continuous Drain Current ID -0.85 A TA=70°C 1
Pulsed Drain Current IDM -8 A 1
Avalanche Current IAS -5 A L=0.1mH 1
Power Dissipation PD 1.25 W TA=25°C 1
Power Dissipation PD 0.8 W TA=70°C 1
Junction Temperature TJ 150 °C 1
Storage Temperature Range TSTG -55 150 °C 1
Thermal Resistance Junction-to-Ambient RthJA 100 °C/W t ≤ 5 sec, surface mounted on FR4 1
Thermal Resistance Junction-to-Ambient RthJA 166 °C/W Steady State, surface mounted on FR4 1
Thermal Resistance Junction-to-Ambient (per unit base, transient curve note) RthJA 130 °C/W Per Unit Base, note 2 of normalized transient impedance curve 5

CAD (KiCad official)

  • Symbol: SI2309A
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: si2309a-etched.step / si2309a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si2309a.step / si2309a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UMW datasheet (8 pp, sha256 48baeff8d5273885, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF