component
Si2308CDS-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 16d ago |
| viewers | 16d ago |
| package.json | 16d ago |
| page.json | 16d ago |
| README.md | 16d ago |
| si2308cds-hxy-etched.glb | 16d ago |
| si2308cds-hxy-etched.step | 16d ago |
| si2308cds-hxy-hero.glb | 16d ago |
| si2308cds-hxy-hero.overlay.json | 16d ago |
| si2308cds-hxy.glb | 16d ago |
| si2308cds-hxy.kicad_mod | 16d ago |
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| si2308cds-hxy.lbr | 16d ago |
| si2308cds-hxy.step | 16d ago |
Si2308CDS-HXY
HXY MOSFET · MOSFETs · SOT-23
Si2308CDS-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET; gate-source voltage is rated ±20 V and the device is specified for operation with gate voltages as low as 2.5 V. |
| 2 | D | passive | Drain of the N-channel MOSFET; drain-source voltage is rated 60 V with continuous drain current of 3 A. |
| 3 | S | passive | Source of the N-channel MOSFET; the body diode forward current is rated 3 A (IS) and the source is the reference for VGS. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current-Continuous | ID | 3 | A | 1 | |||
| Drain Current-Pulsed | IDM | 10 | A | Note 1: repetitive rating, pulse width limited by maximum junction temperature | 1 | ||
| Maximum Power Dissipation | PD | 1.7 | W | 1 | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 73.5 | ℃/W | Note 2: surface mounted on FR4 board, t ≤ 10 sec | 1 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 0.8 | 1.3 | 2 | V | VDS=VGS, ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 85 | mΩ | @ VGS=10V (headline value from page 1 features) | 1 | ||
| Forward Transconductance | gFS | 3 | S | VDS=15V, ID=2A | 2 | ||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=3A | 2 | ||
| Diode Forward Current | IS | 3 | A | Note 2: surface mounted on FR4 board, t ≤ 10 sec | 2 |
CAD (KiCad official)
- Symbol:
Si2308CDS-HXY - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
si2308cds-hxy-etched.step/si2308cds-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si2308cds-hxy.step/si2308cds-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (7 pp, sha256
abcce2f945d76e1e, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).