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SI2308BDS-T1-GE3-VB

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VBsemi Elec MOSFETs, SOT-23(TO-236). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SI2308BDS-T1-GE3-VB

VBsemi Elec · MOSFETs · SOT-23(TO-236)

SI2308BDS-T1-GE3-VB from VBsemi Elec, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V.
2 S passive Source of the N-channel MOSFET; body diode runs from source to drain.
3 D passive Drain; drain-source voltage rated 60 V, continuous drain current 4.0 A at TC = 25 °C.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SOT-23(TO-236)
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage V(BR)DSS 60 V VDS = 0 V, ID = 250 µA 2
Gate-Source Threshold Voltage VGS(th) 1 3 V VDS = VGS, ID = 250 µA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ±20 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 60 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 10 µA VDS = 60 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) 8 A VDS ≥ 5 V, VGS = 10 V 2
Drain-Source On-State Resistance RDS(on) 0.086 Ω VGS = 4.5 V, ID = 1.7 A 2
Total Gate Charge Qg 6.1 nC VDS = 30 V, VGS = 10 V, ID = 1.9 A 2
Total Gate Charge Qg 3.2 nC VDS = 30 V, VGS = 4.5 V, ID = 1.9 A 2
Gate Resistance Rg 0.6 2.2 5.1 Ω f = 1 MHz 2
Rise Time (VGEN = 10 V) tr 10 15 ns VDD = 30 V, RL = 20 Ω, ID ≅ 1.5 A, VGEN = 10 V, RG = 1 Ω 2
Turn-Off Delay Time (VGEN = 10 V) td(off) 10 15 ns VDD = 30 V, RL = 20 Ω, ID ≅ 1.5 A, VGEN = 10 V, RG = 1 Ω 2
Fall Time (VGEN = 10 V) tf 7 10.5 ns VDD = 30 V, RL = 20 Ω, ID ≅ 1.5 A, VGEN = 10 V, RG = 1 Ω 2
Turn-On Delay Time (VGEN = 4.5 V) td(on) 15 23 ns VDD = 30 V, RL = 20 Ω, ID = 1.5 A, VGEN = 4.5 V, RG = 1 Ω 2
Rise Time (VGEN = 4.5 V) tr 16 24 ns VDD = 30 V, RL = 20 Ω, ID = 1.5 A, VGEN = 4.5 V, RG = 1 Ω 2
Turn-Off Delay Time (VGEN = 4.5 V) td(off) 11 17 ns VDD = 30 V, RL = 20 Ω, ID = 1.5 A, VGEN = 4.5 V, RG = 1 Ω 2
Fall Time (VGEN = 4.5 V) tf 11 17 ns VDD = 30 V, RL = 20 Ω, ID = 1.5 A, VGEN = 4.5 V, RG = 1 Ω 2
Continuous Source-Drain Diode Current IS 2.19 A TC = 25 °C 2
Pulse Diode Forward Current ISM 7 A 2
Body Diode Voltage VSD 0.8 1.2 V IS = 1.5 A 2
Body Diode Reverse Recovery Time trr 15 23 ns IF = 1.5 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 10 15 nC IF = 1.5 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Drain-Source Voltage VDS 60 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 4 A TC = 25 °C (TJ = 150 °C) 1
Continuous Drain Current ID 3.4 A TC = 70 °C (TJ = 150 °C) 1
Continuous Drain Current ID 3.1 A TA = 25 °C 1
Continuous Drain Current ID 2.5 A TA = 70 °C 1
Pulsed Drain Current IDM 12 A 1
Continuous Source-Drain Diode Current IS 1.39 A TC = 25 °C 1
Continuous Source-Drain Diode Current IS 0.91 A TA = 25 °C 1
Avalanche Current IAS 6 A L = 0.1 mH 1
Single-Pulse Avalanche Energy EAS 1.8 mJ 1
Maximum Power Dissipation PD 1.66 W TC = 25 °C 1
Maximum Power Dissipation PD 1.06 W TC = 70 °C 1
Maximum Power Dissipation PD 1.09 W TA = 25 °C 1
Maximum Power Dissipation PD 0.7 W TA = 70 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient RthJA 90 115 °C/W t ≤ 5 s 1
Maximum Junction-to-Ambient RthJA 120 °C/W Steady state (note d) 1
Maximum Junction-to-Foot (Drain) RthJF 60 75 °C/W Steady state 1

CAD (KiCad official)

  • Symbol: SI2308BDS-T1-GE3-VB
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23(TO-236) (KiCad packages3D, STEP)
  • 3D model files: si2308bds-t1-ge3-vb-etched.step / si2308bds-t1-ge3-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si2308bds-t1-ge3-vb.step / si2308bds-t1-ge3-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (9 pp, sha256 674f4bc45bdac3b7, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF