# Si2308BDS-T1-GE3-HXY

**HXY MOSFET** · MOSFETs · SOT-23-3L

Si2308BDS-T1-GE3-HXY from HXY MOSFET, in a SOT-23-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET; the datasheet rates Gate-Source Voltage at ±20V. |
| 2 | D | passive | Drain of the N-channel MOSFET; the datasheet rates Drain-Source Voltage at 60V and Drain Current-Continuous at 4.5A. |
| 3 | S | passive | Source of the N-channel MOSFET, the reference terminal for the gate-source ratings (±20V) and the body diode. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23-3L |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 60 |  |  | V | VGS=0V, ID=250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 73 | 85 | mΩ | VGS=10V, ID=5A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 82 | 93 | mΩ | VGS=4.5V, ID=5A | 2 |
| Gate Threshold Voltage | VGS(th) | 1.2 |  | 2.5 | V | VGS=VDS, ID=250uA | 2 |
| Drain-Source Leakage Current | IDSS |  |  | 1 | uA | VDS=48V, VGS=0V, TJ=25°C | 2 |
| Drain-Source Leakage Current | IDSS |  |  | 5 | uA | VDS=48V, VGS=0V, TJ=55°C | 2 |
| Gate-Source Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Continuous Source Current | IS |  |  | 17 | A | VG=VD=0V, Force Current | 2 |
| Pulsed Source Current | ISM |  |  | 50 | A |  | 2 |
| Diode Forward Voltage | VSD |  |  | 1.2 | V | VGS=0V, IS=1A, TJ=25°C | 2 |
| Drain-Source Voltage | VDS |  |  | 60 | V | TA=25°C unless otherwise noted | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V | TA=25°C unless otherwise noted | 1 |
| Drain Current-Continuous | ID |  |  | 4.5 | A | TA=25°C unless otherwise noted | 1 |
| Drain Current-Pulsed | IDM |  |  | 15 | A | Note 1; TA=25°C unless otherwise noted | 1 |
| Maximum Power Dissipation | PD |  |  | 8 | W | TA=25°C unless otherwise noted | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 |  | 150 | °C | TA=25°C unless otherwise noted | 1 |
| Thermal Resistance, Junction-to-Ambient | RθJA |  |  | 89 | °C/W | Note 2 | 1 |

## CAD (KiCad official)

- Symbol: `Si2308BDS-T1-GE3-HXY`
- Footprint: `Package_TO_SOT_SMD:SOT-23-3`
- 3D model: SOT-23-3L (KiCad packages3D, STEP)
- 3D model files: `si2308bds-t1-ge3-hxy-etched.step` / `si2308bds-t1-ge3-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `si2308bds-t1-ge3-hxy.step` / `si2308bds-t1-ge3-hxy.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8757150272843845632) (6 pp, sha256 `62d81216425b6c13`, retrieved 2026-11-06, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/si2308bds-t1-ge3-hxy-datasheet.pdf)