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Si2308BDS-T1-E3-HXY

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HXY MOSFET MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Si2308BDS-T1-E3-HXY

HXY MOSFET · MOSFETs · SOT-23

Si2308BDS-T1-E3-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MOSFET; gate-source voltage limit is ±20 V, with threshold voltage 0.8 V min to 2.0 V max at ID=250 µA.
2 D passive Drain of the N-channel MOSFET; drain-source voltage rated 60 V, continuous drain current 3 A and pulsed 10 A.
3 S passive Source of the N-channel MOSFET; body-diode continuous forward current is 3 A.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-23
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate Threshold Voltage VGS(th) 0.8 1.3 2 V VDS=VGS,ID=250μA 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Drain-Source On-State Resistance RDS(ON) 72 85 mΩ VGS=10V, ID=3A 2
Drain-Source On-State Resistance RDS(ON) 85 103 mΩ VGS=4.5V, ID=1.5A 2
Forward Transconductance gFS 3 S VDS=15V,ID=2A 2
Diode Forward Voltage VSD 1.2 V VGS=0V,IS=3A 2
Diode Forward Current IS 3 A 2
Drain-Source Voltage VDS 60 V TA=25℃ 1
Gate-Source Voltage VGS -20 20 V TA=25℃ 1
Drain Current-Continuous ID 3 A TA=25℃ 1
Drain Current-Pulsed IDM 10 A TA=25℃, Note 1 1
Maximum Power Dissipation PD 1.7 W TA=25℃ 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Ambient RθJA 73.5 ℃/W Note 2 1
Input Capacitance Ciss 510 PF VDS=30V,VGS=0V,F=1.0MHz 2
Output Capacitance Coss 34 PF VDS=30V,VGS=0V,F=1.0MHz 2
Reverse Transfer Capacitance Crss 26 PF VDS=30V,VGS=0V,F=1.0MHz 2
Turn-on Delay Time td(on) 6 nS VDD=30V,ID=1.5A,VGS=10V,RGEN=1Ω 2
Turn-on Rise Time tr 15 nS VDD=30V,ID=1.5A,VGS=10V,RGEN=1Ω 2
Turn-Off Delay Time td(off) 15 nS VDD=30V,ID=1.5A,VGS=10V,RGEN=1Ω 2
Turn-Off Fall Time tf 10 nS VDD=30V,ID=1.5A,VGS=10V,RGEN=1Ω 2
Total Gate Charge Qg 7.5 nC VDS=30V,ID=3A,VGS=4.5V 2
Gate-Source Charge Qgs 1.4 nC VDS=30V,ID=3A,VGS=4.5V 2
Gate-Drain Charge Qgd 3 nC VDS=30V,ID=3A,VGS=4.5V 2

CAD (KiCad official)

  • Symbol: Si2308BDS-T1-E3-HXY
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: si2308bds-t1-e3-hxy-etched.step / si2308bds-t1-e3-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si2308bds-t1-e3-hxy.step / si2308bds-t1-e3-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (7 pp, sha256 294908455d32d25e, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF